BD244ATU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD244 : BD244A : BD244B : BD244C - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C - 45 - 60 - 80 - 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A - 10 A ICP *Collector Current (Pulse) IB Base Current -2 A PC Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition Min. IC = - 30mA, IB = 0 - 45 - 60 - 80 - 100 Typ. Max. Units V V V V VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 - 0.7 - 0.7 mA mA VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 - 0.4 - 0.4 - 0.4 - 0.4 mA mA mA mA -1 mA - 1.5 V -2 V IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE * DC Current Gain VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 6A, IB = - 1A VBE(on) * Base-Emitter ON Voltage VCE = - 4V, IC = - 6A 30 15 * Pulse Test: PW =300µs, duty Cycle =2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C Typical Characteristics -1.8 1000 VBE(sat)(V), SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 2V 100 IC = 10.1 IB -1.7 -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 10 -0.01 -0.1 -1 -0.5 -0.1 -10 -1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage -1 VCE(sat)(V), SATURATION VOLTAGE -10 -100 10µ s IC(max) 10 m s s -0.1 -10 1m 100µ s DC IC[A], COLLECTOR CURRENT IC = 10.1 IB -1 BD244 BD244A BD244B BD244C -0.1 -0.01 -0.1 -1 -10 -1 -10 -100 -1000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o T[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. 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