CAT25160HU4I-GT3

CAT25080, CAT25160 EEPROM Serial 8/16-Kb SPI Description The CAT25080/25160 are a EEPROM Serial 8/16−Kb SPI devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25080/25160 device. These devices feature software and hardware write protection, including partial as well as full array protection. Features • • • • • • • • • • • • • 20 MHz SPI (5 V) Compatible 1.8 V to 5.5 V Supply Voltage Range SPI Modes (0,0) & (1,1) 32−byte Page Write Buffer Self−timed Write Cycle Hardware and Software Protection Block Write Protection − Protect 1/4, 1/2 or Entire EEPROM Array Low Power CMOS Technology 1,000,000 Program/Erase Cycles 100 Year Data Retention Industrial and Extended Temperature Range 8−lead SOIC, TSSOP and 8−pad, UDFN Packages These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant VCC www.onsemi.com SOIC−8 V SUFFIX CASE 751BD CS CS CAT25080 CAT25160 HOLD SCK VSS SI SOIC (V), TSSOP (Y), UDFN (HU2, HU4) PIN FUNCTION Pin Name† Function CS Chip Select SO Serial Data Output WP Write Protect VSS Ground Serial Data Input VCC HOLD VCC WP HOLD SO 1 SO SCK WP UDFN−8 HU4 SUFFIX CASE 517AZ PIN CONFIGURATION SI SI TSSOP−8 Y SUFFIX CASE 948AL Serial Clock Hold Transmission Input Power Supply †The exposed pad for the UDFN packages can be left floating or connected to Ground. SCK VSS ORDERING INFORMATION Figure 1. Functional Symbol © Semiconductor Components Industries, LLC, 2012 June, 2018 − Rev. 9 See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. 1 Publication Order Number: CAT25080/D CAT25080, CAT25160 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature −45 to +130 °C Storage Temperature −65 to +150 °C −0.5 to VCC + 0.5 V Voltage on any Pin with Respect to Ground (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Parameter Symbol NEND (Note 3) TDR Endurance Min Units 1,000,000 Program / Erase Cycles 100 Years Data Retention 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 3. Page Mode, VCC = 5 V, 25°C. Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C unless otherwise specified.) Symbol ICC Parameter Supply Current Test Conditions Read, Write, VCC = 5.0 V, SO open ISB1 Standby Current VIN = GND or VCC, CS = VCC, WP = VCC, VCC = 5.0 V ISB2 Standby Current VIN = GND or VCC, CS = VCC, WP = GND, VCC = 5.0 V IL ILO Input Leakage Current VIN = GND or VCC Output Leakage Current CS = VCC, VOUT = GND or VCC Min Max Units 10 MHz / −40°C to +85°C 2 mA 5 MHz / −40°C to +125°C 2 mA 2 mA TA = −40°C to +85°C 4 mA TA = −40°C to +125°C 5 mA −2 2 mA TA = −40°C to +85°C −1 1 mA TA = −40°C to +125°C −1 2 mA VIL Input Low Voltage −0.5 0.3 VCC V VIH Input High Voltage 0.7 VCC VCC + 0.5 V VOL1 Output Low Voltage VCC > 2.5 V, IOL = 3.0 mA 0.4 V VOH1 Output High Voltage VCC > 2.5 V, IOH = −1.6 mA VOL2 Output Low Voltage VCC > 1.8 V, IOL = 150 mA VOH2 Output High Voltage VCC > 1.8 V, IOH = −100 mA VCC − 0.8 V V 0.2 VCC − 0.2 V V V Table 4. PIN CAPACITANCE (Note 2) (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V) Test Symbol COUT CIN Conditions Output Capacitance (SO) Input Capacitance (CS, SCK, SI, WP, HOLD) Max Units VOUT = 0 V 8 pF VIN = 0 V 8 pF www.onsemi.com 2 Min Typ CAT25080, CAT25160 Table 5. A.C. CHARACTERISTICS − Mature Product (TA = −40°C to +85°C (Industrial) and TA = −40°C to +125°C (Extended)) (Notes 4, 7) VCC = 2.5 V − 5.5 V VCC = 1.8 V − 5.5 V TA = −405C to +855C Min Max Min Max Units fSCK Clock Frequency DC 5 DC 10 MHz tSU Data Setup Time 40 20 ns tH Data Hold Time 40 20 ns tWH SCK High Time 75 40 ns tWL SCK Low Time 75 40 ns Symbol tLZ Parameter 50 25 ns tRI (Note 5) HOLD to Output Low Z Input Rise Time 2 2 ms tFI (Note 5) Input Fall Time 2 2 ms tHD HOLD