BUV22
Switch-mode Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
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40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
250 VOLTS − 250 WATTS
• High DC Current Gain:
hFE min = 20 at IC = 10 A
• Low VCE(sat), VCE(sat)
max = 1.0 V at IC = 10 A
• Very Fast Switching Times:
TF max = 0.35 ms at IC = 20 A
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO(SUS)
250
Vdc
Collector−Base Voltage
VCBO
300
Vdc
Emitter−Base Voltage
VEBO
7
Vdc
Collector−Emitter Voltage (VBE = −1.5 V)
VCEX
300
Vdc
Collector−Emitter Voltage (RBE = 100 W)
VCER
290
Vdc
Collector−Current − Continuous
− Peak (PW v 10 ms)
IC
ICM
40
50
Adc
Apk
Base−Current Continuous
IB
8
Adc
Total Device Dissipation @ TC = 25_C
PD
250
W
TJ, Tstg
−65 to 200
_C
Collector−Emitter Voltage
Operating and Storage Junction
Temperature Range
TO−204AE (TO−3)
CASE 197A
MARKING DIAGRAM
BUV22G
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
qJC
0.7
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BUV22
G
A
Y
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
BUV22
BUV22G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1
Package
Shipping
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
Publication Order Number:
BUV22/D
BUV22
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
250
Max
Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias
(VCE = 300 V, VBE = −1.5 V)
(VCE = 300 V, VBE = −1.5 V, TC = 125_C)
ICEX
Collector−Emitter Cutoff Current
(VCE = 200 V)
ICEO
Emitter−Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter−Cutoff Current
(VEB = 5 V)
IEBO
Vdc
mAdc
3.0
12.0
3.0
7
mAdc
V
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
IS/b
Adc
12
0.15
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 A, VCE = 4 V)
(IC = 20 A, VCE = 4 V)
hFE
20
10
Collector−Emitter Saturation Voltage
(IC = 10 A, IB = 1 A)
(IC = 20 A, IB = 2.5 A)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 40 A, IB = 4 A)
VBE(sat)
60
Vdc
1.0
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT
8.0
MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn−on Time
(IC = 20 A, IB1 = IB2 = 2.5 A,
VCC = 100 V, RC = 5 W)
Storage Time
Fall Time
ton
0.8
ts
2.0
tf
0.35
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
1.0
DERATING FACTOR
0.8
0.6
0.4
0.2
0
40
80
120
TC, TEMPERATURE (°C)
Figure 1. Power Derating
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2
160
200
ms
BUV22
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
IC, COLLECTOR CURRENT (A)
40
10
1
0.1
1
10
100
250
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
50
IC/IB = 8
45
V, VOLTAGE (V)
1.6
40
1.2
VBE
0.8
VCE
VCE = 5 V
35
30
25
20
15
0.4
10
5
0
1
0
0.1
10
IC, COLLECTOR CURRENT (A)
1
Figure 3. “On” Voltages
t, TIME (s)
μ
10
100
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
VCC
3.0
2.0
1.0
tS
0.4
0.3
0.2
ton
RC
IB2
IB1
RB
tF
4
8
12
16
104 mF
100 V
5W
2.7 W
IB2
8
RC − RB: Non inductive resistances
24
20
VCC =
RC =
RB =
IB1 =
IC/IB =
IC, COLLECTOR CURRENT (A)
Figure 6. Switching Times Test Circuit
Figure 5. Resistive Switching Performance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
DATE 21 FEB 2000
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
E
D
−T−
U
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
K
2 PL
0.30 (0.012)
V
SEATING
PLANE
T Q
M
M
Y
M
−Y−
L
2
G
H
B
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
1
GENERIC
MARKING DIAGRAM*
−Q−
0.25 (0.010)
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
T Y
STYLE 2:
PIN 1. EMITTER
2. BASE
CASE: COLLECTOR
M
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
XXXXXX
A
YYWW
STYLE 4:
PIN 1. ANODE = 1
2. ANODE = 2
CASE: CATHODES
XXXXX
A
YY
WW
= Specific Device Code
= Assembly Locationa
= Year
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking.
DOCUMENT NUMBER:
STATUS:
98ASB42128B
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
TO−204 (TO−3)
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1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
2
DOCUMENT NUMBER:
98ASB42128B
PAGE 2 OF 2
ISSUE
K
REVISION
LEGALLY CHANGED TO ON
DATE
21 FEB 2000
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© Semiconductor Components Industries, LLC, 2003
February, 2000 − Rev. 05K
Case Outline Number:
197A
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