BTB08-600BW3G

BTB08-600BW3G, BTB08-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features •Blocking Voltage to 800 V •On‐State Current Rating of 8 Amperes RMS at 25°C •Uniform Gate Trigger Currents in Three Quadrants •High Immunity to dV/dt - 2000 V/ms minimum at 125°C •Minimizes Snubber Networks for Protection •Industry Standard TO‐220AB Package •High Commutating dI/dt - 4 A/ms minimum at 125°C •These are Pb-Free Devices TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600BW3G BTB08-800BW3G VDRM, VRRM On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 8.0 A ITSM 90 A I2t 36 A2sec VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 Operating Junction Temperature Range TJ Storage Temperature Range Tstg Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Value Unit V 600 800 1 2 BTB08-xBWG AYWW TO-220AB CASE 221A STYLE 4 3 x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 W 3 Gate -40 to +125 °C 4 Main Terminal 2 -40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping BTB08-600BW3G TO-220AB (Pb-Free) 50 Units / Rail BTB08-800BW3G TO-220AB (Pb-Free) 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semicon‐ ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 1 1 Publication Order Number: BTB08-600BW3/D BTB08-600BW3G, BTB08-800BW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol Value Unit RqJC RqJA 2.5 60 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.005 1.0 - - 1.55 2.5 2.5 2.5 - 50 50 50 - - 50 - - 70 90 70 0.5 0.5 0.5 - 1.7 1.1 1.1 0.2 0.2 0.2 - - (dI/dt)c 4.0 - - A/ms Critical Rate of Rise of On-State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt - - 50 A/ms Critical Rate of Rise of Off‐State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 2000 - - V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM/ IRRM mA ON CHARACTERISTICS Peak On‐State Voltage (Note 2) (ITM = ±11 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH Latching Current (VD = 24 V, IG = 60 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT Gate Non-Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 BTB08-600BW3G, BTB08-800BW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 - VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (-) MT2 Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM BTB08-600BW3G, BTB08-800BW3G 125 12 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) DC 120 α = 120, 90, 60, 30° 115 α = 180° 110 DC 105 100 0 1 2 3 4 5 6 IT(RMS), RMS ON‐STATE CURRENT (AMP) 7 10 180° 8 6 60° 4 90° α = 30° 2 0 8 120° 0 100 MAXIMUM @ TJ = 125°C 10 7 8 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1·104 1000 Figure 4. Thermal Response 50 45 MAXIMUM @ TJ = 25°C 1 IH, HOLD CURRENT (mA) I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) TYPICAL AT TJ = 25°C 2 3 4 5 6 IT(RMS), ON‐STATE CURRENT (AMP) Figure 2. On‐State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. RMS Current Derating 1 40 35 MTI2 Positive 30 25 20 MTI2 Negative 15 10 5 -40 -25 -10 5 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) 20 35 50 65 80 95 110 125 4 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Hold Current Variation Figure 3. On‐State Characteristics http://onsemi.com 4 BTB08-600BW3G, BTB08-800BW3G Q3 Q1 10 Q2 VGT, GATE TRIGGER VOLTAGE (V) 2 VD = 12 V RL = 30 W -40 -25 -10 5 20 35 50 65 80 95 VD = 12 V RL = 30 W 1.8 1.6 Q1 1.4 1.2 1 Q3 0.8 Q2 0.6 0.4 -40 -25 -10 5 1 110 125 TJ, JUNCTION TEMPERATURE (°C) 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Variation dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ m s) Figure 7. Typical Gate Trigger Voltage Variation 5000 VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 Figure 8. Critical Rate of Rise of Off‐State Voltage (Exponential Waveform) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON‐POLAR CL TRIGGER CONTROL IGT, GATE TRIGGER VOLTAGE (mA) 100 + 200 V MT2 1N914 51 W MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB08-600BW3G, BTB08-800BW3G PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE AA -TB F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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