Setup Time 0 0 ns tCD HOLD Hold Time 10 10 ns tV Output Valid from Clock Low tHO Output Hold Time tDIS Output Disable Time 75 0 40 0 ns ns 50 20 ns 100 25 ns tHZ HOLD to Output High Z tCS CS High Time 50 20 ns tCSS CS Setup Time 20 15 ns tCSH CS Hold Time 30 20 ns tCNS CS Inactive Setup Time 20 15 ns tCNH CS Inactive Hold Time 20 15 ns tWPS WP Setup Time 10 10 ns tWPH WP Hold Time 100 60 ns tWC (Note 6) Write Cycle Time 5 5 ms 4. AC Test Conditions: Input Pulse Voltages: 0.3 VCC to 0.7 VCC Input rise and fall times: ≤ 10 ns Input and output reference voltages: 0.5 VCC Output load: current source IOL max/IOH max; CL = 50 pF 5. This parameter is tested initially and after a design or process change that affects the parameter. 6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle. 7. All Chip Select (CS) timing parameters are defined relative to the positive clock edge (Figure 2). tCSH timing specification is valid for die revision C and higher. The die revision C is identified by letter “C” or a dedicated marking code on top of the package. For previous product revision (Rev. B) the tCSH is defined relative to the negative clock edge. Table 6. POWER−UP TIMING (Notes 5, 8) Symbol Parameter Max Units tPUR Power−up to Read Operation 1 ms tPUW Power−up to Write Operation 1 ms 8. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. www.onsemi.com 3 CAT25080, CAT25160 Table 7. A.C. CHARACTERISTICS – New Product (Rev D) (TA = −40°C to +85°C (Industrial) and TA = −40°C to +125°C (Extended), unless otherwise specified.) (Note 9) VCC = 1.8 V − 5.5 V −405C to +855C Symbol Parameter VCC = 2.5 V − 5.5 V −405C to +1255C VCC = 4.5 V − 5.5 V −405C to +855C Min Max Min Max Min Max Units 5 DC 10 DC 20 MHz fSCK Clock Frequency DC tSU Data Setup Time 20 10 5 ns tH Data Hold Time 20 10 5 ns tWH SCK High Time 75 40 20 ns tWL SCK Low Time 75 40 20 ns tLZ HOLD to Output Low Z 50 25 25 ns tRI (Note 10) Input Rise Time 2 2 2 ms tFI (Note 10) Input Fall Time 2 2 2 ms tHD HOLD Setup Time 0 0 0 ns tCD HOLD Hold Time 10 10 5 ns tV Output Valid from Clock Low tHO Output Hold Time tDIS Output Disable Time tHZ 70 0 35 0 HOLD to Output High Z 20 0 ns ns 50 20 20 ns 100 25 25 ns tCS CS High Time 80 40 20 ns tCSS CS Setup Time 30 30 15 ns tCSH CS Hold Time 30 30 20 ns tCNS CS Inactive Setup Time 20 20 15 ns tCNH CS Inactive Hold Time 20 20 15 ns tWPS WP Setup Time 10 10 10 ns tWPH WP Hold Time 10 tWC (Note 12) 10 Write Cycle Time 5 10 5 ns 5 ms Min Max Units Table 8. POWER−UP TIMING (Notes 10, 11) Symbol Parameter tPUR Power−up to Read Operation 0.1 1 ms tPUW Power−up to Write Operation 0.1 1 ms 9. AC Test Conditions: Input Pulse Voltages: 0.3 VCC to 0.7 VCC Input rise and fall times: ≤ 10 ns Input and output reference voltages: 0.5 VCC Output load: current source IOL max/IOH max; CL = 30 pF 10. This parameter is tested initially and after a design or process change that affects the parameter. 11. tPUR and tPUW are the delays required from the time VCC is stable at the operating voltage until the specified operation can be initiated. 12. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle. www.onsemi.com 4 CAT25080, CAT25160 Pin Description SI: The serial data input pin accepts op−codes, addresses and data. In SPI modes (0,0) and (1,1) input data is latched on the rising edge of the SCK clock input. SO: The serial data output pin is used to transfer data out of the device. In SPI modes (0,0) and (1,1) data is shifted out on the falling edge of the SCK clock. SCK: The serial clock input pin accepts the clock provided by the host and used for synchronizing communication between host and CAT25080/160. CS: The chip select input