BU323Z_09

BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: http://onsemi.com • Integrated High−Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed • Clamping Energy Capability 100% Tested in a Live • • • • Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT−93/TO−218 Type or TO−220 Packages Pb−Free Packages are Available* Over the − 40°C to +125°C Temperature Range 10 AMPERE DARLINGTON AUTOPROTECTED 360 − 450 VOLTS CLAMP, 150 WATTS 360 V CLAMP MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Emitter Voltage Collector Current Base Current − Continuous − Peak − Continuous − Peak Symbol VCEO VEBO IC ICM IB IBM PD TJ, Tstg Max 350 6.0 10 20 3.0 6.0 150 1.0 – 65 to + 175 Unit Vdc Vdc Adc Adc W W/_C _C 1 Symbol RqJC TL Max 1.0 260 Unit _C/W _C A Y WW G BU323Z 4 COLLECTOR 2,4 BASE 1 EMITTER 3 MARKING DIAGRAM Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds 2 3 SOT−93 CASE 340D STYLE 1 AYWW BU323ZG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. = = = = = Assembly Location Year Work Week Pb−Free Package Device Code ORDERING INFORMATION Device BU323Z BU323ZG Package SOT−93 SOT−93 (Pb−Free) Shipping 30 Units / Rail 30 Units / Rail © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 14 1 Publication Order Number: BU323Z/D BU323Z ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage (IC = 7.0 A) (TC = − 40°C to +125°C) Collector−Emitter Cutoff Current (VCE = 200 V, IB = 0) Emitter−Base Leakage Current (VEB = 6.0 Vdc, IC = 0) ON CHARACTERISTICS (1) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) (IC = 8.0 Adc, IB = 0.1 Adc) (IC = 10 Adc, IB = 0.25 Adc) Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Diode Forward Voltage Drop (IF = 10 Adc) DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 6.0 V) CLAMPING ENERGY (see notes) Repetitive Non−Destructive Energy Dissipated at turn−off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4) SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time Storage Time Cross−over Time (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V) tfi tsi tc — — — 625 10 1.7 — 30 — ns μs μs WCLAMP 200 — — mJ fT Cob Cib — — — — — — 2.0 200 550 MHz pF pF (TC = − 40°C to +125°C) VBE(sat) Vdc — — — — — — — 1.1 1.3 — — — — — — — — — — — 2.2 2.5 Vdc 1.6 1.8 1.8 2.1 1.7 Vdc 2.1 2.3 2.5 Vdc — 150 500 — — — 3400 VCLAMP ICEO IEBO 350 — — — — — 450 100 50 Vdc μAdc mAdc Symbol Min Typ Max Unit VCE(sat) (TC = 125°C) (TC = 125°C) VBE(on) (TC = − 40°C to +125°C) VF hFE (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%. http://onsemi.com 2 BU323Z IC INOM = 6.5 A MERCURY CONTACTS WETTED RELAY Output transistor turns on: IC = 40 mA L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 μA VCE VCLAMP NOMINAL = 400 V RBE = 100 Ω IB CURRENT SOURCE VBEoff IB2 SOURCE IC MONITOR 0.1 Ω NON INDUCTIVE 250 V Icer Leakage Current 300 V 340 V Figure 1. IC = f(VCE) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 Ω, Vgate = 280 V, L = 8.0 mH 10 IC, COLLECTOR CURRENT (AMPS) TC = 25°C 10 ms 250 ms 0.1 1 ms 300 μs 1 0.01 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0.001 10 Figure 3. Forward Bias Safe Operating Area http://onsemi.com 3 BU323Z IC ICPEAK IC HIGH IC LOW VCE The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. (a) IC ICPEAK VGATE MIN IC HIGH IC LOW VCE (b) IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE (c) IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE (d) VGATE MIN Figure 4. Energy Test Criteria for BU323Z http://onsemi.com 4 BU323Z 10000 TJ = 125°C 1000 -40°C 100 25°C 10000 TYPICAL hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 TYP - 6Σ TYP + 6Σ 100 VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10000 10 100 VCE = 5 V, TJ = 25°C 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 100000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 7A 5A 8A 10 A IC = 3 A TJ = 25°C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 25°C IC/IB = 150 TJ = 125°C 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Collector Saturation Region Figure 8. Collector−Emitter Saturation Voltage VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 2.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 1.6 1.4 1.2 1.0 0.8 0.1 125°C TJ = 25°C 2.0 VCE = 2 VOLTS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 125°C TJ = 25°C 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 9. Base−Emitter Saturation Voltage Figure 10. Base−Emitter “ON” Voltages http://onsemi.com 5 BU323Z PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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