BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
• 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V
RDS(ON) = 10Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package
D
D
S
S
G
SOT-23
G
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
0.17
A
– Continuous
(Note 1)
– Pulsed
0.68
Maximum Power Dissipation
PD
(Note 1)
Derate Above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
TL
0.36
2.8
W
mW/°C
−55 to +150
°C
300
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
350
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
SA
BSS123
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
BSS123 Rev G(W)
BSS123
June 2003
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max
Units
Off Characteristics
ID = 250 µA
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA,Referenced to 25°C
VDS = 100 V,
100
V
97
VGS = 0 V
VDS = 100 V,VGS = 0 V TJ = 125°C
IGSS
Gate–Body Leakage.
On Characteristics
mV/°C
1
µA
60
µA
VDS = 20 V,
VGS = 0 V
10
nA
VGS = ±20 V,
VDS = 0 V
±50
nA
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
gFS
VDS = VGS,
ID = 1 mA
0.8
ID = 1 mA,Referenced to 25°C
On–State Drain Current
VGS = 10 V,
ID = 0.17 A
VGS = 4.5 V,
ID = 0.17 A
VGS = 10 V, ID = 0.17 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
0.68
Forward Transconductance
VDS = 10V,
ID = 0.17 A
0.08
VDS = 25 V,
f = 1.0 MHz
V GS = 0 V,
1.7
–2.7
2
1.2
1.3
2.2
6
10
12
V
mV/°C
Ω
A
0.8
S
73
pF
7
pF
3.4
pF
VGS = 15 mV, f = 1.0 MHz
2.2
Ω
VDD = 30 V,
VGS = 10 V,
1.7
3.4
9
18
ns
31
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
17
tf
Turn–Off Fall Time
2.4
5
ns
Qg
Total Gate Charge
1.8
2.5
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 30 V,
VGS = 10 V
ID = 0.28 A,
RGEN = 6 Ω
ID = 0.22 A,
ns
0.2
nC
0.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 0.34 A(Note 2)
IF = 0.17 A,
diF/dt = 100 A/µs
0.8
0.17
A
1.3
V
11
nS
3
nC
NOTE:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
BSS123 Rev G(W)
BSS123
Electrical Characteristics
BSS123
Typical Characteristics
1
1.6
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
6.0V
ID, DRAIN CURRENT (A)
0.8
4.5V
3.0V
2.5V
0.6
0.4
0.2
2.0V
1
2
3
4
1.4
VGS = 2.5V
1.3
1.2
3.0V
1.1
3.5V
0
5
0.2
Figure 1. On-Region Characteristics.
10V
0.4
0.6
0.8
1
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
3.4
ID = 170mA
VGS = 10V
2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
ID = 0.08A
3
TA = 125oC
2.6
2.2
1.8
1.4
TA = 25oC
1
0.4
-50
-25
0
25
50
75
100
125
0
150
2
o
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
IS, REVERSE DRAIN CURRENT (A)
1
VDS = 10V
ID, DRAIN CURRENT (A)
4.5V
1
0.9
0
0
1.5
0.8
0.6
0.4
TA = 125oC
25oC
0.2
-55oC
VGS = 0V
0.1
TA = 125oC
25oC
0.01
-55oC
0.001
0.0001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
BSS123 Rev G(W)
BSS123
Typical Characteristics
100
ID = 0.17A
f = 1 MHz
VGS = 0 V
VDS = 30V
50V
CISS
80
8
70V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
60
40
20
2
COSS
CRSS
0
0
0
0.4
0.8
1.2
1.6
0
2
20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10ms
100ms
1s
10s
DC
0.01
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W
TA = 25oC
0.001
1
10
100
100
1000
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
4
3
2
1
0
0.001
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
80
5
100µs
1ms
0.1
60
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
1
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2
0.1
RθJA = 350 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
BSS123 Rev G(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FASTâ
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrenchâ
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHERâ
OPTOLOGICâ
SMART START
OPTOPLANAR
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogicâ
TruTranslation
UHC
UltraFETâ
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
onsemi:
BSS123_D87Z BSS123_Q