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BS107

BS107

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    BS107 - Small Signal MOSFET 250 mAmps, 200 Volts - ON Semiconductor

  • 数据手册
  • 价格&库存
BS107 数据手册
BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ±20 ±30 250 500 350 –55 to 150 mW °C G S Unit Vdc Vdc Vpk mAdc http://onsemi.com 250 mAMPS 200 VOLTS RDS(on) = 14 Ω (BS107) RDS(on) = 6.4 Ω (BS107A) N–Channel D 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. TO–92 CASE 29 Style 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS107 YWW 1 Drain 2 Gate Y WW 3 Source = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 November, 2000 – Rev. 2 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) – – – – – – 4.5 4.8 28 14 6.0 6.4 – 200 – – – 0.01 30 – 10 nAdc Vdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain–Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0 – 3.0 Vdc Ohms SMALL–SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) Ciss Crss Coss gfs – – – 200 60 6.0 30 400 – – – – pF pF pF mmhos SWITCHING CHARACTERISTICS Turn–On Time Turn–Off Time 2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. ton toff – – 6.0 12 15 15 ns ns RESISTIVE SWITCHING +25 V 23 PULSE GENERATOR 50 Vin 40 pF 1M 20 dB 50 Ω ATTENUATOR TO SAMPLING SCOPE 50 Ω INPUT Vout ton 90% toff 90% 10% 90% 50% 10% PULSE WIDTH 50% 50 OUTPUT Vout INVERTED 10 V INPUT Vin Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2 BS107, BS107A 10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.2 0.1 -55 -35 -15 85 105 65 +5.0 25 45 TJ, JUNCTION TEMPERATURE (°C) 125 145 100 mA 200 180 160 C, CAPACITANCE (pF) VGS = 10 V 250 mA 140 120 100 80 60 40 20 0 0 Crss Coss 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 Ciss VGS = 0 V Figure 3. On Voltage versus Temperature Figure 4. Capacitance Variation 0.8 ID(on) , DRAIN CURRENT (AMPS) VGS = 10 V I D(on) , DRAIN CURRENT (AMPS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 9.0 10 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 10 V 5.0 V 4.0 V 3.0 V 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 18 20 Figure 5. Transfer Characteristic 0.7 ID(on), DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 1.0 2.0 3.0 Figure 6. Output Characteristic 10 V 5.0 V 4.0 V 3.0 V 4.0 5.0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 3 BS107, BS107A ORDERING INFORMATION Device BS107 BS107RLRA BS107RL1 BS107A BS107ARLRM BS107ARLRP BS107ARL1 Package TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 Shipping 1000 Unit/Box 2000 Tape & Reel 2000 Tape & Reel 1000 Units/Box 2000 Ammo Pack 2000 Ammo Pack 2000 Tape & Reel http://onsemi.com 4 BS107, BS107A PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X–X N N DIM A B C D G H J K L N P R V STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE http://onsemi.com 5 BS107, BS107A Notes http://onsemi.com 6 BS107, BS107A Notes http://onsemi.com 7 BS107, BS107A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–german@hibbertco.com French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BS107/D
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