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BCV27
NPN Darlington Transistor
Description
C
This device is designed for applications requiring
extremely high current gain at collector currents to 1.0 A.
Sourced from process 05.
E
SOT-23
Mark: FF
B
Ordering Information
Part Number
Marking
Package
Packing Method
BCV27
FF
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
10
V
Collector Current - Continuous
1.2
A
-55 to +150
°C
IC
TJ, TSTG
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BCV27 Rev. 1.1.0
www.fairchildsemi.com
BCV27 — NPN Darlington Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
350
mW
Derate Above 25°C
2.8
mW/°C
Thermal Resistance, Junction-to-Ambient
357
°C/W
Total Device Dissipation
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 μA, IE = 0
40
V
V(BR)EBO
10
Emitter-Base Breakdown Voltage
IE = 100 nA, IC = 0
ICBO
Collector Cut-Off Current
VCB = 30 V, IE = 0
0.1
μA
V
IEBO
Emitter Cut-Off Current
VEB = 10 V, IC = 0
0.1
μA
IC = 1.0 mA, VCE = 5.0 V
4000
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
10000
IC = 100 mA, VCE = 5.0 V
20000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
fT
Current Gain - Bandwidth Product
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
220
MHz
Cc
Collector Capacitance
VCB = 30 V, IE = 0,
f = 1.0 MHz
3.5
pF
© 1997 Fairchild Semiconductor Corporation
BCV27 Rev. 1.1.0
www.fairchildsemi.com
2
BCV27 — NPN Darlington Transistor
Thermal Characteristics(3)
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN (K)
250
VCE = 5V
200
125 °C
150
25 °C
100
- 40 °C
50
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
- 40 °C
25 °C
1.2
125 °C
0.8
0.4
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
25°C
125 °C
0.4
0
1000
1
10
100
I C - COLLECTOR CURRE NT (mA)
1000
2
- 40 °C
1.6
25 °C
1.2
125 °C
0.8
VCE = 5V
0.4
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
1000
Figure 4. Base Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
100
BVCER - BREAKDOWN VOLTAGE (V)
I CBO - COLLE CTOR CURRENT (nA)
- 40 °C
0.8
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTE R VOLTAGE (V)
β = 1000
1.6
β = 1000
1.2
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
2
1.6
62.5
VCB = 30V
10
62
61.5
1
61
60.5
0.1
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE ( ° C)
59.5
0.1
125
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
BCV27 Rev. 1.1.0
60
1
10
100
1000
RESISTANCE (k Ω )
Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
www.fairchildsemi.com
3
BCV27 — NPN Darlington Transistor
Typical Performance Characteristics
f T - GAIN BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
f = 1.0 MHz
20
10
Cib
5
Cob
2
0.1
1
V
10
100
- COLLECTOR VOLTAGE(V)
500
V ce = 5V
400
300
200
100
0
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
Figure 8. Gain Bandwidth Product vs.
Collector Current
Figure 7. Input and Output Capacitance vs.
Reverser Voltage
P D - POWER DISSIPATION (mW)
350
300
250
SOT-23
200
150
100
50
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
Figure 9. Power Dissipation vs. Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
BCV27 Rev. 1.1.0
www.fairchildsemi.com
4
BCV27 — NPN Darlington Transistor
Typical Performance Characteristics (Continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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