BAT54CLT1G

BAT54CLT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc • Pb−Free Package is Available 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES 1 ANODE 3 CATHODE 2 ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 225 1.8 RqJA IF TJ Tstg 508 (Note 1) 311 (Note 2) 200 Max −55 to +125 −55 to +150 mW mW/°C °C/W mA °C °C Value 30 Unit V 1 2 3 MARKING DIAGRAM 3 5C M G 1 2 SOT−23 CASE 318 STYLE 9 5C = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. ORDERING INFORMATION Device BAT54CLT1 BAT54CLT1G Package SOT−23 SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 September, 2005 − Rev. 3 Publication Order Number: BAT54CLT1/D BAT54CLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non−Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 − − − − − − − − − − − Typ − 7.6 0.5 0.22 0.41 0.52 − 0.29 0.35 − − − Max − 10 2.0 0.24 0.5 0.8 5.0 0.32 0.40 200 300 600 Unit V pF mAdc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc http://onsemi.com 2 BAT54CLT1 820 W +10 V 2k 100 mH 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 mF tr 10% tp T IF trr T Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 IF, FORWARD CURRENT (mA) 1 25°C IR, REVERSE CURRENT (mA) 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 0 5 TA = 25°C 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 1000 TA = 150°C −55°C Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 BAT54CLT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. DIM A A1 b c D E e L HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 D 3 1 2 E HE e A b A1 L C STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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