pin is used to enable/disable the CAT25080/160. When CS is high, the SO output is tri−stated (high impedance) and the device is in Standby Mode (unless an internal write operation is in progress). Every communication session between host and CAT25080/160 must be preceded by a high to low transition and concluded with a low to high transition of the CS input. WP: The write protect input pin will allow all write operations to the device when held high. When WP pin is tied low and the WPEN bit in the Status Register (refer to Status Register description, later in this Data Sheet) is set to “1”, writing to the Status Register is disabled. HOLD: The HOLD input pin is used to pause transmission between host and CAT25080/160, without having to retransmit the entire sequence at a later time. To pause, HOLD must be taken low and to resume it must be taken back high, with the SCK input low during both transitions. When not used for pausing, the HOLD input should be tied to VCC, either directly or through a resistor. Functional Description The CAT25080/160 devices support the Serial Peripheral Interface (SPI) bus protocol, modes (0,0) and (1,1). The device contains an 8−bit instruction register. The instruction set and associated op−codes are listed in Table 9. Reading data stored in the CAT25080/160 is accomplished by simply providing the READ command and an address. Writing to the CAT25080/160, in addition to a WRITE command, address and data, also requires enabling the device for writing by first setting certain bits in a Status Register, as will be explained later. After a high to low transition on the CS input pin, the CAT25080/160 will accept any one of the six instruction op−codes listed in Table 9 and will ignore all other possible 8−bit combinations. The communication protocol follows the timing from Figure 2. Table 9. INSTRUCTION SET Instruction Opcode Operation WREN 0000 0110 Enable Write Operations WRDI 0000 0100 Disable Write Operations RDSR 0000 0101 Read Status Register WRSR 0000 0001 Write Status Register READ 0000 0011 Read Data from Memory WRITE 0000 0010 Write Data to Memory tCS CS tCSS tCNH tWH tWL tCNS tCSH SCK tSU tH tRI tFI VALID IN SI tV tV tDIS tHO SO HI−Z VALID OUT HI−Z Figure 2. Synchronous Data Timing Status Register Write Enable state and when set to 0, the device is in a Write Disable state. The BP0 and BP1 (Block Protect) bits determine which blocks are currently write protected. They are set by the user with the WRSR command and are non−volatile. The user is allowed to protect a quarter, one half or the entire memory, by setting these bits according to Table 11. The protected blocks then become read−only. The Status Register, as shown in Table 10, contains a number of status and control bits. The RDY (Ready) bit indicates whether the device is busy with a write operation. This bit is automatically set to 1 during an internal write cycle, and reset to 0 when the device is ready to accept commands. For the host, this bit is read only. The WEL (Write Enable Latch) bit is set/reset by the WREN/WRDI commands. When set to 1, the device is in a www.onsemi.com 5 CAT25080, CAT25160 Table 10. STATUS REGISTER 7 6 5 4 3 2 1 0 WPEN 0 0 0 BP1 BP0 WEL RDY Table 11. BLOCK PROTECTION BITS Status Register Bits BP1 BP0 0 0 None No Protection 0 1 25080: 0300−03FF 25160: 0600−07FF Quarter Array Protection 1 0 25080: 0200−03FF 25160: 0400−07FF Half Array Protection 1 1 25080: 0000−03FF 25160: 0000−07FF Full Array Protection Array Address Protected Protection Table 12. WRITE PROTECT CONDITIONS WPEN WP WEL Protected Blocks Unprotected Blocks Status Register 0 X 0 Protected Protected Protected 0 X 