BAL99LT1G

BAL99LT1G Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 70 100 Unit Vdc mAdc 1 ANODE 3 CATHODE 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−23 CASE 318 STYLE 18 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C JF Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. JF MG G MARKING DIAGRAM 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. ORDERING INFORMATION Device BAL99LT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: BAL99LT1/D BAL99LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Reverse Breakdown Voltage, (IR = 100 mAdc) Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Recovery Current, (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 W) Diode Capacitance, (VR = 0, f = 1.0 MHz) Reverse Recovery Time, (IF = IR = 10 mAdc, RL = 100 W, measured at IR = 1.0 mAdc) Forward Recovery Voltage, (IF = 10 mAdc, tr = 20 ns) IR − − − 70 − − − − − − − − 2.5 30 50 − 715 855 1000 1250 45 1.5 6.0 1.75 pC pF ns Vdc mAdc Symbol Min Max Unit V(BR) VF Vdc mV QS CD trr VFR TYPICAL CHARACTERISTICS 1.0 100 TA = 150°C IF, FORWARD CURRENT (mA) 0.1 I R, REVERSE CURRENT ( μA) 10 1.0 0.1 0.01 TA = 125°C TA = 85°C TA = 55°C TA = 25°C TA = -55°C 0.01 0.001 150°C 0.0001 125°C 85°C 55°C 0.2 0.3 0.4 25°C 0.5 - 55°C - 40°C 0.6 0.7 0.8 0.9 1.0 1.1 0.001 0.0001 0.00001 0.1 0 10 20 30 40 50 60 70 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage 0.60 0.58 0.56 0.54 0.52 0.50 0.48 0.46 0 1 2 3 4 5 6 Figure 2. Leakage Current CD , DIODE CAPACITANCE (pF) 7 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 2 BAL99LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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