BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
• High Current Gain Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
Symbol
Value
Unit
VCEO
80
100
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
6
Adc
ICM
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
−65 to +150
°C
Collector Current − Peak
Operating and Storage Junction
Temperature Range
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
Vdc
80
100
TJ, Tstg
PNP
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
Collector Current − Continuous
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EMITTER 3
4
TO−220
CASE 221A
STYLE 1
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Thermal Resistance, Junction−to−Case
2
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
EMITTER 3
BD24xy =
Symbol
Max
Unit
RqJC
1.92
°C/W
BD24xyG
AY WW
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
Device
Package
Shipping
BD243BG
TO−220
(Pb−Free)
50 Units / Rail
BD243CG
TO−220
(Pb−Free)
50 Units / Rail
BD244BG
TO−220
(Pb−Free)
50 Units / Rail
BD244CG
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BD243B/D
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
Min
Max
VCEO(sus)
Vdc
80
100
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Unit
−
−
mAdc
−
0.7
mAdc
−
400
−
400
−
1.0
30
15
−
−
−
1.5
−
2.0
3.0
−
20
−
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = hfe • ftest
PD, POWER DISSIPATION (WATTS)
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
2.0
VCC
- 30 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
1.0
25 ms
0.7
0.5
RC
+ 11 V
t, TIME (s)
μ
SCOPE
RB
0
- 9.0 V
51
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1
0.3
0.2
tr
0.1
0.07
0.05
-4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
0.02
0.06
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
td @ VBE(off) = 5.0 V
1.0
0.2
0.4 0.6
2.0
IC, COLLECTOR CURRENT (AMP)
0.1
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
4.0
6.0
Figure 3. Turn−On Time
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RqJC(max) = 1.92°C/W
0.02
t1
0.03
0.01
0.02
SINGLE
PULSE
t2
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C, TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.5 ms
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
1.0
ms
2.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
1.0
0.5
5.0 ms
CURVES APPLY BELOW RATED VCEO
0.3
0.2
0.1
5.0
BD243B, BD244B
BD243C, BD244C
40
80
10
20
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
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3
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
5.0
300
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
t, TIME (s)
μ
1.0
TJ = 25°C
200
CAPACITANCE (pF)
3.0
2.0
0.7
0.5
0.3
0.2
tf
0.1
0.07
0.05
0.06
100
70
Cob
50
1.0
0.2
0.4 0.6
2.0
IC, COLLECTOR CURRENT (AMP)
0.1
Cib
30
0.5
4.0 6.0
1.0
2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn-Off Time
30
20
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
VCE = 2.0 V
TJ = 150°C
100
70
50
25°C
-55°C
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
6.0
2.0
TJ = 25°C
1.6
IC = 1.0 A
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.6
0.4
0
0.06
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
0.1
0.2
0.3 0.4 0.6
1.0
5.0 A
0.8
0.4
0
10
20
30
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
Figure 9. Collector Saturation Region
2.0
0.8
2.5 A
1.2
Figure 8. DC Current Gain
1.2
50
Figure 7. Capacitance
500
300
200
30
2.0 3.0 4.0
+2.5
+2.0
+1.5
+1.0
+ 25°C to + 150°C
+0.5
0
*qVC FOR VCE(sat)
- 55°C to + 25°C
-0.5
+ 25°C to + 150°C
-1.0
-1.5
qVB FOR VBE
- 55°C to + 25°C
-2.0
-2.5
0.06
6.0
*APPLIES FOR IC/IB ≤ 5.0
0.1
0.2
0.3
0.5
1.0
2.0 3.0 0.4
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
0.6
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
103
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
102
TJ = 150°C
101
100°C
25°C
100
10-1
10-2
IC = ICES
REVERSE
10-3
-0.3 -0.2 -0.1
FORWARD
0
+0.1 +0.2 +0.3
+0.4 +0.5 +0.6 +0.7
10M
VCE = 30 V
1.0M
IC = 10 x ICES
IC = 2 x ICES
100k
IC ≈ ICES
10k
1.0k
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.1k
20
40
60
80
100
120
140
160
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base−Emitter Resistance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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