1 Protected Writable Writable 1 Low 0 Protected Protected Protected 1 Low 1 Protected Writable Protected X High 0 Protected Protected Protected X High 1 Protected Writable Writable www.onsemi.com 6 CAT25080, CAT25160 WRITE OPERATIONS instruction to the CAT25080/160. Care must be taken to take the CS input high after the WREN instruction, as otherwise the Write Enable Latch will not be properly set. WREN timing is illustrated in Figure 3. The WREN instruction must be sent prior to any WRITE or WRSR instruction. The internal write enable latch is reset by sending the WRDI instruction as shown in Figure 4. Disabling write operations by resetting the WEL bit, will protect the device against inadvertent writes. The CAT25080/160 device powers up into a write disable state. The device contains a Write Enable Latch (WEL) which must be set before attempting to write to the memory array or to the status register. In addition, the address of the memory location(s) to be written must be outside the protected area, as defined by BP0 and BP1 bits from the status register. Write Enable and Write Disable The internal Write Enable Latch and the corresponding Status Register WEL bit are set by sending the WREN CS SCK 0 SI SO 0 0 0 0 1 1 0 HIGH IMPEDANCE Dashed Line = mode (1, 1) Figure 3. WREN Timing CS SCK SI SO 0 0 0 0 0 1 0 HIGH IMPEDANCE Dashed Line = mode (1, 1) Figure 4. WRDI Timing www.onsemi.com 7 0 CAT25080, CAT25160 Byte Write Page Write Once the WEL bit is set, the user may execute a write sequence, by sending a WRITE instruction, a 16−bit address and data as shown in Figure 5. Only 10 significant address bits are used by the CAT25080 and 11 by the CAT25160. The rest are don’t care bits, as shown in Table 13. Internal programming will start after the low to high CS transition. During an internal write cycle, all commands, except for RDSR (Read Status Register) will be ignored. The RDY bit will indicate if the internal write cycle is in progress (RDY high), or the device is ready to accept commands (RDY low). After sending the first data byte to the CAT25080/160, the host may continue sending data, up to a total of 32 bytes, according to timing shown in Figure 6. After each data byte, the lower order address bits are automatically incremented, while the higher order address bits (page address) remain unchanged. If during this process the end of page is exceeded, then loading will “roll over” to the first byte in the page, thus possibly overwriting previously loaded data. Following completion of the write cycle, the CAT25080/160 is automatically returned to the write disable state. Table 13. BYTE ADDRESS Address Significant Bits Address Don’t Care Bits # Address Clock Pulse CAT25080 Device A9 − A0 A15 − A10 16 CAT25160 A10 − A0 A15 − A11 16 CS 0 1 2 3 4 5 6 7 21 8 22 23 24 25 26 27 28 29 30 31 SCK OPCODE SI 0 0 0 0 0 0 DATA IN BYTE ADDRESS* 1 0 A0 D7 D6 D5 D4 D3 D2 D1 D0 AN HIGH IMPEDANCE SO * Please check the Byte Address Table (Table 13) Dashed Line = mode (1, 1) Figure 5. Byte WRITE Timing CS 0 1 2 3 4 5 6 7 8 21 SCK 0 0 0 0 0 0 23 24−31 32−39 24+(N−1)x8−1 .. 24+(N−1)x8 24+Nx8−1 BYTE ADDRESS* OPCODE SI 22 1 0 AN DATA IN A0 Data Data Data Byte 1 Byte 2 Byte 3 HIGH IMPEDANCE SO Dashed Line = mode (1, 1) Data Byte N 7..1 0 * Please check the Byte Address Table (Table 13) Figure 6. Page WRITE Timing www.onsemi.com 8 CAT25080, CAT25160 Write Status Register Write Protection The Status Register is written by sending a WRSR instruction according to timing shown in Figure 7. Only bits 2, 3 and 7 can be written using the WRSR command. The Write Protect (WP) pin can be used to protect the Block Protect bits BP0 and BP1 against being inadvertently altered. When WP is low and the WPEN bit is set to “1”, write operations to the Status Register are inhibited. WP going low while CS is still low will interrupt a write to the status register. