BC517RL1

BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C 12 3 http://onsemi.com COLLECTOR 1 BASE 2 EMITTER 3 TO−92 CASE 29 STYLE 17 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC 517 AYWW G G MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC517 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC517/D 1 January, 2006 − Rev. 3 BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IBE = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VCB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2. fT = |hfe| • ftest fT − 200 − MHz hFE 30,000 VCE(sat) − VBE(on) − − 1.4 − 1.0 Vdc − − Vdc − V(BR)CES 30 V(BR)CBO 40 V(BR)EBO 10 ICES − ICBO − IEBO − − 100 − 100 nAdc − 500 nAdc − − nAdc − − Vdc − − Vdc Vdc Symbol Min Typ Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 200 100 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 mA 10 mA en, NOISE VOLTAGE (nV) IC = 1.0 mA 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA 100 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 BC517 SMALL−SIGNAL CHARACTERISTICS 20 TJ = 25°C |h fe |, SMALL−SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. High Frequency Current Gain 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k TJ = 125°C 3.0 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA hFE , DC CURRENT GAIN 25°C 2.0 1.5 −55 °C VCE = 5.0 V 1.0 0.5 0.1 0.2 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/ C) ° 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 −1.0 −2.0 −3.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C −55 °C TO 25°C 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −6.0 5.0 7.0 10 −55 °C TO 25°C 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 BC517 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 0.05 SINGLE PULSE D = 0.5 0.2 () RESISTANCE (NORMALIZED) SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 TA = 25°C T C = 2 5° C 1.0 ms 100 ms 1.0 s FIGURE A tP PP PP t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC517 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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