BUX85

BUX85G Switch‐mode NPN Silicon Power Transistors The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. www.onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO(sus) 450 Vdc Collector−Emitter Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 5 Vdc IC 2 Adc ICM 3.0 Adc IB 0.75 Adc IBM 1.0 Adc Reverse Base Current − Peak IBM 1 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 50 0.4 W W/_C TJ, Tstg −65 to +150 _C Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2.0 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS, 50 WATTS COLLECTOR 2,4 1 BASE 3 EMITTER 4 TO−220 CASE 221A STYLE 1 1 THERMAL CHARACTERISTICS Characteristics 2 3 MARKING DIAGRAM Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 275 _C BUX85G AY WW BUX85 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 18 1 Device Package Shipping BUX85G TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BUX85/D BUX85G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 − − Vdc − − − − 0.2 1.5 OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, (L = 25 mH) See Figure 1 Collector Cutoff Current (VCES = Rated Value) (VCES = Rated Value, TC = 125_C) ICES mAdc Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO − − 1 mAdc hFE 30 50 − − − − − − 0.8 1 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 Adc, VCE = 5 V) Collector−Emitter Saturation Voltage (IC = 0.3 Adc, IB = 30 mAdc) (IC = 1 Adc, IB = 200 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VBE(sat) − − 1.1 Vdc fT 4 − − MHz ton − 0.3 0.5 ms ts − 2 3.5 ms tf − 0.3 − ms tf − − 1.4 ms DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz) SWITCHING CHARACTERISTICS Turn−on Time Storage Time Fall Time Fall Time VCC = 250 Vdc, IC = 1 A IB1 = 0.2 A, IB2 = 0.4 A See Figure 2 Same above cond. at TC = 95_C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: PW = 300 ms, Duty Cycle ≤2%. www.onsemi.com 2 BUX85G TYPICAL CHARACTERISTICS 100 1 TJ = 25°C VCE = 5 V 150°C hFE, DC CURRENT GAIN 80 70 60 25°C 50 40 −55°C 30 20 10 0 0.001 0.01 1 0.1 IC / IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 90 150°C −55°C 0.01 0.001 10 Figure 2. VCE(sat), Collector Emitter Saturation Voltage 1.0 −55°C 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 IC / IB = 10 0.01 VBE(on), BASE−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1 Figure 1. DC Current Gain 1 0.1 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 VCE = 5 V 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. VBE(sat), Base Emitter Saturation Voltage Figure 4. VBE(on), Base Emitter On Voltage 60 PD, POWER DISSIPATION (W) 10 IC, COLLECTOR CURRENT (A) 0.1 IC, COLLECTOR CURRENT (A) 0.8 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) 1.0 0.9 25°C 0.1 10 ms 1 100 ms 1s 0.1 0.01 1 10 100 50 40 30 20 10 0 1000 0 25 50 75 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Safe Operating Area (SOA) Figure 6. Power Derating www.onsemi.com 3 125 150 BUX85G +6 V L 250 HOR OSCILLOSCOPE 250 IC (mA) 100 VERT ~ 30-60 Hz 4V 0 + 100 W MIN VCEOsust VCEO (V) 1W Figure 1. Test Circuit for VCEOsust tr ≤ 30 ns IBon 90 IB % 10 t IBoff WAVEFORM ICon 90 IC % 10 0 t tf ts ton +25 V BD139 680 mF 250 W 200 W 100 mF T 100 W T.U.T. VIM 30 W tm VI 100 W 50 W BD140 Figure 2. Switching Times/Test Circuit www.onsemi.com 4 680 mF VCC 250 V MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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