BUH50G

BUH50G Switch‐mode NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and switch-mode applications. www.onsemi.com Features • Improved Efficiency Due to Low Base Drive Requirements: • • • • POWER TRANSISTOR 4 AMPERES 800 VOLTS, 50 WATTS High and Flat DC Current Gain hFE Fast Switching ON Semiconductor Six Sigma Philosophy Provides Tight and Reproductible Parametric Distributions Specified Dynamic Saturation Data Full Characterization at 125°C These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 2,4 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 500 Vdc Collector−Base Breakdown Voltage VCBO 800 Vdc Collector−Emitter Breakdown Voltage VCES 800 Vdc Emitter−Base Voltage VEBO 9 Vdc IC 4 Adc ICM 8 Adc IB 2 Adc IBM 4 Adc PD 50 0.4 W W/_C TJ, Tstg −65 to 150 _C Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature 3 EMITTER 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. BUH50G AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristics RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C 1 BUH50 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 Device Package Shipping BUH50G TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BUH50/D BUH50G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 500 Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 mAdc Collector Cutoff Current @ TC = 25°C (VCE = Rated VCES, VEB = 0) @ TC = 125°C ICES 100 1000 mAdc Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO 100 mAdc ON CHARACTERISTICS VBE(sat) Base−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc) (IC = 2 Adc, IB = 0.66 Adc) 25°C (IC = 2 Adc, IB = 0.66 Adc) 100°C Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc) @ TC = 25°C Vdc VCE(sat) 0.86 0.94 0.85 1.2 1.6 1.5 0.2 0.5 Vdc (IC = 2 Adc, IB = 0.66 Adc) @ TC = 25°C @ TC = 125°C 0.32 0.29 0.6 0.7 (IC = 3 Adc, IB = 1 Adc) @ TC = 25°C 0.5 1 DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) @ TC = 25°C DC Current Gain (IC = 2 Adc, VCE = 5 Vdc) @ TC = 25°C hFE 7 13 5 10 − − DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) fT 4 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 50 100 pF Input Capacitance (VEB = 8 Vdc) Cib 850 1200 pF VCE(dsat) 1.75 5 V DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 IC = 1 A IB1 = 0.33 A VCC = 300 V IC = 2 A IB1 = 0.66 A VCC = 300 V @ 1 ms @ TC = 25°C @ TC = 125°C @ 3 ms @ TC = 25°C @ TC = 125°C 0.3 0.5 V @ 1 ms @ TC = 25°C @ TC = 125°C 6 14 V @ 3 ms @ TC = 25°C @ TC = 125°C 0.75 4 V SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−on Time Turn−off Time Turn−on Time Turn−off Time Turn−on Time Turn−off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 125 Vdc @ TC = 25°C ton 95 250 ns @ TC = 25°C toff 2.5 3.5 ms IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 125 Vdc @ TC = 25°C ton 110 250 ns @ TC = 25°C toff 0.95 2 ms IC = 1 Adc, IB1 = 0.3 Adc IB2 = 0.3 Adc VCC = 125 Vdc @ TC = 25°C ton 100 200 ns @ TC = 25°C toff 2.9 3.5 ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 Adc IB2 = 1 Adc Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.66 Adc IB2 = 1 Adc @ TC = 25°C @ TC = 125°C tf 80 95 150 ns @ TC = 25°C @ TC = 125°C ts 1.2 1.7 2.5 ms @ TC = 25°C @ TC = 125°C tc 150 180 300 ns @ TC = 25°C @ TC = 125°C tf 90 100 150 ns @ TC = 25°C @ TC = 125°C ts 1.7 2.5 2.75 ms @ TC = 25°C @ TC = 125°C tc 190 220 350 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BUH50G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V TJ = 125°C TJ = 25°C 10 TJ = -40°C 1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = 25°C 10 TJ = -40°C 1 0.01 10 Figure 1. DC Current Gain @ 1 Volt 10 TJ = 25°C VCE , VOLTAGE (VOLTS) IC/IB = 3 4A 3A 1 2A 1A 1 TJ = -40°C TJ = 125°C 0.1 IC = 500 mA 0.1 0.01 TJ = 25°C 0.1 1 IB, BASE CURRENT (mA) 0.01 0.01 10 Figure 3. Collector Saturation Region 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. Collector−Emitter Saturation Voltage 10 10 IC/IB = 3 IC/IB = 5 TJ = -40°C VBE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 Figure 2. DC