BD136/138/140
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
TO-126
1
1. Emitter
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BD136
: BD138
: BD140
Value
- 45
- 60
- 80
Units
V
V
V
VCEO
Collector-Emitter Voltage
: BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
- 1.5
A
ICP
Collector Current (Pulse)
- 3.0
A
IB
Base Current
- 0.5
A
PC
Collector Dissipation (TC=25°C)
12.5
W
PC
Collector Dissipation (Ta=25°C)
1.25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
Test Condition
IC = - 30mA, IB = 0
Min.
Typ.
Max.
- 45
- 60
- 80
Units
V
V
V
ICBO
Collector Cut-off Current
VCB = - 30V, IE = 0
- 0.1
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 10
µA
hFE1
hFE2
hFE3
* DC Current Gain
VCE = - 2V, IC = - 5mA
VCE = - 2V, IC = - 0.5A
VCE = - 2V, IC = - 150mA
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 500mA, IB = - 50mA
VBE(on)
* Base-Emitter ON Voltage
VCE = - 2V, IC = - 0.5A
25
25
40
250
- 0.5
V
-1
V
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classificntion
Classification
6
10
16
hFE3
40 ~ 100
63 ~ 160
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD136/138/140
Typical Characteristics
100
60
50
40
30
20
10
0
-10
-100
IC = 20 IB
-400
-350
IB
70
-450
IC = 10
hFE, DC CURRENT GAIN
80
VCE(sat)[mV], SATURATION VOLTAGE
-500
VCE = -2V
90
-300
-250
-200
-150
-100
-50
-0
-1E-3
-1000
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-10
-1.1
-1.0
IC MAX. (Pulsed)
-0.5
-0.4
BD138
-0.2
BD140
-0.3
-0.1
BD136
IC[A], COLLECTOR CURRENT
-0.6
-1
DC
)
(on V
V BE
5
=V CE
-0.7
s
-0.8
10us
IC MAX. (Continuous)
0u
10
t)
(sa
V BE 0 I B
1
IC =
-0.9
1 ms
VBE[V], BASE-EMITTER VOLTAGE
-0.01
-0.01
-0.1
-1E-3
-0.01
-0.1
-1
-10
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
PC[W], POWER DISSIPATION
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD136/138/140
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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