2SA1774

2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com COLLECTOR 3 • • • • • Reduces Board Space High hFE, 210−460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7−inch/3000 Unit Tape and Reel Pb−Free Packages are Available* 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value −60 −50 −6.0 −100 Unit Vdc Vdc Vdc mAdc SC−75 CASE 463−01 STYLE 1 1 2 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 −55 ~ + 150 Unit mW °C °C MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. F9 M G G 1 F9 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 May, 2006 − Rev. 6 Publication Order Number: 2SA1774/D 2SA1774 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB Min −60 −50 −6.0 − − − 120 − − Typ − − − − − − − 140 3.5 Max − − − −0.5 −0.5 −0.5 560 − − Unit Vdc Vdc Vdc nA mA Vdc − MHz pF ORDERING INFORMATION Device 2SA1774 2SA1774G 2SA1774T1 2SA1774T1G Package SC−75 SC−75 (Pb−Free) SC−75 SC−75 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2SA1774 TYPICAL ELECTRICAL CHARACTERISTICS 1000 IC, COLLECTOR CURRENT (mA) TA = 25°C 120 90 60 30 0 DC CURRENT GAIN TA = 75°C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = − 25°C TA = 25°C VCE = 10 V 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain 1 0.5 TA = 25°C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 13 Cib, INPUT CAPACITANCE (pF) 12 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 C ob , CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 10 Figure 4. On Voltage 20 VCB (V) 30 40 Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 2SA1774 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 −D− b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE C A L A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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