ECH8308-TL-H

Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET http://onsemi.com –12V, –10A, 12.5mΩ, Single ECH8 Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% --12 V ±10 V --10 A --40 A 1.6 W 150 °C --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8308-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 JK 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7 ECH8308 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V --12 VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A --0.4 12 ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V max Unit V --10 μA ±10 μA --1.3 21 V S 9.2 12.5 mΩ 14 20 mΩ 22 33 mΩ 2300 pF 720 pF Crss 550 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 130 ns Turn-OFF Delay Time td(off) 230 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--10A 195 ns 26 nC 4.0 nC 7.1 IS=--10A, VGS=0V --0.79 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --5A RL=1.2Ω VOUT VIN D PW=10μs D.C.≤1% G ECH8308 P.G 50Ω S Ordering Information Device ECH8308-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1182-2/7 ECH8308 ID -- VDS --2 VGS= --1.2V --4 --2 --1 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --5A 25 20 15 10 5 --1 --2 --3 --4 --5 --6 --7 --8 3 2 C 5° --2 = °C Ta 75 °C 25 1.0 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 --1.8 IT13602 --3A V, I D= --2.5 V GS= 15 = --5A 4.5V, I D V GS= -- 10 5 --40 --20 100 120 140 160 IT13604 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT13606 Ciss, Coss, Crss -- VDS f=1MHz Ciss, Coss, Crss -- pF 2 tf 100 tr 3 Ciss 2 1000 Coss 7 Crss 5 td(on) 3 80 5 td(off) 5 60 VGS=0V 7 5 7 40 Diode Forward Voltage, VSD -- V 7 3 20 IS -- VSD 0 VDD= --6V VGS= --4.5V 1000 0 --10 7 5 3 2 5 7 --10 IT13605 SW Time -- ID 2 --1.6 Ta= 7 2 2 10 --0.01 20 --0.01 7 5 3 2 --0.001 3 0.1 --0.01 --1.4 = --1A V, I D .8 1 -VGS= 25 3 2 VDS= --6V 2 --1.2 Ambient Temperature, Ta -- °C ⏐yfs⏐ -- ID 7 5 3 --1.0 30 IT13603 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S Gate-to-Source Voltage, VGS -- V 10 7 5 --0.8 RDS(on) -- Ta 0 --60 0 0 --0.6 Gate-to-Source Voltage, VGS -- V 35 --3A 30 --0.4 Ta=25°C ID= --1A 35 --0.2 IT13601 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 5°C 25°C --25° C --0.1 0 Switching Time, SW Time -- ns 25° C --3 --6 °C --4 --8 --25 --5 75 °C --6 --10 Ta = --7 --12 --4.5V Drain Current, ID -- A --8 VDS= --6V --1.5V Drain Current, ID -- A --9 ID -- VGS --14 --2.5V --3.5V -1.8V --8.0V --10 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 3 IT13607 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT13608 No. A1182-3/7 ECH8308 VGS -- Qg 7 5 VDS= --6V ID= --10A --4.0 IDP= --40A PW≤10μs 3 1m 2 3 2 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC 22 24 26 IT13609 PD -- Ta 1.8 ) °C 25 2 0 Operation in this area is limited by RDS(on). --1.0 7 5 3 s a= (T --1.0 0m n --1.5 10 io at er --2.0 s m --2.5 s ID= --10A 10 --3.0 --10 7 5 op Drain Current, ID -- A --3.5 --0.5 Allowable Power Dissipation, PD -- W ASO C D Gate-to-Source Voltage, VGS -- V --4.5 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13610 Drain-to-Source Voltage, VDS -- V When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13611 No. A1182-4/7 ECH8308 Embossed Taping Specification ECH8308-TL-H No. A1182-5/7 ECH8308 Outline Drawing ECH8308-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1182-6/7 ECH8308 Note on usage : Since the ECH8308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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