EMH2308-TL-E

Ordering number : ENA1445A EMH2308 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Unit --20 V ±10 V --3 A --20 A 1.0 W Total Dissipation PD PT 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7045-002 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2308-TL-H Packing Type : TL 5 Marking MH 2.1 1.7 8 TL 1 Lot No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 71112 TKIM/41509PE MSIM TC-00001891 No. A1445-1/7 EMH2308 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.0A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 2.1 --1 μA ±10 μA --1.3 3.6 V S 65 85 mΩ 98 137 mΩ 155 235 mΩ 320 pF 66 pF Crss 50 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 21 ns 37 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V 32 ns 4.0 nC 0.6 nC 1.1 nC --0.83 --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --1.5A RL=6.67Ω VIN D PW=10μs D.C.≤1% VOUT G EMH2308 P.G 50Ω S Ordering Information Device EMH2308-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1445-2/7 EMH2308 ID -- VDS --2.0 .8 V --5.0 --4.5 --1 --8V --3.5 V --2.5 V --2.5 --10V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A --1A 120 --3A 90 60 30 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V C 25 °C --1.0A , I D= V 5 . 2 = -VGS .0A I = --3 --4.5V, D = V GS 120 100 80 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT14536 IS -- VSD 7 5 VGS=0V 2 3 2 = Ta 5 --2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 140 3 °C °C 75 1.0 °C 25 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --0.5 --0.6 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 --0.01 --0.3 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 10 td(on) 7 --0.9 --1.0 --1.1 IT14538 f=1MHz 5 Ciss 3 7 --0.8 Ciss, Coss, Crss -- VDS 7 2 100 --0.7 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4.5V 3 --0.4 IT14537 SW Time -- ID 5 Switching Time, SW Time -- ns = VGS = --0 V, I D --1.8 Ambient Temperature, Ta -- °C 5 0.1 --0.01 160 0 --60 --40 --8 VDS= --10V 7 .5A 180 IT14535 | yfs | -- ID 10 200 25° C --2 5°C 0 220 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 IT14534 RDS(on) -- Ta 240 210 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 150 0 IT14533 RDS(on) -- VGS 240 --1.5 --0.5 VGS= --1.2V --0.1 --2.0 --1.0 --0.5 0 --2.5 --25 ° --1.5V --3.0 75° C --1.0 --3.5 Ta= Drain Current, ID -- A V --1.5 0 ID -- VGS VDS= --10V --4.0 --4. 5 Drain Current, ID -- A --3.0 2 100 Coss Crss 7 5 5 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14539 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14540 No. A1445-3/7 EMH2308 VGS -- Qg --4.0 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 PD -- Ta 1.4 4.0 4.5 IT14541 PW≤10μs ID= --3A 10 0μ 1m s s 10 DC op ms 10 0m s era tio n( Ta = 3 2 --0.5 0 IDP= --20A --1.0 7 5 --1.0 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W --10 7 5 3 2 --0.1 7 5 0 ASO 5 VDS= --10V ID= --3A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14542 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 To t 0.8 al 0.6 1u di ss ni t ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14543 No. A1445-4/7 EMH2308 Embossed Taping Specification EMH2308-TL-H No. A1445-5/7 EMH2308 Outline Drawing EMH2308-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1445-6/7 EMH2308 Note on usage : Since the EMH2308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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