BAS19LT1_07

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Continuous Forward Current Peak Forward Surge Current Junction and Storage Temperature Range Power Dissipation (Note 1) Electrostatic Discharge Symbol VR Value 120 200 250 120 200 250 200 625 −55 to +150 385 HM < 500 MM < 400 Unit Vdc http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 3 1 CATHODE ANODE SC−88A 5 1 CATHODE ANODE 4 CATHODE mAdc mAdc °C mW V V 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 1 3 3 ANODE VRRM Vdc IF IFM(surge) TJ, Tstg PD ESD MARKING DIAGRAMS 3 Jx M G G 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. 5 3 1 SC−88A (SOT−353) CASE 419A 1 4 Jx M G G 2 3 x = P, R, or S P = BAS19LT1 R = BAS20LT1 S = BAS21LT1 or BAS21DW5T1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 9 1 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 THERMAL CHARACTERISTICS (SOT−23) Characteristic Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C THERMAL CHARACTERISTICS (SC−88A) Characteristic Power Dissipation (Note 4) Thermal Resistance − Junction−to−Ambient Derate Above 25°C Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. Symbol PD RqJA Max 385 328 3.0 150 −55 to +150 Unit mW °C/W mW/°C °C °C TJmax TJ, Tstg ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150°C) (VR = 150 Vdc, TJ = 150°C) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) (IBR = 100 mAdc) (IBR = 100 mAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 Symbol IR Min − − − − − − 120 200 250 − − − − Max 0.1 0.1 0.1 100 100 100 − − − Vdc 1.0 1.25 5.0 50 pF ns Unit mAdc V(BR) Vdc VF CD trr http://onsemi.com 2 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 820 W +10 V 2.0 k 100 mH 0.1 mF D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR 90% IR INPUT SIGNAL IR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) IF 0.1 mF tr 10% tp t IF trr t Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 1200 FORWARD VOLTAGE (mV) REVERSE CURRENT (nA) 1000 800 600 400 200 1 TA = −55°C 25°C 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 TA = 150°C 150°C TA = 25°C TA = −55°C 1 2 5 10 20 50 100 200 300 1 10 100 1000 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 3 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 ORDERING INFORMATION Device BAS19LT1 BAS19LT1G BAS19LT3 BAS19LT3G BAS20LT1 BAS20LT1G BAS21LT1 BAS21LT1G BAS21LT3 BAS21LT3G BAS21DW5T1 BAS21DW5T1G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SC−88A SC−88A (Pb−Free) Shipping † 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 SEE VIEW C E 1 2 HE c b q 0.25 e A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J G A 5 4 S 1 2 3 − B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 D 5 PL 0.2 (0.008) M B M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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