BD241CG

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features • • • • High Current Gain − Bandwidth Product Compact TO−220 AB Package Epoxy Meets UL94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Collector−Emitter Voltage VCEO 80 100 Vdc Collector−Emitter Voltage VCES 90 115 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 3.0 Adc ICM 5.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0.32 W W/°C TJ, Tstg – 65 to + 150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Rating Collector Current −Continuous Collector Current − Peak Operating and Storage Junction Temperature Range Unit Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. COMPLEMENTARY COLLECTOR 2,4 1 BASE 1 BASE EMITTER 3 Characteristic Symbol Max Unit RqJA 62.5 °C/W Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 10 1 EMITTER 3 MARKING DIAGRAM 4 TO−220 CASE 221A STYLE 1 1 2 AYWW BD24xxG 3 BD24xx = Device Code xx = 1C, 2B, or 2C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient COLLECTOR 2,4 ORDERING INFORMATION Device Package Shipping† BD241CG TO−220 (Pb−Free) 50 Units/Rail BD242BG TO−220 (Pb−Free) 50 Units/Rail BD242CG TO−220 (Pb−Free) 50 Units/Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: BD241C/D BD241C (NPN), BD242B (PNP), BD242C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS VCEO Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BD242B BD241C, BD242C Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) BD242B BD241C, BD242C Vdc 80 100 ICEO mAdc 0.3 mAdc ICES 200 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc 1.0 ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VCE(sat) Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) Vdc 1.2 Vdc 1.8 DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz 3.0 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = |hfe| • ftest. PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 140 160 BD241C (NPN), BD242B (PNP), BD242C (PNP) 2.0 VCC TURN‐ON PULSE APPROX + 11 V Vin RL 0.7 0.5 SCOPE RK t1 t3 APPROX + 11 V t, TIME (s) μ Cjd%Ceb Vin 0 VEB(off) - 4.0 V t1 v 7.0 ns 100 t t2 t 500 ms t3 t 15 ns tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 td @ VBE(off) = 2.0 V 0.07 0.05 Vin t2 TURN‐OFF PULSE IC/IB = 10 TJ = 25°C 1.0 0.03 0.02 0.03 DUTY CYCLE [ 2.0% APPROX - 9.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Equivalent Circuit 1.0 0.7 0.5 3.0 Figure 3. Turn−On Time D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 5.0 1.0 ms 5.0 ms 100 ms 2.0 1.0 0.5 0.2 0.1 5.0 SECOND BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area www.onsemi.com 3 BD241C (NPN), BD242B (PNP), BD242C (PNP) 3.0 2.0 0.3 0.2 ts′ tf @ VCC = 30 V TJ = + 25°C 200 CAPACITANCE (pF) t, TIME (s) μ 1.0 0.7 0.5 300 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C tf @ VCC = 10 V 0.1 100 Ceb 70 50 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.1 2.0 3.0 Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Capacitance 500 hFE, DC CURRENT GAIN 300 100 70 VCE = 2.0 V TJ = 150°C 25°C -55°C 50 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25°C 1.6 1.2 IC = 0.3 A θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 3.0 A 0.4 0 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.4 0.2 1.0 A 0.8 Figure 8. DC Current Gain 1.2 20 30 40 1.0 2.0 3.0 +2.5 +2.0 +1.5 *APPLIES FOR IC/IB ≤ 5.0 TJ = - 65°C TO + 150°C +1.0 +0.5 *qVC FOR VCE(sat) 0 -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients www.onsemi.com 4 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) BD241C (NPN), BD242B (PNP), BD242C (PNP) IC, COLLECTOR CURRENT (A) μ 103 102 VCE = 30 V 101 TJ = 150°C 100 100°C 10-1 REVERSE 10-2 FORWARD 25°C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 107 VCE = 30 V IC = 10 x ICES 106 105 IC ≈ ICES IC = 2 x ICES 104 103 102 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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