DTC115EM3T5G

MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS XX MG G SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current − Continuous PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2019 − Rev. 5 1 Publication Order Number: DTC115E/D MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† 8N SC−59 (Pb−Free) 3000 / Tape & Reel AA5 SOT−23 (Pb−Free) 3000 / Tape & Reel MUN5236T1G, NSVMUN5236T1G* 8N SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel DTC115EET1G 8N SC−75 (Pb−Free) 3000 / Tape & Reel DTC115EM3T5G 8N SOT−723 (Pb−Free) 8000 / Tape & Reel Device MUN2236T1G, NSVMUN2236T1G* MMUN2236LT1G, NSVMMUN2236LT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−723; Minimum Pad 200 150 (1) (2) (3) (4) 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2236) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2236L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5236) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTC115EE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range PD mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW THERMAL CHARACTERISTICS (SOT−723) (DTC115EM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. www.onsemi.com 3 PD mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.05 50 − − 50 − − 80 150 − − − 0.25 − 1.2 0.5 3.0 1.7 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 1.0 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH Input Resistor R1 70 100 130 Resistor Ratio R1/R2 0.8 1.0 1.2 Vdc Vdc Vdc Vdc Vdc kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 1000 1 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS MUN2236, MMUN2236L, MUN5236, NSVMUN5236, DTC115EE, DTC115EM3 25°C 75°C 0.1 0.01 75°C TA = −25°C 100 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 2. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) TA = −25°C 10 25°C 1 0.1 50 75°C VO = 5 V 0 Figure 4. Output Capacitance VO = 0.2 V 5 10 15 20 25 30 Vin, INPUT VOLTAGE (V) 25°C TA = −25°C 75°C 10 1 0.1 0 5 35 Figure 5. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) f = 10 kHz lE = 0 A TA = 25°C 2.8 100 Figure 3. DC Current Gain 3.6 3.2 25°C 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 Figure 6. Input Voltage versus Output Current www.onsemi.com 5 35 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H DATE 28 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 C A MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 XXX MG G SOLDERING FOOTPRINT* 1 0.95 0.037 0.95 0.037 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 GENERIC MARKING DIAGRAM L A1 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 XXX M G = Specific Device Code = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42664B SC−59 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. N.C. 3. ANODE STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE/CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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