BC846BLT1

BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3 ESD Rating − Machine Model: >400 V 1 BASE MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Vdc 65 45 30 3 VCBO BC846 BC847, BC850 BC848, BC849 Emitter−Base Voltage Vdc 80 50 30 1 2 VEBO BC846 BC847, BC850 BC848, BC849 Collector Current − Continuous 2 EMITTER Unit VCEO BC846 BC847, BC850 BC848, BC849 Collector−Base Voltage Value Vdc SOT−23 CASE 318 STYLE 6 6.0 6.0 5.0 IC 100 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM xxD THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W RJA PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C xx D = Specific Device Code = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR−5 = 1.0
0.75
0.062 in. 2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.  Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 6 1 Publication Order Number: BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 − − − − − − V Collector −Emitter Breakdown Voltage BC846A,B (IC = 10 A, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 − − − − − − V Collector −Base Breakdown Voltage (IC = 10 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 − − − − − − V Emitter −Base Breakdown Voltage (IE = 1.0 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 − − − − − − V ICBO − − − − 15 5.0 nA A hFE − − − 90 150 270 − − − − 110 200 180 290 220 450 420 520 800 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k
, f = 1.0 kHz, BW = 200 Hz) NF BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C Figure 1. http://onsemi.com 2 pF dB − − − − 10 4.0 BC846ALT1 Series BC847, BC848, BC849, BC850 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 40 f
, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 3.0 1.0 100 Figure 4. Base−Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 50 BC846ALT1 Series BC846 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 0.2 50 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 −1.8 VB for VBE Cib 10 6.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 −55°C to 125°C −2.2 −2.6 −3.0 f
, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 2.0 200 −1.4 0.5 0.2 50 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient 40 4.0 100 −1.0 Figure 9. Collector Saturation Region 20 200 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 100 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 BC846ALT1 Series ORDERING INFORMATION Marking Package Shipping† BC846ALT1 1A SOT−23 3,000 / Tape & Reel BC846ALT3 1A SOT−23 10,000 / Tape & Reel BC846BLT1 1B SOT−23 3,000 / Tape & Reel BC846BLT3 1B SOT−23 10,000 / Tape & Reel BC847ALT1 1E SOT−23 BC847ALT1G 1E SOT−23 (Pb−Free) 3,000 / Tape & Reel BC847BLT1 1F SOT−23 3,000 / Tape & Reel BC847CLT1 1G SOT−23 BC847CLT1G 1G SOT−23 (Pb−Free) BC847CLT3 1G SOT−23 BC847CLT3G 1G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC848ALT1 1J SOT−23 3,000 / Tape & Reel BC848ALT1G 1J SOT−23 (Pb−Free) 3,000 / Tape & Reel BC848BLT1 1K SOT−23 3,000 / Tape & Reel BC848BLT3 1K SOT−23 10,000 / Tape & Reel BC848CLT1 1L SOT−23 BC848CLT1G 1L SOT−23 (Pb−Free) 3,000 / Tape & Reel BC849BLT1 2B SOT−23 3,000 / Tape & Reel BC849BLT3 2B SOT−23 10,000 / Tape & Reel BC849CLT1 2C SOT−23 3,000 / Tape & Reel BC849CLT1G 2C SOT−23 (Pb−Free) 3,000 / Tape & Reel BC850BLT1 2F SOT−23 3,000 / Tape & Reel BC850CLT1 2G SOT−23 BC850CLT1G 2G SOT−23 (Pb−Free) Device 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC846ALT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AI NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm 
inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. BC846ALT1/D