EMI2180MTTBG

EMI2180 Common Mode Filter with ESD Protection Functional Description The EMI2180 is an industry first Common Mode Filter tuned to MHL speed (CMF) with integrated ESD protection. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package, instead of using separate devices for each function. In addition, traditional common mode chokes are coil−based, while the EMI2180 is silicon−based. This enables the EMI2180 to have a smaller footprint and profile. The EMI2180 protects against ESD pulses up to ±15 kV contact per the IEC61000−4−2 standard. The EMI2180 is particularly well−suited for protecting systems using high−speed differential ports such as MHL, MHL to USB interface corresponding ports in removable storage, digital camcorders, DVD−RW drives; and other applications where ESD protection are required in a small footprint package. The EMI2180 is available in a RoHS−compliant, WDFN-8 package. http://onsemi.com MARKING DIAGRAM 6 1 2M MG G 1 WDFN6 CASE 511BV 2M = Specific Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) Features PIN CONNECTIONS • Single Integrated Package for Common Mode Filter (CMF) and ESD Protection for MHL High Speed Data Lines • High Differential Mode Bandwidth Cutoff Frequency for Best Signal • • • • Integrity Low Profile with Small Footprint in WDFN6 1.6 x 2.0 mm Package Provides ESD Protection to IEC61000−4−2 Level 4, ±15 kV Contact Discharge Low Channel Input Capacitance These Devices are Pb−Free and are RoHS Compliant In 1+ 1 In 1− 2 NC 3 GND PAD 6 Out 1+ 5 Out 1− 4 VCC (Top View) Applications • I/O Ports, Display, MHL in Mobile Phones, Wireless Handsets and Cameras ORDERING INFORMATION • MHL to USB Interface • High−Speed Differential Data Lines 1 6 2 5 Device Package Shipping† EMI2180MTTBG WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 4 Figure 1. EMI2180 Electrical Schematic © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 2 1 Publication Order Number: EMI2180/D EMI2180 PIN FUNCTION DESCRIPTION Pin Name Pin No. Type MHL_In+ 1 I/O CMF Channel 1+ to Connector (External) MHL_In− 2 I/O CMF Channel 1− to Connector (External) MHL_Out+ 6 I/O CMF Channel 1+ to ASIC (Internal) MHL_Out− 5 I/O CMF Channel 1− to ASIC (Internal) VCC 4 VCC NC 3 NC GND Belly Pad GND Description Supply Protection (External) No Connect GND ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Operating Temperature Range Top −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C DC Voltage at any channel input Vdc −0.5 to 5.5 V ESD Discharge IEC61000−4−2 Contact Discharge VPP ±15 kV Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com 2 EMI2180 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit 1.0 mA 1.5 V 1.3 pF ILEAK Channel Leakage Current TA = 25°C, VIN = 5 V, VN = 0 V VF Channel Negative Voltage IF = 10 mA, TA = 25°C CID Channel ID Capacitance (Pin 4 to GND) TA = 25°C, At 1 MHz, VN = 0 V 0.8 CIN Channel Input Capacitance (Pins 1, 2 to GND) TA = 25°C, At 1 MHz, VN = 0 V 2.0 RCH Channel Resistance (Pins 1−6 and 2−5) TA = 25°C, At 1 MHz, VN = 0 V 3.5 f3dB Differential Mode (Sdd21) Cut−off Frequency 50 W Source and Load Termination 4.0 GHz Common Mode (Scc21) Stop Band Attenuation @ 75 MHz 3 dB @ 500 MHz 10 dB @ 1 GHz ~ 3 GHz 15 dB up to 6 GHz 40 fATTN fATTN Mode−to−Mode Conversion (Sdc21, Scd21) VESD In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2 standard, Level 1 (Internal Pins) VRWM VBR 0.1 (Notes 1 and 2) pF 5.0 35 W dB kV ±15 ±12 Reverse Working Voltage (Note 3) Breakdown Voltage IT = 1 mA, (Note 4) 5.6 5.0 V 9.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, VN grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level 4. VBR is measured at pulse test current IT. TYPICAL CHARACTERISTICS 0 0 −1 −5 −2 −10 −15 −4 dB dB −3 −5 −20 −25 −6 −7 −30 −8 −35 −9 1E6 −40 1E7 1E8 FREQUENCY (Hz) 1E9 1E6 1E10 Figure 2. Differential Mode Attenuation vs. Frequency 1E7 1E8 1E9 FREQUENCY (Hz) Figure 3. Common Mode Attenuation vs. Frequency http://onsemi.com 3 1E10 EMI2180 TRANSMISSION LINE PULSE (TLP) MEASUREMENTS Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 4. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 5 where an 8 kV IEC61000−4−2 current waveform is compared with TLP current pulses at 8 and 16 A. A TLP curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves for the EMI2180 are shown in Figure 6. Attenuator L SW 50 W Coax Cable 50 W Coax Cable ÷ IM VM 10 MW VC DUT Oscilloscope Figure 4. Simplified Schematic of a Typical TLP System Figure 5. Comparison Between 8 kV IEC61000−4−2 and 8 A and 16 A TLP Waveforms Figure 6. Positive and Negative TLP Waveforms http://onsemi.com 4 EMI2180 ESD VOLTAGE CLAMPING For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to On Semiconductor Application Notes AND8307/D and AND8308/D. IEC61000−4−2 Waveform IEC61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Oscilloscope TVS 50 W Cable 50 W Figure 7. Diagram of ESD Test Setup 100 % OF PEAK PULSE CURRENT ESD Gun PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 8. 8 x 20 ms Pulse Waveform http://onsemi.com 5 80 EMI2180 Figure 9. ESD Clamping Voltage +8 kV per IEC6100−4−2 (external to internal pin) Figure 10. ESD Clamping Voltage −8 kV per IEC6100−4−2 (external to internal pin) http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.6x2.0, 0.5P CASE 511BV ISSUE O 6 DATE 17 MAY 2012 1 SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C L L1 ÉÉ ÉÉ DETAIL A OPTIONAL CONSTRUCTIONS E MOLD CMPD EXPOSED Cu TOP VIEW DETAIL B (A3) 0.05 C A A1 ÇÇÇ ÉÉÉ DETAIL B OPTIONAL CONSTRUCTION 0.05 C NOTE 4 C SIDE VIEW A1 D2 DETAIL A 1 6X 3 SEATING PLANE 6 4 6X 0.10 C A B 0.05 C BOTTOM VIEW MILLIMETERS MIN MAX 0.60 0.80 0.00 0.05 0.20 REF 0.20 0.40 1.60 BSC 1.10 1.30 2.00 BSC 0.95 1.15 0.50 BSC 0.20 −−− 0.15 0.35 −−− 0.10 GENERIC MARKING DIAGRAM* XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) b e A3 DIM A A1 A3 b D D2 E E2 e K L L1 1 L E2 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L NOTE 3 RECOMMENDED MOUNTING FOOTPRINT *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 1.30 6X 0.43 1.15 2.30 1 6X 0.36 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON80928E WDFN6, 1.6X2.0, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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