2N7002V

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7002V / 2N7002VA N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free by Design/RoHS Compliant D2 (Pin4) S2 SOT-563F * Pin1 and Pin4 are exchangeable. G1 S1 D2 G2 D1 G2 2N7002V S1 G1 S2 D1 2N7002VA Ordering Information Part Number Top Mark Package Packing Method 2N7002V AB SOT-563F 6L Tape and Reel 2N7002VA AC SOT-563F 6L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS ≤ 1.0 MΩ) VGSS ID TJ, TSTG Gate-Source Voltage Drain Current Junction and Storage Temperature Range © 2007 Fairchild Semiconductor Corporation 2N7002V / 2N7002VA Rev. 1.2 Value Unit 60 V 60 V Continuous ±20 Pulsed ±40 Continuous 280 mA Pulsed 1.5 A -55 to +150 °C V www.fairchildsemi.com 2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Total Device Dissipation 250 mW Derate Above TA = 25°C 2.0 mW/°C Thermal Resistance, Junction-to-Ambient(1) 500 °C/W Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. 60 78 Max. Unit Off Characteristics(2) BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA VDS = 60 V, VGS = 0 V 0.001 1.0 IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V, TJ = 125°C 7 500 IGSS Gate-Body Leakage VGS = ±20 V, VDS = 0 V 0.2 ±100 nA 1.76 2.50 V 1.6 7.5 V μA On Characteristics(2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1.00 VGS = 5 V, ID = 0.05 A RDS(ON) ID(ON) gFS Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A 2.0 VGS = 10 V, ID = 0.5 A, TJ = 125°C On-State Drain Current VGS = 10 V, VDS = 7.5 V Forward Transconductance VDS = 10 V, ID = 0.2 A 2.53 Ω 13.5 1.50 1.43 A 80 356.5 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS= 0 V, f = 1.0 MHz 37.8 50 pF 12.4 25 pF 6.5 7 pF 5.85 20 ns 12.5 20 ns Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30 V, ID = 0.2 A, VGEN = 10 V, RL = 150 Ω, RGEN = 25 Ω Note: 2. Short duration test pulse used to minimize self-heating effect. © 2007 Fairchild Semiconductor Corporation 2N7002V / 2N7002VA Rev. 1.2 www.fairchildsemi.com 2 2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics 3.0 RDS(on), : DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 VGS = 3V 4V 4.5V 5V 6V 2.5 2.0 10V 9V 1.5 8V 7V 2V 0.0 0 1 2 3 4 5 6 7 8 9 1.0 0.0 10 0.2 0.4 VDS. DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), : DRANI-SOURCE ON-RESISTANCE RDS(on) : DRANI-SOURCE ON-RESISTANCE 1.0 3.0 VGS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 2.5 ID = 500 mA 2.0 ID = 50 mA 1.5 1.0 0 50 100 150 2 4 o Vth, Gate-Source Threshold Voltage (V) 1.0 o TJ = -25 C o 0.8 150 C o 25 C o 125 C 0.6 o 75 C 0.4 0.2 0.0 3 4 5 10 2.5 VGS = VDS 2.0 ID = 1 mA ID = 0.25 mA 1.5 1.0 -50 6 0 50 100 150 o VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) Figure 6. Gate Threshold Variation with Temperature Figure 5. Transfer Characteristics © 2007 Fairchild Semiconductor Corporation 2N7002V / 2N7002VA Rev. 1.2 8 Figure 4. On-Resistance Variation with Gate-Source Voltage Figure 3. On-Resistance Variation with Temperature VDS = 10V 6 VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) ID. DRAIN-SOURCE CURRENT(A) 0.8 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 2 0.6 ID. DRAIN-SOURCE CURRENT(A) www.fairchildsemi.com 3 2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics 300 o PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] VGS = 0 V 150 C 100 o 25 C 10 o -55 C 1 0.0 250 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 o Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature © 2007 Fairchild Semiconductor Corporation 2N7002V / 2N7002VA Rev. 1.2 0 Ta[ C], AMBIENT TEMPERATURE VSD, Body Diode Forward Voltage [V] Figure 8. Power Derating www.fairchildsemi.com 4 2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued)    $  %         & % $       /$1'3$77(51 5(&200(1'$7,21 7239,(:    & 6($7,1*3/$1(    &   & 127(681/(6627+(5:,6(63(&,),(' $5()(5(1&(72-('(&02 %$//',0(16,216$5(,10,//,0(7(56 &    & '2(6127&203/