2SK3824

2SK3824 Ordering number : ENN8230 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 60 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 240 A 1.75 W Allowable Power Dissipation PD 60 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 125 mJ Avalanche Current *2 IAV 60 A Tc=25°C Note : *1 VDD=20V, L=50µH, IAV=60A *2 L≤50µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=30A RDS(on)1 RDS(on)2 ID=30A, VGS=10V ID=30A, VGS=4V Ratings min typ Unit max 60 V ±10 µA µA 2.6 V 11.5 15 mΩ 16 22 mΩ 1 1.2 24 Marking : K3824 40 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001200 No.8230-1/4 2SK3824 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 3500 Output Capacitance 500 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 350 pF Turn-ON Delay Time td(on) See specified Test Circuit. 26 ns Rise Time tr td(off) See specified Test Circuit. 230 ns See specified Test Circuit. 255 ns tf See specified Test Circuit. 230 ns nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=60A 67 Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=60A 10.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=60A 10 nC Diode Forward Voltage VSD IS=60A, VGS=0 1.07 1.5 V Package Dimensions unit : mm 2052C 10.2 3.6 4.5 1.3 18.0 15.1 2.7 6.3 5.1 14.0 5.6 1.2 0.8 0.4 2.7 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : TO-220 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN 10V 0V L ID=30A RL=1.0Ω VIN D ≥50Ω VOUT PW=10µs D.C.≤1% 2SK3824 10V 0V G 50Ω VDD 2SK3824 P.G 50Ω S No.8230-2/4 2SK3824 VDS=10V 8V Tc=25°C 4V 40 40 20 20 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 25 20 Tc=75°C 15 25°C --25°C 5 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 7 yfs -- ID 25 °C 5°C --2 = Tc °C 75 10 7 5 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 7 5 4V S= , VG 30A 20 I D= SW Time -- ID I D= 10 5 0 --25 25 50 75 100 125 VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 0.6 0.9 1.2 IT08851 Ciss, Coss, Crss -- VDS f=1MHz 7 5 Ciss, Coss, Crss -- pF 2 tf 100 7 tr 5 td(on) 3 2 1.5 Diode Forward Voltage, VSD -- V 10000 3 150 IT08849 IF -- VSD Ciss td(off) 10 0.1 V 10 S= , VG 30A 15 5 7 100 IT08850 VDD=30V VGS=10V 6 IT08847 25 100 7 5 3 2 5 2 5 Case Temperature, Tc -- °C VDS=10V 3 4 30 IT08848 Drain Current, ID -- A Switching Time, SW Time -- ns 10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 100 3 RDS(on) -- Tc 0 --50 0 2 2 35 ID=30A 10 1 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 35 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 IT08846 Tc=75 °C 25°C --25°C 0 1000 C 60 Tc =7 5° C 25 --25°C °C 60 80 75° Drain Current, ID -- A 6V V 10 80 Tc= --25 °C 100 100 Drain Current, ID -- A ID -- VGS 120 25° C ID -- VDS 120 3 2 1000 7 Coss 5 Crss 3 2 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT08852 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT08853 No.8230-3/4 2SK3824 VGS -- Qg 10 8 7 6 5 4 3 2 100 7 5 ID=60A 3 2 10 7 5 Operation in this area is limited by RDS(on). 3 2 1.0 7 5 3 2 1 0 10 20 30 40 50 Total Gate Charge, Qg -- nC 60 70 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 3 5 7 10 2 3 5 7 100 IT08855 PD -- Tc 70 1.75 2 Drain-to-Source Voltage, VDS -- V IT08854 PD -- Ta 2.0