BD439

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method BD433S BD433 TO-126 BULK BD435S BD435 TO-126 BULK BD435STU BD435 TO-126 RAIL BD437S BD437 TO-126 BULK Remarks * The suffix "S" of FSID denotes TO126 package. Absolute Maximum Ratings Symbol VCBO VCES VCEO TA = 25°C unless otherwise noted Value Units Collector-Base Voltage : BD433 : BD435 : BD437 Parameter 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current 1 A PC Collector Dissipation (TC = 25°C) 36 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to 150 °C © 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 www.fairchildsemi.com 1 BD433/435/437 — NPN Epitaxial Silicon Transistor July 2011 TA = 25°C unless otherwise noted Symbol Parameter VCEO(sus) Collector-Emitter Sustaining Voltage : BD433 : BD435 : BD437 ICBO Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 22 32 45 Units V V V Collector Cut-off Current : BD433 : BD435 : BD437 VCB = 22V, IE = 0 VCB = 32V, IE = 0 VCB = 45V, IE = 0 100 100 100 μA μA μA Collector Cut-off Current : BD433 : BD435 : BD437 VCE = 22V, VBE = 0 VCE = 32V, VBE = 0 VCE = 45V, VBE = 0 100 100 100 μA μA μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 0.5 0.5 0.6 V V V 1.1 1.1 1.2 V V V ICEO VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 IC = 2A, IB = 0.2A 0.2 0.2 0.2 VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 130 130 140 3 MHz * Pulse Test: PW≤300μs, duty Cycle≤1.5% Pulsed © 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 www.fairchildsemi.com 2 BD433/435/437 — NPN Epitaxial Silicon Transistor Electrical Characteristics 1 1000 100 10 1 0.01 0.1 1 10 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 1V 0.1 0.01 0.1 100 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 5.0 IC[A], COLLECTOR CURRENT CCBO(pF), COLLECTOR BASE CAPACITANCE 1000 VCE = 1V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 100 10 1 0.1 1 Figure 3. Base-Emitter On Voltage 10 100 1000 Figure 4. Collector-Base Capacitance 48 IC MAX. (Pulsed) 10μs 42 PC[W], POWER DISSIPATION DC 100μs 10 1m ms s IC Max. (Continuous) 1 BD433 BD435 BD437 0.1 1 10 36 30 24 18 12 6 0 100 0 25 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 10 VCB[V], COLLECTOR BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 10 www.fairchildsemi.com 3 BD433/435/437 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics TO-126    0$;      '    ;   ;  ƒ 352'8&7,21 7(50,1$/ /(1*7+' &2'( 76678  7678  127(6 121( $7+,63$&.$*('2(6127&203/