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation to the Status Register. The WP pin function is blocked when the WPEN bit is set to “0”. The WP input timing is shown in Figure 8. CS 0 1 2 3 4 5 6 7 8 9 10 11 1 7 6 5 4 12 13 14 15 2 1 0 SCK OPCODE SI 0 0 0 0 0 DATA IN 0 0 MSB HIGH IMPEDANCE SO Dashed Line = mode (1, 1) Figure 7. WRSR Timing tWPS tWPH CS SCK WP WP Dashed Line = mode (1, 1) Figure 8. WP Timing www.onsemi.com 9 3 CAT25080, CAT25160 READ OPERATIONS Read from Memory Array Read Status Register To read from memory, the host sends a READ instruction followed by a 16−bit address (see Table 13 for the number of significant address bits). After receiving the last address bit, the CAT25080/160 will respond by shifting out data on the SO pin (as shown in Figure 9). Sequentially stored data can be read out by simply continuing to run the clock. The internal address pointer is automatically incremented to the next higher address as data is shifted out. After reaching the highest memory address, the address counter “rolls over” to the lowest memory address, and the read cycle can be continued indefinitely. The read operation is terminated by taking CS high. To read the status register, the host simply sends a RDSR command. After receiving the last bit of the command, the CAT25080/160 will shift out the contents of the status register on the SO pin (Figure 10). The status register may be read at any time, including during an internal write cycle. While the internal write cycle is in progress, the RDSR command will output the full content of the status register (New product, Rev. D) or the RDY (Ready) bit only (i.e., data out = FFh) for previous product revision C (Mature product). For easy detection of the internal write cycle completion, both during writing to the memory array and to the status register, we recommend sampling the RDY bit only through the polling routine. After detecting the RDY bit “0”, the next RDSR instruction will always output the expected content of the status register. CS 0 1 2 3 4 5 6 7 8 20 21 10 9 22 23 24 25 26 27 28 29 30 SCK OPCODE SI 0 0 0 0 0 0 BYTE ADDRESS* 1 1 A0 AN DATA OUT HIGH IMPEDANCE SO 7 Dashed Line = mode (1, 1) * Please check the Byte Address Table (Table 13) 6 5 4 3 2 1 0 MSB Figure 9. READ Timing CS 0 1 2 3 4 5 6 7 1 0 1 8 9 10 6 5 11 12 13 14 2 1 SCK OPCODE SI SO 0 0 0 0 0 DATA OUT HIGH IMPEDANCE 7 MSB Dashed Line = mode (1, 1) Figure 10. RDSR Timing www.onsemi.com 10 4 3 0 CAT25080, CAT25160 Hold Operation below the POR trigger level. This bi−directional POR behavior protects the device against ‘brown−out’ failure following a temporary loss of power. The CAT25080/160 device powers up in a write disable state and in a low power standby mode. A WREN instruction must be issued prior to any writes to the device. After power up, the CS pin must be brought low to enter a ready state and receive an instruction. After a successful byte/page write or status register write, the device goes into a write disable mode. The CS input must be set high after the proper number of clock cycles to start the internal write cycle. Access to the memory array during an internal write cycle is ignored and programming is continued. Any invalid op−code will be ignored and the serial output pin (SO) will remain in the high impedance state. The HOLD input can be used to pause communication between host and CAT25080/160. To pause, HOLD must