BC857BDW1T1G

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features (3) http://onsemi.com (2) (1) Q1 Q2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIMUM RATINGS Rating Collector − Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 Symbol VCEO Value −65 −45 −30 −80 −50 −30 −5.0 −100 Unit V SOT−363/SC−88 CASE 419B STYLE 1 V 1 Collector − Base Voltage VCBO MARKING DIAGRAM V mAdc 3x M G G Emitter − Base Voltage Collector Current −Continuous VEBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 − 55 to +150 Unit mW mW/°C °C/W °C 3x = Specific Device Code x = B, F, G, or L (See Ordering Information) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 7 1 Publication Order Number: BC856BDW1T1/D BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857B Only BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO V −65 −45 −30 −80 −50 −30 −80 −50 −30 −5.0 −5.0 −5.0 − − − − − − − − − − − − − − − − − − − V − − − V − − − V − − − −15 −4.0 nA mA Symbol Min Typ Max Unit Collector − Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) V(BR)CES Collector − Base Breakdown Voltage (IC = −10 mA) V(BR)CBO Emitter − Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) BC856B, BC857B BC857C, BC858C BC856B, BC857B BC857C, BC858C ICBO hFE − − − 220 420 150 270 290 520 − − −0.7 −0.9 − − − − 475 800 V − − − − −0.6 − −0.3 −0.65 V − − V −0.75 −0.82 Collector − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) VCE(sat) VBE(sat) VBE(on) fT Cob NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 2 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856 -1.0 h FE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 0 -0.2 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.5 -1.0 -50 -100 -200 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 Figure 1. DC Current Gain Figure 2. “On” Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 qVB for VBE -55°C to 125°C -0.8 -2.2 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob 20 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/BC858 2.0 h FE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages -2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C -1.6 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 IC = -20 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 9. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 10. Base−Emitter Temperature Coefficient 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25°C 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 Cob TA = 25°C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25°C TJ = 25°C 3 ms -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -2.0 -1.0 Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device BC856BDW1T1G BC856BDW1T3G BC857BDW1T1G BC857CDW1T1G BC858CDW1T1G Device Marking 3B 3B 3F 3G 3L Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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