2SA2180

2SA2180 Ordering number : EN8526 PNP Epitaxial Planar Silicon Transistor 2SA2180 50V / 5A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --5 A ICP IB --8 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C --1 A 2 W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current ICBO IEBO hFE1 hFE2 DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol fT Cob Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--125mA VCE=--2V, IC=--3.75A VCE=--10V, IC=--300mA Ratings min typ max 200 Unit --10 µA --10 µA 500 50 VCB=--10V, f=1MHz 130 MHz 55 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505FA MS IM TB-00001827 No.8526-1/4 2SA2180 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min --50 V See specified Test Circuit. 100 ns See specified Test Circuit. 40 ns IB1 IB2 OUTPUT INPUT 2.8 VR RB RL + + 16.0 50Ω 18.1 100µF 470µF VBE=5V 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220ML IC -- VCE --3.0 A 0m --12 --40mA A 0m 4 --1 --20mA --2.5 --2.0 --10mA --1.5 --5mA --1.0 --0.5 A --30m A --60mA --1.8 --1.6 mA 0 --2 --40m --180m A --16 0 --1 IC -- VCE --2.0 A --80m Collector Current, IC -- A mA A 00m A --200m --3.5 VCC= --25V IC=20IB1= --20IB2= --5A 14.0 5.6 1.6 1.2 0.75 --4.0 V ns 7.2 3.5 V 75 4.5 3.2 --4.5 V --50 Switching Time Test Circuit 10.0 --5.0 mV --6 PW=20µs D.C.≤1% 2.55 --500 --1.2 IE=--100µA, IC=0A See specified Test Circuit. tf Unit max --250 IC=--100µA, IE=0A IC=--1mA, RBE=∞ Package Dimensions unit : mm 7508-002 Collector Current, IC -- A typ IC=--2.5A, IB=--125mA IC=--2.5A, IB=--125mA ton tstg Storage Time Ratings Conditions --1.4 --16mA --14mA --12mA --10mA --18mA --8mA --1.2 --6mA --1.0 --4mA --0.8 --0.6 --2mA --0.4 --0.2 IB=0mA 0 0 --0.5 --1.0 --1.5 Collector-to-Emitter Voltage, VCE -- V --2.0 IT09974 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, VCE -- V IT09975 No.8526-2/4 2SA2180 IC -- VBE --6 VCE= --2V 5 DC Current Gain, hFE --3 --2 Ta= 75° C 25° C --25 °C --1 --0.2 0 --0.4 --0.6 --0.8 --1.0 2 = E VC V --1 5 V mV 00 --5 V 0m 7 --2 0 --2 DC Current Gain, hFE 3 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 100 7 5 3 2 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 7 5 7 IT09977 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IT09979 VCE(sat) -- IC IC / IB=20 5 3 2 --0.1 7 C 5° =7 a T 5°C 5°C --2 2 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IT09981 VBE(sat) -- IC 3 IC / IB=20 --1.0 7 5 3 2 C 75° Ta= °C C --25 25° --0.1 7 5 3 2 3 3 Collector Current, IC -- A VCE(sat) -- IC 2 2 2 IT09980 IC / IB=50 --0.01 --0.01 7 --1.0 3 --0.01 --0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 5 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 7 --1.0 3 7 3 5 2 VCE= --10V --1.0 5 3 7 --0.1 fT -- IC IT09978 7 2 5 5 10 --0.01 7 f=1MHz 10 --0.1 3 Collector Current, IC -- A Cob -- VCB 1000 2 7 5 3 5 1000 7 2 7 IT09976 Ta=25°C 10 --0.01 100 10 --0.01 --1.2 hFE -- IC 100 --25°C 2 2 Base-to-Emitter Voltage, VBE -- V 1000 25°C Ta=75°C 3 3 Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A --4 3 VCE= --2V 7 --5 0 hFE -- IC 1000 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 IT09982 2 --1.0 Ta= --25°C 7 25°C 5 75°C 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 IT09983 No.8526-3/4 2SA2180 Forward Bias A S O 2 10 0m s 10 --1.0 7 5 DC op era 3 2 n tio Collector Current, IC -- A s 0µ 50 1 m s ms IC= --5A 3 2 Collector Dissipation, PC -- W ICP= --8A --10 7 5 --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.1 2 3 2.0 1.5 No he at sin k 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT09984 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT09985 PC -- Tc 25 Collector Dissipation, PC -- W PC -- Ta 2.5 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09986 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8526-4/4