ATP101-TL-H

Ordering number : ENA1646A ATP101 P-Channel Power MOSFET http://onsemi.com –30V, –25A, 30mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --25 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 25 mJ --13 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --75 A 30 W °C Note : *1 VDD=--10V, L=200μH, IAV=--13A *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP101-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP101 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/12710PA TKIM TC-00002233 No. A1646-1/7 ATP101 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Conditions Ratings min --30 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--13A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--13A, VGS=--10V ID=--7A, VGS=--4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance typ Unit max V --1 μA ±10 μA --2.6 17 V S 23 30 mΩ 36 51 mΩ 875 pF 220 pF Crss 155 pF 9.2 ns Rise Time td(on) tr 70 ns Turn-OFF Delay Time td(off) 80 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--25A IS=--25A, VGS=0V 70 ns 18.5 nC 3.2 nC 4.0 nC --0.99 --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --13A RL=1.15Ω VIN D PW=10μs D.C.≤1% VOUT G ATP101 P.G 50Ω S Ordering Information Device ATP101-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1646-2/7 ATP101 ID -- VDS V --4.0V Tc= --25 °C 7 5 °C 25° C VDS= --10V Single pulse .5 --25 --10 --5 --15 --10 5°C VGS= --3.5V --20 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 ID= --7A --13A 40 30 20 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° = Tc 5 --2 °C 75 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A Switching Time, SW Time -- ns 2 7 --4.0 --4.5 7A = -VGS 40 A = --13 V, I D 30 --10 V GS= 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT15315 IS -- VSD VGS=0V Single pulse --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V SW Time -- ID --5.0 IT15313 = -, ID 4.5V 50 IT15316 --1.4 IT15317 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V f=1MHz 2 td(off) 100 7 tf 5 3 tr 2 1000 Ciss 7 5 3 Coss 2 Crss td(on) 10 100 7 5 --0.1 --3.5 60 --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF 3 5 --3.0 Case Temperature, Tc -- °C 3 7 --2.5 70 7 5 3 2 °C 25 --2.0 Single pulse 0 --60 VDS= --10V 10 --1.5 RDS(on) -- Tc IT15314 | yfs | -- ID 2 --1.0 Gate-to-Source Voltage, VGS -- V 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 5 --0.5 80 Tc=25°C Single pulse 70 0 IT15312 RDS(on) -- VGS 80 0 --2.0 C --1.5 --25° --1.0 25°C --0.5 Tc= 75°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --2 5 25 °C --5 °C --4 --16. 0 --15 ID -- VGS --30 Tc= 7 V --1 0.0V --8 .0V --20 Drain Current, ID -- A --6 .0V Tc=25°C Drain Current, ID -- A --25 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 IT15318 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15319 No. A1646-3/7 ATP101 VGS -- Qg --10 --7 --6 --5 --4 --1 3 2 2 4 6 8 10 12 14 16 PD -- Tc 20 20 15 10 5 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15322 op er Operation in this area is limited by R DS (on). ati on Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT15321 EAS -- Ta 120 25 0 DC IT15320 30 0 ms --0.1 --0.1 Avalanche Energy derating factor -- % 35 18 10 3 2 --2 0 ID = --25A --10 7 5 --1.0 7 5 --3 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 5 3 2 PW≤10μs 1 0μ s 10 0μ s 1m s s Drain Current, ID -- A --8 0 IDP = --75A --100 7 0m 10 Gate-to-Source Voltage, VGS -- V --9 ASO 2 VDS= --15V ID= --25A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1646-4/7 ATP101 Taping Specification ATP101-TL-H No. A1646-5/7 ATP101 Outline Drawing ATP101-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1646-6/7 ATP101 Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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