BSP16T1G

BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features • Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD PD TJ Value -300 -350 -6.0 -100 1.5 -65 to +150 150 Unit Vdc Vdc Vdc mAdc W °C °C PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM AYW BT2G G 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Symbol RqJA Max 83.3 Unit °C/W TO-223 CASE 318E STYLE 1 1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x 0.059 in; mounting pad for the collector lead min. 0.93 sq. in. A = Assembly Location Y = Year W = Work Week BT2 =Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BSP16T1 BSP16T1G Package TO-223 TO-223 (Pb-Free) Shipping† 1000/Tape & Reel 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 1 June, 2007 - Rev. 6 Publication Order Number: BSP16T1/D BSP16T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -50 mAdc, IB = 0, L = 25 mH) Collector-Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Collector-Emitter Cutoff Current (VCE = -250 Vdc, IB = 0) Collector-Base Cutoff Current (VCB = -280 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -6.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (VCE = -10 Vdc, IC = -50 mAdc) Collector‐Emitter Saturation Voltage (IC = -50 mAdc, IB = -5.0 mAdc) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (VCE = -10 Vdc, IC = -10 mAdc, f = 30 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) fT 15 Cobo 15 pF MHz hFE 30 VCE(sat) -2.0 120 Vdc V(BR)CEO -300 V(BR)CBO -300 ICES ICBO IEBO -20 -1.0 mAdc -50 mAdc mAdc Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 BSP16T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L SCALE 1:1 D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 1 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 1 0° L1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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