Current Gain @ 5 Volt 10 VCE , VOLTAGE (VOLTS) 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 0.1 TJ = 25°C 1 TJ = 125°C TJ = -40°C TJ = 25°C TJ = 125°C 0.01 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.01 10 Figure 5. Collector−Emitter Saturation Voltage 1 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base−Emitter Saturation Region www.onsemi.com 3 10 BUH50G TYPICAL STATIC CHARACTERISTICS 10 10000 C, CAPACITANCE (pF) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = 125°C 1 TJ = -40°C TJ = 25°C 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Cib (pF) 1000 TJ = 25°C f(test) = 1 MHz 100 Cob (pF) 10 1 10 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Base−Emitter Saturation Region 100 Figure 8. Capacitance TYPICAL SWITCHING CHARACTERISTICS 3000 4000 TJ = 125°C TJ = 25°C 2500 IBoff = IC/2 VCC = 125 V PW = 20 ms TJ = 125°C TJ = 25°C 3000 IBoff = IC/2 VCC = 125 V PW = 20 ms t, TIME (ns) t, TIME (ns) 2000 IC/IB = 5 1500 2000 IC/IB = 3 1000 1000 500 IC/IB = 3 IC/IB = 5 0 0 1 2 4 3 IC, COLLECTOR CURRENT (AMPS) 5 1 Figure 9. Resistive Switching, ton 5 Figure 10. Resistive Switch Time, toff 300 4000 IC/IB = 3 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 200 t, TIME (ns) 3000 t, TIME (ns) 4 2 3 IC, COLLECTOR CURRENT (AMPS) 2000 tc 100 1000 TJ = 125°C TJ = 25°C 0 1 tfi IC/IB = 5 TJ = 125°C TJ = 25°C 0 2 3 IC, COLLECTOR CURRENT (AMPS) 1 4 3 2 IC, COLLECTOR CURRENT (AMPS) Figure 12. Inductive Storage Time, tc & tfi @ IC/IB = 3 Figure 11. Inductive Storage Time, tsi www.onsemi.com 4 4 BUH50G TYPICAL CHARACTERISTICS 4000 250 TJ = 125°C TJ = 25°C tc t si , STORAGE TIME (μs) t, TIME (ns) 200 150 100 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 50 0 1 3000 IC = 1 A 2000 1000 IC = 2 A tfi 0 3 2 IC, COLLECTOR CURRENT (AMPS) 3 4 5 4 Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5 6 7 hFE, FORCED GAIN 8 9 10 Figure 14. Inductive Storage Time 150 350 130 IC = 1 A 120 t c , CROSSOVER TIME (ns) IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 140 110 100 90 80 70 TJ = 125°C TJ = 25°C 60 50 2 4 IC = 1 A 250 150 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 2 A TJ = 125°C TJ = 25°C IC = 2 A 50 6 hFE, FORCED GAIN 10 8 3 7 hFE, FORCED GAIN 5 Figure 15. Inductive Fall Time SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 9 Figure 16. Inductive Crossover Time 1 POWER DERATING FACTOR t fi , FALL TIME (ns) IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C 100 80 120 60 TC, CASE TEMPERATURE (°C) 140 Figure 17. Forward Power Derating www.onsemi.com 5 160 11 BUH50G There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be de−rated when TC > 25°C. Second breakdown limitations do not de−rate the same as thermal limitations. Allowable current at the voltages shown on Figure 20 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 21). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL CHARACTERISTICS 10 VCE 90% IC IC 9 dyn 1 ms 8 6 0V tfi tsi 7 dyn 3 ms 10% IC 10% Vclamp Vclamp 5 tc 4 IB 90% IB 3 1 ms 2 1 3 ms 0 TIME Figure 18. Dynamic Saturation Voltage 10 1 ms 5 ms 1 DC 1 2 3 4 TIME 5 6 8 7 5 1 ms 10 ms 0 Figure 19. Inductive Switching Measurements EXTENDED SOA 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 90% IB1 IB GAIN ≥ 3 4 3 2 -5 V 1 0V 0.01 TC ≤ 125°C LC = 500 mH -1.5 V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 1000 Figure 20. Forward Bias Safe Operating Area 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 21. Reverse Bias Safe Operating Area www.onsemi.com 6 900 BUH50G TYPICAL CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A 50 W COMMON MJE210 150 W 3W 500 mF IB2 RB2 MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA 1 mF -Voff Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 P(pk) 0.1 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 t, TIME (ms) Figure 22. Typical Thermal Response (ZqJC(t)) for BUH50 www.onsemi.com 7 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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