2SC5227A-4-TB-E

Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • • • Low-noise : NF=1.0dB typ (f=1GHz) High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 2 V 70 mA 200 mW Junction Temperature PC Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7013A-009 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.1 2SC5227A-4-TB-E 2SC5227A-5-TB-E Packing Type: TB Marking 1.5 3 1 : Base 2 : Emitter 3 : Collector CP 0.3 R A N K TB 0.4 1.1 2 0.05 0.95 LN LOT No. 1 LOT No. 0.5 2.5 0.5 2.9 Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71812 TKIM/51408AB TIIM TC-00001342 No. A1063-1/8 2SC5227A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=20mA VCE=5V, IC=20mA Output Capacitance Cob Reverse Transfer Capacitance Cre Emitter Cutoff Current DC Current Gain Forward Transfer Gain Noise Figure Ratings Conditions min typ Unit max 60* 1.0 μA 10 μA 270* 5 7 GHz 0.75 VCB=10V, f=1MHz 1.2 0.5 pF pF 2 ⏐S21e⏐ 1 VCE=5V, IC=20mA, f=1GHz 12 dB 2 ⏐S21e⏐ 2 VCE=2V, IC=3mA, f=1GHz 8 dB NF VCE=5V, IC=7mA, f=1GHz 1.0 9 1.8 dB * : The 2SC5227A is classified by 20mA hFE as follows : Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 Ordering Information Package Shipping 2SC5227A-4-TB-E Device CP 3,000pcs./reel 2SC5227A-5-TB-E CP 3,000pcs./reel hFE -- IC 3 7 5 3 2 10 3 5 7 1.0 2 3 5 7 10 2 3 5 5 3 2 1.0 Reverse Transfer Capacitance, Cre -- pF 2 1.0 7 5 3 2 0.1 7 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 1.0 2 3 5 3 ITR08204 7 2 10 3 5 7 100 2 ITR08203 Cre -- VCB 3 f=1MHz 7 0.1 7 Collector Current, IC -- mA Cob -- VCB 3 Output Capacitance, Cre -- pF 7 5 7 100 2 ITR08202 Collector Current, IC -- mA 5 10 7 7 5 fT -- IC VCE=5V Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 100 Pb Free 2 VCE=5V 2 memo f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 ITR07966 No. A1063-2/8 2SC5227A ⏐S21e⏐2 -- IC 14 NF -- IC 12 VCE=5V f=1GHz 12 Noise Figure, NF -- dB 10 10 V CE = 5V V CE =2 V Forward Transfer Gain, ⏐S21e⏐2 -- dB f=1GHz 8 6 4 3 5 7 2 1.0 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 ITR08206 PC -- Ta 240 Collector Dissipation, PC -- mW 6 4 2 2 0 8 0 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR08207 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08208 No. A1063-3/8 2SC5227A f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 0.1GH z j25 j100 j150 2.0Hz 10 50 100 150 250 VCE=5V IC=20mA 30° VCE=5V IC=7mA 2.0GHz VCE=2V 2.0GHz 0.1GHz IC=3mA 8 2.0GHz 4 2.0GHz 2.0GHz ±180° 12 16 20 0 VCE=5V VCE=5V IC=20mA IC=7mA Hz 0.1GHz 1G 0. --j10 --j250 --j200 --j150 0. 