BCW71

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BCW71 350 2.8 357 mW mW/°C °C/W 3 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 45 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V IE = 10 µA, IC = 0 5.0 ICBO Collector-Cutoff Current VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 100°C V 100 10 µA ON CHARACTERISTICS hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA VBE(on) Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V 110 220 0.25 V 0.85 0.6 V 0.75 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product 330 Output Capacitance IC = 10 mA, VCE = 5.0 V, f = 35 MHz VCE = 10 V, IE = 0, f = 1.0 MHz Cobo Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 9.0 NF Noise Figure IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz MHz 4.0 pF pF 10 dB Typical Pulsed Current Gain vs Collector Current 400 Vce = 5V 125 °C 300 25 °C 200 - 40 °C 100 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 400 BCW71 NPN General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VBEON - BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.6 25 °C 125 °C 0.4 V CE = 5V 0.2 1 f = 1.0 MHz VCB = 60V 1 0.1 25 50 75 100 125 TA - AMBIE NT TEMPERATURE ( ° C) 3 10 Cib Cob 1 0.1 0.1 150 1 10 Vce - COLLECTOR VOLTAGE (V) 100 Power Dissipation vs Ambient Temperature 350 270 P D - POWER DISSIPATION (mW) 300 ts 240 210 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 tf 60 0 10 500 100 10 Switching Times vs Collector Current TIME (nS) 10 100 I C - COLLECTOR CURRENT (mA) Input and Output Capacitance vs Reverse Voltage CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) - 40 °C 0.8 Collector-Cutoff Current vs Ambient Temperature 30 BCW71 NPN General Purpose Amplifier tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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