2SK3816-DL-1E

Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS(on)1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation 60 PW≤10μs, duty cycle≤1% PD V ±20 V 40 A 160 A 1.65 W 50 W Tc=25°C Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001 2SK3816-1E 2SK3816-DL-1E 1.4 3.0 3.0 1.75 8.0 1.3 0.9 1.2 1.75 5.3 4 0.9 9.2 7.9 1.2 1.3 4.5 10.0 7.9 8.0 9.2 13.4 4.5 10.0 5.3 0.254 1 0.8 13.08 1.27 1.27 0.8 0.5 2.54 1 2 3 TO-262-3L Ordering & Package Information Shipping TO-262-3L (TO-262) 50pcs./tube TO-263-2L (SC-83, TO-263) 800pcs./reel 2SK3816-1E 2SK3816-DL-1E TO-263-2L Marking Package 1 : Gate 2 : Drain 3 : Source 4 : Drain 0 to 0.25 2.54 Device 0.5 2.54 2.4 1 : Gate 2 : Drain 3 : Source 2.4 2.54 2 3 1.35 1.47 Electrical Connection memo 2, 4 K3816 Pb Free LOT No. 1 Packing Type : DL 3 DL Semiconductor Components Industries, LLC, 2013 June, 2013 61913 TKIM TC-00002888/D2404QA TSIM TB-00000610 No.8054-1/7 2SK3816 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 60 mJ 40 A Avalanche Current *2 °C Note : *1 VDD=20V, L=50μH, IAV=40A (Fig.1) *2 L≤50μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=20A 16 μA 2.6 27 V S 26 mΩ mΩ 1780 pF 266 pF Crss 197 pF td(on) tr 16.5 ns 160 ns 160 ns VDS=20V, f=1MHz Fall Time Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD See Fig.2 VDS=30V, VGS=10V, ID=40A 160 ns 40 nC 6.5 nC 11.5 IS=40A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit nC 1.05 1.5 V Fig.2 Switching Time Test Circuit VDD=30V L VIN 10V 0V DUT ID=20A RL=1.5Ω VIN D 2SK3816 50Ω ±10 40 td(off) tf S μA 20 Turn-ON Delay Time G V 1 28 Reverse Transfer Capacitance 10V 0V 60 ID=20A, VGS=4V Coss ≥50Ω RG Unit max ID=20A, VGS=10V Output Capacitance D typ RDS(on)2 Ciss Turn-OFF Delay Time min RDS(on)1 Input Capacitance Rise Time Ratings Conditions VDD VOUT PW=10μs D.C.≤1% G 2SK3816 P.G 50Ω S No.8054-2/7 2SK3816 4V Drain Current, ID -- A 35 35 30 25 20 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain to Source Voltage, VDS -- V 0 2.0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 60 50 40 Tc=75°C 25°C --25°C 20 10 3 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V 10 Forward Current, IF -- A 25 °C 10 5°C --2 = °C Tc 75 7 5 3 2 1.0 7 5 3 0.1 3.5 4.0 4.5 IT07813 4V S= VG 0A, 2 I D= 30 , 20A I D= 20 =10V VGS 10 --25 0 25 50 75 100 125 150 IT07815 IF -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 0 7 3 1.2 1.5 IT07817 f=1MHz Ciss, Coss, Crss -- pF 3 7 5 tr 3 td(on) 2 0.9 Ciss, Coss, Crss -- VDS 5 tf 100 0.6 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V td(off) 2 0.3 IT07816 SW Time -- ID 5 Ciss 2 1000 7 5 Coss Crss 3 2 10 7 5 0.1 40 100 7 5 3 2 3 2 3.0 Case Temperature, Tc -- °C VDS=10V 5 2.5 50 IT07814 | yfs | -- ID 7 2.0 RDS(on) -- Tc 0 --50 0 2 1.5 60 ID=20A 30 1.0 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 70 0.5 IT07812 Tc=7 5°C 25°C --25°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 15 0 0 Forward Transfer Admittance, | yfs | -- S 20 5 5 Switching Time, SW Time -- ns 25 10 VGS=3V 10 30 25 °C Tc =7 5°C --25 °C 6V 40 8V Drain Current, ID -- A 40 VDS=10V Tc= --25° C 10 V Tc=25°C 45 75° C ID -- VGS 50 25° C ID -- VDS 50 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT07818 0 5 10 15 20 Drain to Source Voltage, VDS -- V 25 30 IT07819 No.8054-3/7 2SK3816 5 3 2 VDS=30V ID=40A 9 8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V ASO VGS -- Qg 10 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 Total Gate Charge, Qg -- nC 40 10 7 5 3 2 Operation in 1.0 this area is 7 limited by RDS(on). 5 3 2 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 2 3 5 7 1.0 2 3 0.1 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 5 7 10 2 Drain to Source Voltage, VDS -- V 3 5 7 100 IT17035 PD -- Tc 60 1.65 10μ s 100 μs 1m 10m s 100 s ms DC ope rati on ID=40A IT07820 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 35 IDP=160A(PW≤10μs) 100 7 5 3 2 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT07811 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT07822 No.8054-4/7 2SK3816 Outline Drawing 2SK3816-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No.8054-5/7 2SK3816 Outline Drawing 2SK3816-1E Mass (g) Unit 1.6 mm * For reference No.8054-6/7 2SK3816 Note on usage : Since the 2SK3816 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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