BMS3003-1E

Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • • • ON-resistance RDS(on)1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% --60 V ±20 V --78 A --312 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 420 mJ --60 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ.) 7529-001 • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./tube BMS3003-1E 4.7 10.16 3.18 15.87 6.68 3.3 Electrical Connection 2 A MS3003 3.23 15.8 Marking 2.54 LOT No. 1 12.98 2.76 1.47 MAX DETAIL-A 0.8 1 2 3 0.5 FRAME 2.54 2.54 ( 1.0) EMC 3 (0.84) 1 : Gate 2 : Drain 3 : Source TO-220F-3SG ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 40714 TKIM/91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No.A1907-1/5 BMS3003 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--39A 130 RDS(on)1 ID=--39A, VGS=--10V 5.0 6.5 mΩ RDS(on)2 ID=--39A, VGS=--4V 6.5 9.0 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss --1.2 --10 μA ±10 μA --2.6 VDS=--20V, f=1MHz V S 13200 pF 1300 pF Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time td(on) 90 ns Rise Time tr 360 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--78A, VGS=0V Reverse Recovery Time trr See Fig.3 150 ns Reverse Recovery Charge Qrr IS=--78A, VGS=0V, di/dt=--100A/μs 470 nC See Fig.2 1200 ns 680 ns 285 nC 35 nC VDS=--36V, VGS=--10V, ID=--78A 70 nC --0.95 --1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit D 0V -10V L ≥50Ω RG G VDD= -36V VIN ID= -39A RL=0.92Ω VIN BMS3003 0V -10V Fig.2 Switching Time Test Circuit S 50Ω VDD D PW=10μs D.C.≤1% VOUT G P.G BMS3003 50Ω S Fig.3 Reverse Recovery Time Test Circuit BMS3003 D L G VDD S Driver MOSFET Ordering Information Device BMS3003-1E Package Shipping memo TO-220F-3SG 50pcs./tube Pb Free No.A1907-2/5 BMS3003 --60 --40 --80 --60 --40 --20 --20 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Drain to Source Voltage, VDS -- V Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID= --39A Single pulse 14 12 10 8 Tc=75°C 6 25°C --25°C 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 2 °C °C -25 =c T C 75° 3 2 10 7 5 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 tr td(on) 100 7 5 3 9A = --3 V, I D 4 9A = = --3 VGS 0V, I D 1 = VGS 8 6 4 2 --25 0 25 50 75 100 125 150 IT16242 IS -- VSD VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 100000 7 5 --1.4 IT16244 f=1MHz Ciss 3 2 Coss 1000 7 5 Crss 3 2 2 10 --0.1 --5.0 IT16240 10000 7 5 tf 3 2 --4.5 10 --0.1 7 5 3 2 --0.01 Ciss, Coss, Crss -- pF 1000 7 5 --4.0 12 3 2 td(off) --3.5 Single pulse --1000 7 5 3 2 5 7 --100 VDD= --36V VGS= --10V --3.0 14 IT16243 SW Time -- ID 10000 7 5 --2.5 Case Temperature, Tc -- °C 2 3 --2.0 RDS(on) -- Tc 0 --50 3 2 --1.5 16 --10 3 1.0 --0.1 Switching Time, SW Time -- ns --9 VDS= --10V 25 --1.0 IT16241 | yfs | -- ID 100 7 5 --0.5 Gate to Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate to Source Voltage, VGS -- V 1000 7 5 0 IT16239 RDS(on) -- VGS 16 0 --1.4 Tc= 75°C 25°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25° C VGS= --3V --25°C --80 --100 Tc=7 5°C --25 °C Drain Current, ID -- A --100 --120 75° C --140 0V --120 VDS= --10V 25° C V --4 --1 Drain Current, ID -- A --140 ID -- VGS --160 --6 V --8 V Tc=25°C Tc= --2 5°C ID -- VDS --160 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT16245 100 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT16246 No.A1907-3/5 BMS3003 VGS -- Qg --10 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --100 7 5 3 2 --7 --6 --5 --4 --3 --1 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Ta 1.0 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C EAS -- Ta 120 140 160 IT16249 10 μs Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain to Source Voltage, VDS -- V PD -- Tc 45 1.5 0μ s Operation in this area is limited by RDS(on). IT16247 2.0 0 Avalanche Energy derating factor -- % 300 10 1m s 1 10 0ms 0m DC s op era tio n ID= --78A --0.1 --0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 IDP= --312A (PW≤10μs) --10 7 5 3 2 --1.0 7 5 3 2 --2 0 ASO --1000 7 5 3 2 VDS= --36V ID= --78A 5 7 --100 IT16248 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16250 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16251 No.A1907-4/5 BMS3003 Outline Drawing BMS3003-1E Mass (g) Unit 1.8 mm * For reference Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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