BUH51G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor The BUH51 has an application specific state−of−art die designed for use in 50 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. http://onsemi.com POWER TRANSISTOR 3.0 AMPERE 800 VOLTS 50 WATTS • Improved Efficiency Due to the Low Base Drive Requirements: • • w High and Flat DC Current Gain hFE Fast Switching Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model, C Human Body Model, 3B This device is available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 500 Vdc Collector−Base Breakdown Voltage VCBO 800 Vdc Collector−Emitter Breakdown Voltage VCES 800 Vdc Emitter−Base Voltage VEBO 10 Vdc IC ICM 3.0 8.0 Adc IB 2.0 4.0 Adc PD 50 0.4 Watt W/_C TJ, Tstg – 65 to 150 _C Collector Current − Continuous − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) *Total Device Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature IBM Thermal Resistance, Junction−to−Case RθJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RθJA 100 _C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds TL 260 _C 2 1 MARKING DIAGRAM 1 BASE 2 COLLECTOR 3 EMITTER Y WW YWW BUH51 = Year = Work Week ORDERING INFORMATION Device BUH51 THERMAL CHARACTERISTICS TO−225 CASE 77 STYLE 3 Package Shipping TO−225 500 Units/Box Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 Publication Order Number: BUH51/D BUH51 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 500 550 − Vdc Collector−Base Breakdown Voltage (ICBO = 1.0 mA) VCBO 800 950 − Vdc Emitter−Base Breakdown Voltage (IEBO = 1.0 mA) VEBO 10 12.5 − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0 ICEO − − 100 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C ICES − − − − 100 1000 mAdc Collector Base Current (VCB = Rated VCBO, VEB = 0 @ TC = 25°C @ TC = 125°C ICBO − − − − 100 1000 mAdc IEBO − − 100 mAdc Emitter−Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) − − 0.92 0.8 1.1 − Vdc Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 25°C @ TC = 125°C VCE(sat) − − 0.3 0.32 0.5 0.6 Vdc DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 25°C @ TC = 125°C hFE 8.0 6.0 10 8.0 − − − DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) @ TC = 25°C @ TC = 125°C 5.0 4.0 7.5 6.2 − − − DC Current Gain (IC = 0.8 Adc, VCE = 5.0 Vdc) @ TC = 25°C @ TC = 125°C 10 8.0 14 13 − − − DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) @ TC = 25°C @ TC = 125°C 14 18 20 25 − − − DYNAMIC SATURATION VOLTAGE VCE(dsat) IC = 1.0 Adc, IB1 = 0.2 Adc VCC = 300 V @ TC = 25°C − 1.7 − V @ TC = 125°C − 6.0 − V IC = 2.0 Adc, IB1 = 0.4 Adc VCC = 300 V @ TC = 25°C − 5.1 − V @ TC = 125°C − 15 − V fT − 23 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 34 100 pF Input Capacitance (VEB = 8.0 Vdc, f = 1.0 MHz) Cib − 200 500 pF Dynamic Saturation Voltage: Determined 3.0 ms after rising IB1 reaches 90% of final IB1 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) http://onsemi.com 2 BUH51 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms) Turn−on Time IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc Turn−off Time Turn−on Time IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc Turn−off Time @ TC = 25°C @ TC = 125°C ton − − 110 125 150 − ns @ TC = 25°C @ TC = 125°C toff − − 3.5 4.1 4.0 − ms @ TC = 25°C @ TC = 125°C ton − − 700 1250 1000 − ns @ TC = 25°C @ TC = 125°C toff − − 1.75 2.1 2.0 − ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc Storage Time Crossover Time Fall Time IC = 2.0 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc Storage Time Crossover Time @ TC = 25°C @ TC = 125°C tfi − − 200 320 300 − ns @ TC = 25°C @ TC = 125°C tsi − − 3.4 4.0 3.75 − ms @ TC = 25°C @ TC = 125°C tc − − 350 640 500 − ns @ TC = 25°C @ TC = 125°C tfi − − 140 300 200 − ns @ TC = 25°C @ TC = 125°C tsi − − 2.3 2.8 2.75 − ms @ TC = 25°C @ TC = 125°C tc − − 400 725 600 − ns TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V TJ = 125°C 10 TJ = −20°C 1 0.001 TJ = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 10 TJ = −20°C 1 0.001 10 Figure 1. DC Current Gain @ 1.0 V TJ = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3.0 V http://onsemi.com 3 10 BUH51 TYPICAL STATIC CHARACTERISTICS 100 10 IC/IB = 5 VCE , VOLTAGE (VOLTS) hFE , DC CURRENT GAIN VCE = 5 V TJ = 125°C 10 TJ = −20°C 1 0.001 TJ = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 1 TJ = 25°C TJ = −20°C 0.1 0.01 0.001 10 Figure 3. DC Current Gain @ 5.0 V 10 Figure 4. Collector−Emitter Saturation Voltage 10 1.5 IC/IB = 5 1 