1G H z VCE=2V IC=3mA --30° --150° --j100 --j25 --60° --120° --j50 --90° ITR08209 f=100MHz, 200MHz to 2000MHz(200MHz Step) 2.0GHz 90° 120° f=100MHz, 200MHz to 2000MHz(200MHz Step) VCE=5V IC=7mA j50 2.0GHz 60° VCE=5V IC=20mA ITR08210 2.0GHz j25 j100 j150 150° 30° 0.1GHz VCE=2V 0.1GHz IC=3mA 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 ±180° j200 j250 j10 100 0 10 25 50 2.0GHz --j10 --30° --150° --j25 150 250 VCE=5V IC=20mA 0.1GHz 0.1 G 0.1 Hz GH z 0 60° 120° z 150° 0.1GH j200 j250 25 j10 90° 2.0GHz --j250 2.0GHz --j200 VCE=5V V =2V CE IC=7mA I =3mA --j150 C --j100 --60° --120° --90° ITR08211 --j50 ITR08212 No. A1063-4/8 2SC5227A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.722 0.587 0.426 0.369 0.344 0.334 0.326 0.324 0.328 0.335 0.346 ∠S11 -41.6 -73.2 -113.0 -136.6 -152.9 -165.7 -177.9 172.3 163.4 154.5 147.5 ⏐S21⏐ 17.352 13.419 8.371 5.914 4.593 3.750 3.178 2.784 2.476 2.246 3.073 ∠S21 148.7 127.6 105.1 92.7 83.9 76.7 70.3 64.9 59.5 54.6 50.0 ⏐S12⏐ 0.029 0.046 0.067 0.084 0.102 0.121 0.141 0.162 0.183 0.204 0.226 ∠S12 70.9 60.8 56.9 58.4 60.3 61.5 62.0 61.8 61.2 60.5 59.6 ⏐S22⏐ 0.883 0.710 0.507 0.423 0.382 0.360 0.350 0.341 0.334 0.328 0.328 ∠S22 -21.3 -33.1 -40.7 -42.5 -43.9 -46.3 -49.1 -52.2 -56.4 -60.8 -65.4 ∠S11 -66.8 -104.1 -142.2 -159.8 -171.7 178.7 169.4 161.1 153.4 145.6 140.8 ⏐S21⏐ 28.090 17.995 9.903 6.777 5.181 4.209 3.554 3.085 2.749 2.479 2.295 ∠S21 133.6 112.9 95.9 86.7 79.9 73.9 68.5 63.6 59.1 54.6 50.6 ⏐S12⏐ 0.022 0.035 0.057 0.081 0.104 0.129 0.153 0.177 0.202 0.224 0.248 ∠S12 67.7 65.3 68.3 69.9 70.2 69.1 67.9 66.2 64.3 62.5 60.4 ⏐S22⏐ 0.726 0.506 0.350 0.299 0.278 0.269 0.264 0.258 0.253 0.249 0.248 ∠S22 -32.7 -41.6 -42.4 -41.8 -43.2 -45.9 -49.6 -53.3 -58.3 -63.4 -68.7 ∠S11 -30.5 -57.4 -97.1 -123.2 -141.6 -156.4 -169.4 179.8 170.1 160.4 152.5 ⏐S21⏐ 9.283 8.036 5.756 4.302 3.414 2.834 2.429 2.143 1.919 1.739 1.621 ∠S21 157.3 138.7 113.9 98.1 87.0 78.0 70.3 63.6 57.4 51.7 46.4 ⏐S12⏐ 0.039 0.068 0.099 0.114 0.125 0.137 0.149 0.163 0.179 0.196 0.215 ∠S12 73.6 61.4 48.4 44.4 43.9 45.4 47.5 49.2 50.8 52.3 53.3 ⏐S22⏐ 0.944 0.834 0.641 0.525 0.465 0.429 0.408 0.395 0.385 0.381 0.379 ∠S22 -15.6 -27.5 -40.5 -46.5 -50.2 -53.7 -57.3 -60.9 -65.4 -70.1 -75.2 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.477 0.358 0.288 0.273 0.270 0.271 0.273 0.275 0.284 0.294 0.302 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.858 0.769 0.607 0.528 0.486 0.460 0.453 0.440 0.441 0.447 0.454 No. A1063-5/8 2SC5227A Embossed Taping Specification 2SC5227A-4-TB-E, 2SC5227A-5-TB-E No. A1063-6/8 2SC5227A Outline Drawing 2SC5227A-4-TB-E, 2SC5227A-5-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No. A1063-7/8 2SC5227A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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