BC212L_J35Z

BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 300 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Symbol Max Units PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W  2000 Fairchild Semiconductor International Rev. A 7/24/00 BC212L PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA 50 V BVCBO Collector-Base Breakdown Voltage IC = 10 µA 60 V BVEBO Emitter-Base Breakdown Voltage IE = 10 µA 5 V ICBO Collector Cutoff Current VCB = 30V 15 nA IEBO Emitter Cutoff Current VEB = 4V 15 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 uA, VCE = 5 V IC = 2 mA, VCE = 5 V 40 60 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 5 mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 5 mA 1.1 V VBE(on) Base-Emitter On Voltage IC = 2 mA, VCE = 5 V 0.72 V 10 pF 0.6 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz hfe Small Signal Current Gain IC = 2 mA,VCE = 5 V, f=1kHz NF Noise Figure IC = 200 uA,VCE = 5 V, f=1kHz, Rg=2KOhms,BW=200Hz fT Current Gain-Bandwidth Product VCE=5V, IC=10mA,f=100MHz 60 10 200 dB MHz *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% __________________________________________________________________________________ Rev. A 7/24/00 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G