BC338-25

BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C 3 EMITTER • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range MARKING DIAGRAM BC33 xxxx YWW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W TO−92 (TO−226) CASE 29 xxxx Y WW = Specific Device Code = Year = Work Week Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 July, 2004 − Rev. 4 Publication Order Number: BC337/D BC337, BC337−16, BC337−25, BC337−40, BC338−25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) BC338 Collector −Emitter Breakdown Voltage (IC = 100 mA, IE = 0) BC338 Emitter −Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337−16 BC337−25/BC338−25 BC337−40 100 100 160 250 60 VBE(on) VCE(sat) − − − − − − − − − 630 250 400 630 − 1.2 0.7 Vdc Vdc − BC337 BC338 ICES BC337 BC338 IEBO − − − − − − 100 100 100 nAdc V(BR)CE BC337 O Symbol Min Typ Max Unit Vdc 45 25 50 30 5.0 − − − − − − − Vdc − − − Vdc nAdc − − − − 100 100 nAdc V(BR)CE BC337 S V(BR)EB O ICBO (IC = 300 mA, VCE = 1.0 V) Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 0.3 0.2 Cob fT − − 15 210 − − pF MHz r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001 10 20 50 100 Figure 1. Thermal Response http://onsemi.com 2 BC337, BC337−16, BC337−25, BC337−40, BC338−25 1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 ms dc TC = 25°C 100 dc TA = 25°C 1000 VCE = 1 V TJ = 25°C hFE, DC CURRENT GAIN 100 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR−EMITTER VOLTAGE 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (MA) 1000 Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 1.0 TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.6 IC = 10 mA 100 mA 300 mA 500 mA 0.4 0.4 0.2 0 0.01 0.2 VCE(sat) @ IC/IB = 10 0.1 1 IB, BASE CURRENT (mA) 10 100 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 4. Saturation Region Figure 5. “On” Voltages θV, TEMPERATURE COEFFICIENTS (mV/°C) +1 qVC for VCE(sat) 0 C, CAPACITANCE (pF) 100 Cib 10 −1 −2 qVB for VBE Cob 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 3 BC337, BC337−16, BC337−25, BC337−40, BC338−25 ORDERING INFORMATION Device BC337 BC337RL1 BC337ZL1 BC337−16 BC337−16RL1 BC337−16ZL1 BC337−25 BC337−25RL1 BC337−25ZL1 BC337−25ZL1G BC337−40 BC337−40RL1 BC337−40ZL1 BC338−25ZL1 Package TO−92 TO−92 TO−92 TO−92 TO−92 TO−92 TO−92 TO−92 TO−92 TO−92 (Pb−Free) TO−92 TO−92 TO−92 TO−92 Marking 7 7 7 7−16 7−16 7−16 7−25 7−25 7−25 8−25 7−40 7−40 7−40 8−25 Shipping† 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Ammunition 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Ammunition 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BC337, BC337−16, BC337−25, BC337−40, BC338−25 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 5 BC337, BC337−16, BC337−25, BC337−40, BC338−25 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BC337/D