74HC138

74HC138 1−of−8 Decoder/ Demultiplexer High−Performance Silicon−Gate CMOS The 74HC138 is identical in pinout to the LS138. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC138 decodes a three−bit Address to one−of−eight active−low outputs. This device features three Chip Select inputs, two active−low and one active−high to facilitate the demultiplexing, cascading, and chip −selecting functions. The demultiplexing function is accomplished by using the Address inputs to select the desired device output; one of the Chip Selects is used as a data input while the other Chip Selects are held in their active states. Features http://onsemi.com MARKING DIAGRAMS 16 16 1 SOIC−16 D SUFFIX CASE 751B 1 16 16 1 TSSOP−16 DT SUFFIX CASE 948F 1 HC138 = Device Code A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) HC 138 ALYW G G HC138G AWLYWW • • • • • • • • • Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 100 FETs or 29 Equivalent Gates These are Pb−Free Devices ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 Publication Order Number: 74HC138/D 74HC138 A0 A1 A2 1 2 3 15 Y0 14 Y1 13 Y2 12 Y3 11 Y4 10 Y5 9 Y6 7 Y7 A0 A1 A2 CS2 CS3 CS1 Y7 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 ADDRESS INPUTS ACTIVE−LOW OUTPUTS Figure 1. Pin Assignment CHIP− SELECT INPUTS CS1 CS2 CS3 6 4 5 PIN 16 = VCC PIN 8 = GND Figure 2. Logic Diagram FUNCTION TABLE Inputs X X L H H H H H H H H X H X L L L L L L L L H X X L L L L L L L L X X X L L L L H H H H X X X L L H H L L H H X X X L H L H L H L H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H Outputs H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 H = high level (steady state); L = low level (steady state); X = don’t care ORDERING INFORMATION Device 74HC138DR2G 74HC138DTR2G Package SOIC−16 (Pb−Free) TSSOP−16* Shipping † 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 74HC138 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol VCC Vin Iin Iout ICC PD Tstg TL Vout Parameter Value Unit V V V mA mA mA mW _C _C 260 DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) – 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5 ±20 ±25 ±50 500 450 – 65 to + 150 DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating − SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 .W/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 2) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V Min 2.0 0 – 55 0 0 0 Max 6.0 VCC + 125 1000 500 400 Unit V V _C ns http://onsemi.com 3 74HC138 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Symbol VIH Parameter Minimum High−Level Input Voltage Test Conditions Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 3.0 4.5 6.0 2.0 4.5 6.0 3.0 4.5 6.0 6.0 6.0 Guaranteed Limit −55_C to 25_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.48 3.98 5.48 0.1 0.1 0.1 0.26 0.26 0.26 ±0.1 4 v 85_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.34 3.84 5.34 0.1 0.1 0.1 0.33 0.33 0.33 ±1.0 40 v 125_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.20 3.70 5.20 0.1 0.1 0.1 0.40 0.40 0.40 ±1.0 40 mA mA V Unit V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA V VOL Maximum Low−Level Output Voltage Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA Iin ICC Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Vin = VCC or GND Iout = 0 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Symbol tPLH, tPHL Parameter Maximum Propagation Delay, Input A to Output Y (Figures 1 and 4) VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 − Guaranteed Limit −55_C to 25_C 135 90 27 23 110 85 22 19 120 90 24 20 75 30 15 13 10 v 85_C 170 125 34 29 140 100 28 24 150 120 30 26 95 40 19 16 10 v 125_C 205 165 41 35 165 125 33 28 180 150 36 31 110 55 22 19 10 Unit ns tPLH, tPHL Maximum Propagation Delay, CS1 to Output Y (Figures 2 and 4) ns tPLH, tPHL Maximum Propagation Delay, CS2 or CS3 to Output Y (Figures 3 and 4) ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 2 and 4) ns Cin Maximum Input Capacitance pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Package)* 55 pF * Used to determine the no −load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). http://onsemi.com 4 74HC138 SWITCHING WAVEFORMS VALID INPUT A tPLH OUTPUT Y 50% 50% tPHL OUTPUT Y tTHL VALID VCC GND INPUT CS1 tPHL tr 90% 50% 10% 90% 50% 10% tf VCC tPLH GND tTLH Figure 1. Figure 2. TEST POINT tf INPUT CS2, CS3 90% 50% 10% tr VCC tPLH GND DEVICE UNDER TEST OUTPUT C L* OUTPUT Y 90% 50% 10% tPHL tTHL tTLH *Includes all probe and jig capacitance Figure 3. Figure 4. Test Circuit PIN DESCRIPTIONS ADDRESS INPUTS A0, A1, A2 (Pins 1, 2, 3) Address inputs. For any other combination of CS1, CS2, and CS3, the outputs are at a logic high. OUTPUTS Y0 − Y7 (Pins 15, 14, 13, 12, 11, 10, 9, 7) Address inputs. These inputs, when the chip is selected, determine which of the eight outputs is active−low. CONTROL INPUTS CS1, CS2, CS3 (Pins 6, 4, 5) Chip select inputs. For CS1 at a high level and CS2, CS3 at a low level, the chip is selected and the outputs follow the Active−low Decoded outputs. These outputs assume a low level when addressed and the chip is selected. These outputs remain high when not addressed or the chip is not selected. http://onsemi.com 5 74HC138 EXPANDED LOGIC DIAGRAM 15 Y0 14 Y1 A0 1 13 Y2 A1 2 12 Y3 A2 3 11 Y4 10 CS3 CS2 5 4 9 Y5 Y6 7 Y7 CS1 6 http://onsemi.com 6 74HC138 PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K − A− 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 − B− 1 8 P 8 PL 0.25 (0.010) M B S G F K C −T− SEATING PLANE R X 45 _ M D 16 PL M J 0.25 (0.010) TB S A S SOLDERING FOOTPRINT* 6.40 16X 8X 1.12 16 1 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 74HC138 PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K 2X L/2 16 9 J1 B − U− SECTION N−N J N L PIN 1 IDENT. 1 8 0.15 (0.006) T U S A −V− N F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.36 16X 16X 1.26 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ 0.25 (0.010) M K1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ −W− 0.65 PITCH DIMENSIONS: MILLIMETERS 74HC138 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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