VBE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C TJ = −20°C 1 TJ = −20°C TJ = 25°C 0.5 TJ = 125°C TJ = 125°C 0.1 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 0 0.001 10 Figure 5. Collector−Emitter Saturation Voltage 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. Base−Emitter Saturation Region 1.5 2 IC/IB = 10 TJ = 25°C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 4A 1 TJ = −20°C 0.5 TJ = 25°C TJ = 125°C 0 0.001 1.5 3A 2A 1A 1 0.5 VCE(sat) (IC = 500 mA) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.01 10 Figure 7. Base−Emitter Saturation Region 1 0.1 IB, BASE CURRENT (A) Figure 8. Collector Saturation Region http://onsemi.com 4 10 BUH51 TYPICAL STATIC CHARACTERISTICS 1000 1000 TJ = 25°C 900 Cib BVCER (VOLTS) C, CAPACITANCE (pF) TJ = 25°C f(test) = 1 MHz 100 Cob 10 800 700 600 BVCER @ 10 mA 500 BVCER(sus) @ 200 mA, 25 mH 400 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 9. Capacitance 100 1000 RBE (Ω) 10000 100000 Figure 10. Resistive Breakdown TYPICAL SWITCHING CHARACTERISTICS 2500 10 IB1 = IB2 VCC = 300 V PW = 40 μs 8 IC/IB = 5 6 1500 1000 4 2 500 0 IC/IB = 5 t, TIME (s) μ t, TIME (ns) 2000 IB1 = IB2 VCC = 300 V PW = 40 μs TJ = 125°C TJ = 25°C 0 1 2 IC, COLLECTOR CURRENT (AMPS) 0 3 TJ = 125°C TJ = 25°C 0 Figure 11. Resistive Switching, ton 1 2 IC, COLLECTOR CURRENT (AMPS) 3 Figure 12. Resistive Switch Time, toff 4 7 IC/IB = 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 μH t, TIME (s) μ 3 t, TIME (s) μ 5 IC/IB = 10 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 μH 2 3 1 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 1 0 2 1 IC, COLLECTOR CURRENT (AMPS) 0 3 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) Figure 13 Bis. Inductive Storage Time, tsi Figure 13. Inductive Storage Time, tsi http://onsemi.com 5 2 BUH51 TYPICAL SWITCHING CHARACTERISTICS 1000 800 IB1 = IB2 VCC = 15 V 800 VZ = 300 V LC = 200 μH tc t, TIME (ns) t, TIME (ns) IB1 = IB2 VCC = 15 V VZ = 300 V 600 LC = 200 μH tc 400 tc 600 400 tfi ttfifi 200 200 TJ = 125°C TJ = 25°C 0 0.5 TJ = 125°C TJ = 25°C tfi 1.5 1 2 IC, COLLECTOR CURRENT (AMPS) 0 2.5 0.5 1 1.5 2 IC, COLLECTOR CURRENT (AMPS) Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 4 450 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 μH 3 t fi , FALL TIME (ns) 350 IC = 0.8 A 2 IC = 2 A TJ = 125°C TJ = 25°C 2 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 μH 6 hFE, FORCED GAIN 300 250 200 150 100 0 10 8 800 3 5 4 6 7 hFE, FORCED GAIN IC = 2 A 600 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 μH 500 400 300 200 100 IC = 0.8 A 3 4 IC = 0.8 A 8 Figure 17. Inductive Fall Time TJ = 125°C TJ = 25°C 700 TJ = 125°C TJ = 25°C IC = 2 A 50 Figure 16. Inductive Storage Time t c , CROSSOVER TIME (ns) tsi , STORAGE TIME (μs) 400 1 2.5 5 6 7 hFE, FORCED GAIN 8 9 Figure 18. Inductive Crossover Time http://onsemi.com 6 10 9 10 BUH51 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 9 dyn 1 μs 90% IC IC 8 6 0V tfi tsi 7 dyn 3 μs 10% IC 10% Vclamp Vclamp 5 tc 4 90% IB 3 1 μs 2 1 3 μs IB 90% IB1 IB 0 TIME Figure 19. Dynamic Saturation Voltage Measurements 0 1 2 3 4 TIME 5 6 7 8 Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 μF 150 Ω 3W 100 Ω 3W MTP8P10 VCE PEAK MTP8P10 MPF930 MUR105 VCE RB1 MPF930 +10 V IC PEAK 100 μF IB1 Iout IB A 50 Ω MJE210 COMMON 500 μF 150 Ω 3W IB2 RB2 MTP12N10 1 μF −Voff http://onsemi.com 7 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 μH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 μH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 BUH51 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 80 120 100 60 TC, CASE TEMPERATURE (°C) 140 160 Figure 21. Forward Bias Power Derating Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on 4 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 1 μs 1 ms 1 DC 10 μs 5 ms EXTENDED SOA 0.1 GAIN ≥ 4 3 2 1 −5 V 0V 0.01 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0 1000 Figure 22. Forward Bias Safe Operating Area TC ≤ 125°C LC = 500 μH 200 −1.5 V 300 400 600 700 800 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 23. Reverse Bias Safe Operating Area http://onsemi.com 8 900 BUH51 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 RθJC(t) = r(t) RθJC RθJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 10 1 t, TIME (ms) Figure 24. Typical Thermal Response (ZθJC(t)) for BUH51 http://onsemi.com 9 100 1000 BUH51 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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