BS170RLRP

BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features http://onsemi.com • Pb−Free Package is Available* MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350 −55 to +150 Unit Vdc Vdc Vpk Adc mW °C 500 mA, 60 Volts RDS(on) = 5.0 W N−Channel D G S Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. 12 3 TO−92 (TO−226) CASE 29 STYLE 30 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source BS170 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 August, 2005 − Rev. 5 Publication Order Number: BS170/D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain−Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) SMALL−SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time (ID = 0.2 Adc) See Figure 1 Turn−Off Time (ID = 0.2 Adc) See Figure 1 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ton toff − − 4.0 4.0 10 10 ns ns Ciss − − 60 pF VGS(Th) rDS(on) ID(off) gfs 0.8 − − − 2.0 1.8 − 200 3.0 5.0 0.5 − Vdc W mA mmhos IGSS V(BR)DSS − 60 0.01 90 10 − nAdc Vdc Symbol Min Typ Max Unit ORDERING INFORMATION Device BS170 BS170G BS170RLRA BS170RLRAG BS170RLRM BS170RLRMG BS170RLRP BS170RLRPG BS170RL1 BS170RL1G BS170ZL1 BS170ZL1G Package TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) Shipping† 1000 Unit/Tube 1000 Unit/Tube 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BS170 RESISTIVE SWITCHING +25 V Vin PULSE GENERATOR 50 W 40 pF 50 W 1.0 MW ton 125 W 20 dB 50 W ATTENUATOR TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplitude 10 Volts) Vin PULSE WIDTH toff 90% 10% 90% 50% Figure 1. Switching Test Circuit Figure 2. Switching Waveforms 2.0 VGS(th), THRESHOLD VOLTAGE 1.6 I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA 2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V 1.2 0.8 0.8 0.4 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (°C) 150 0 1.0 2.0 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4.0 Figure 3. VGS(th) Normalized versus Temperature Figure 4. On−Region Characteristics 2.0 I D(on) , DRAIN CURRENT (AMPS) 1.6 VGS = 10 V 9.0 V 8.0 V C, CAPACITANCE (pF) 100 80 VGS = 0 V 1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 40 60 40 Ciss 20 Coss Crss 0 10 20 30 40 50 60 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristics Figure 6. Capacitance versus Drain−To−Source Voltage http://onsemi.com 3 BS170 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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