BCW72LT1D

BCW72LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 100 Unit Vdc Vdc Vdc mAdc 3 Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C K2 M G G 1 K2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW72LT1G Package SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: BCW72LT1/D BCW72LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100°C) ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) Base − Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) Base − Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Input Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF − − 10 MHz − − − 300 − 9.0 − pF 4.0 pF − dB hFE VCE(sat) − 200 − − − 0.6 − − 0.21 0.85 − 450 Vdc 0.25 − Vdc − Vdc 0.75 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Vdc 45 45 50 5.0 − − − − − − − − − Vdc − Vdc − Vdc − 100 10 nAdc mAdc Symbol Min Typ Max Unit VBE(sat) VBE(on) EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V