be taken low while SCK is low (Figure 11). During the hold condition the device must remain selected (CS low). During the pause, the data output pin (SO) is tri−stated (high impedance) and SI transitions are ignored. To resume communication, HOLD must be taken high while SCK is low. Design Considerations The CAT25080/160 devices incorporate Power−On Reset (POR) circuitry which protects the internal logic against powering up in the wrong state. The device will power up into Standby mode after VCC exceeds the POR trigger level and will power down into Reset mode when VCC drops CS tCD tCD SCK tHD tHD HOLD tHZ HIGH IMPEDANCE SO tLZ Dashed Line = mode (1, 1) Figure 11. HOLD Timing ORDERING INFORMATION (Notes 13 − 16) Device Order Number Specific Device Marking* Package Type Temperature Range Lead Finish CAT25080HU4I-GT3 S3U UDFN8−EP I = Industrial (−40°C to +85°C) NiPdAu CAT25080VI-GT3 25080D SOIC−8, JEDEC I = Industrial (−40°C to +85°C) NiPdAu CAT25080VE-GT3 25080D SOIC−8, JEDEC E = Extended (−40°C to +125°C) NiPdAu CAT25080YI-GT3 S08D TSSOP−8 I = Industrial (−40°C to +85°C) NiPdAu CAT25080YE-GT3 S08D TSSOP−8 E = Extended (−40°C to +125°C) NiPdAu CAT25160HU4I-GT3 S4U UDFN8−EP I = Industrial (−40°C to +85°C) NiPdAu CAT25160VI-GT3 25160D SOIC−8, JEDEC I = Industrial (−40°C to +85°C) NiPdAu CAT25160VE-GT3 25160D SOIC−8, JEDEC E = Extended (−40°C to +125°C) NiPdAu CAT25160YI-GT3 S16D TSSOP−8 I = Industrial (−40°C to +85°C) NiPdAu Shipping† Tape & Reel, 3,000 Units / Reel Tape & Reel, 3,000 Units / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 13. All packages are RoHS−compliant (Lead−free, Halogen−free). 14. The standard lead finish is NiPdAu. 15. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device Nomenclature document, TND310/D, available at www.onsemi.com 16. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office. 17. Not recommended for new design www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN8, 2x3 EXTENDED PAD CASE 517AZ ISSUE A 1 SCALE 2:1 PIN ONE REFERENCE 0.10 C B A D L1 ÇÇ ÇÇ ÇÇ DETAIL A ALTERNATE CONSTRUCTIONS E EXPOSED Cu DETAIL B A 0.10 C 0.08 C 1 D2 ÉÉ ÉÉ ÇÇ C MOLD CMPD ÉÉÉ ÉÉÉ ÇÇÇ A3 A1 ALTERNATE CONSTRUCTIONS 1 L 4 5 8X e XXXXX A WL Y W G BOTTOM VIEW b 0.10 M C A B 0.05 M C MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 2.00 BSC 1.35 1.45 3.00 BSC 1.25 1.35 0.50 BSC 0.25 0.35 −−− 0.15 GENERIC MARKING DIAGRAM* SEATING PLANE E2 8 DIM A A1 A3 b D D2 E E2 e L L1 DETAIL B A3 A1 SIDE VIEW DETAIL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L 0.10 C TOP VIEW NOTE 4 DATE 23 MAR 2015 XXXXX AWLYWG = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* 1.56 8X 0.68 1.45 3.40 1 8X 0.30 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON42552E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. UDFN8, 2X3 EXTENDED PAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC 8, 150 mils CASE 751BD−01 ISSUE O E1 DATE 19 DEC 2008 E SYMBOL MIN A 1.35 1.75 A1 0.10 0.25 b 0.33 0.51 c 0.19 0.25 D 4.80 5.00 E 5.80 6.20 E1 3.80 4.00 MAX 1.27 BSC e PIN # 1 IDENTIFICATION NOM h 0.25 0.50 L 0.40 1.27 θ 0º 8º TOP VIEW D h A1 A θ c e b SIDE VIEW L END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MS-012. DOCUMENT NUMBER: DESCRIPTION: 98AON34272E SOIC 8, 150 MILS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP8, 4.4x3.0, 0.65P CASE 948AL ISSUE A DATE 20 MAY 2022 q q GENERIC MARKING DIAGRAM* XXX YWW AG XXX Y WW A G = Specific Device Code = Year = Work Week = Assembly Location = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON34428E TSSOP8, 4.4X3.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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