EMI8141MUTAG

EMI8141, EMI8142, EMI8143 Common Mode Filter with ESD Protection Functional Description The EMI814x is a family of Common Mode Filters (CMF) with integrated ESD protection, a first in the industry. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package. The EMI814x protects against ESD pulses up to ±15 kV contact per the IEC61000−4−2 standard. The EMI814x is well−suited for protecting systems using high−speed differential ports such as USB 3.0, MIPI D−PHY; corresponding ports in removable storage, and other applications where ESD protection are required in a small footprint package. The EMI814x is available in a RoHS−compliant, XDFN6 for 1 Differential Pair, XDFN−10 for 2 Differential Pair and XDFN−16 package for 3 Differential Pair. Features • Total Insertion Loss DMLOSS < 2.5 dB at 2.5 GHz • Large Differential Mode Cutoff Frequency f3dB > 5 GHz • High Common Mode Stop Band Attenuation: http://onsemi.com XDFN6 CASE 711AV XDFN10 CASE 711AU XDFN16 CASE 711AW MARKING DIAGRAMS 4A M G 1 42 M G 43 M G 1 1 XX = Specific Device Code M = Date Code G = Pb−Free Package ELECTRICAL SCHEMATICS > 10 dB at 500 MHz , 15 dB at 700 MHz • Low Channel Resistance 6.0 W • Provides ESD Protection to IEC61000−4−2 Level 4, ±15 kV Contact • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant EMI8142 Applications • • • • • • USB 3.0 MHL 2.0 mSD Card eSATA HDMI/DVI Display in Mobile Phones MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still Cameras EMI8143 ORDERING INFORMATION Figure 1. EMI8141 Electrical Schematic Shipping† Device Package EMI8141MUTAG XDFN6 3000 / Tape & Reel EMI8142MUTAG XDFN10 3000 / Tape & Reel EMI8143MUTAG XDFN16 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 0 1 Publication Order Number: EMI8141/D EMI8141, EMI8142, EMI8143 PIN FUNCTION DESCRIPTION Device Pin Pin Name EMI8141 EMI8142 EMI8143 Type In_1+ 1 1 1 I/O CMF Channel 1+ to Connector (External) In_1− 2 2 2 I/O CMF Channel 1− to Connector (External) Out_1+ 6 10 16 I/O CMF Channel 1+ to ASIC (Internal) Out_1− 5 9 15 I/O CMF Channel 1− to ASIC (Internal) In_2+ NA 4 4 I/O CMF Channel 2+ to Connector (External) In_2− NA 5 5 I/O CMF Channel 2− to Connector (External) Out_2+ NA 7 13 I/O CMF Channel 2+ to ASIC (Internal) Out_2− NA 6 12 I/O CMF Channel 2− to ASIC (Internal) In_3+ NA NA 7 I/O CMF Channel 3+ to Connector (External) In_3− NA NA 8 I/O CMF Channel 3− to Connector (External) Out_3+ NA NA 10 I/O CMF Channel 3+ to ASIC (Internal) Out_3− NA NA 9 I/O CMF Channel 3− to ASIC (Internal) VN 3,4 3, 8 3,6,14,11 GND Description Ground ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Operating Temperature Range TOP −40 to +85 °C Storage Temperature Range TSTG −65 to +150 °C TL 260 °C ILINE 100 mA Parameter Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds) DC Current per Line Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com 2 EMI8141, EMI8142, EMI8143 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol VRWM Parameter Test Conditions Reverse Working Voltage VBR Breakdown Voltage ILEAK Channel Leakage Current RCH Channel Resistance (Pins 1−6, 2−5) − EMI8141 (Pins 1−10, 2−9, 4−7 and 5−6) − EMI8142 (Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8143 IT = 1 mA; (Note 4) Differential Mode Cut-off Frequency Fatten Common Mode Stop Band Attenuation VESD In-system ESD Withstand Voltage a) Contact discharge per IEC 61000-4-2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000-4-2 standard, Level 1 (Internal Pins) VCL Typ Max 3.3 4.0 TA = 25°C, VIN = 3.3 V, GND = 0 V Unit V 9.0 V 1.0 mA 6.0 W @ 2.5 GHz 2.5 dB 50 W Source and Load Termination 5.0 GHz @ 700 MHz 15 dB DMLOSS Differential Mode Insertion Loss f3dB Min (Note 3) (Notes 1 and 2) kV ±15 ±2 TLP Clamping Voltage Forward IPP = 8 A Forward IPP = 16 A Forward IPP = −8 A Forward IPP = −16 A 7.26 11.8 −3.5 −6.7 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT. http://onsemi.com 3 EMI8141, EMI8142, EMI8143 TYPICAL CHARACTERISTICS 0 0 −5 m1 −2 −10 −3 −15 dB (SCC21) dB (SDD21) −1 −4 −5 −6 −20 −25 −30 −7 −35 −8 −40 −9 −45 −50 −10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 FREQUENCY (Hz) FREQUENCY (Hz) Figure 2. Typical Differential Mode Attenuation vs. Frequency Figure 3. Typical Common Mode Attenuation vs. Frequency Interface Data Rate (Gb/s) Fundamental Frequency (GHz) ESD814x Insertion Loss (dB) USB 3.0 5 2.5 (m1) m1 = 2.13 http://onsemi.com 4 EMI8141, EMI8142, EMI8143 TRANSMISSION LINE PULSE (TLP) MEASUREMENTS Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 4. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 5 where an 8 kV IEC61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves for the EMI814x are shown in Figure 4. L SW Attenuator 50 W Coax Cable ÷ 50 W Coax Cable IM VM 10 MQ DUT VC Oscilloscope Figure 4. Simplified Schematic of a Typical TLP System 18 −18 16 −16 14 −14 12 −12 10 −10 I (A) I (A) Figure 5. Comparison Between 8 kV IEC61000-4-2 and 8 A and 16 A TLP Waveforms 8 −8 6 −6 4 −4 2 −2 0 0 0 2 4 6 8 10 Vclamp (V) 12 14 16 18 0 −2 −4 −6 Figure 6. Positive and Negative TLP Waveforms http://onsemi.com 5 −8 −10 Vclamp (V) −12 −14 −16 −18 EMI8141, EMI8142, EMI8143 Pattern Generator (5 Gbps, PRBS31 Pattern) 50 GHz Sampling Oscilloscope ONsemi high speed test board (Rogers 4003 Material, Southwest Microwave 2.4mm Connectors) Figure 7. Eye Diagram Test Setup for 5Gbps Data Rate Figure 8. Eye Diagram 5Gbps with and without EMI814x Eye Height (mVppd) Rise Time (ps) Fall Time (ps) Jrms (ps) Jpp (ps) Reference (No Device)-Left Figure 724 30.4 29.6 1.997 9.6 EMI814x Right Figure 405 60 60.8 3.484 16 http://onsemi.com 6 EMI8141, EMI8142, EMI8143 PACKAGE DIMENSIONS XDFN6 1.40x1.35, 0.4P CASE 711AV ISSUE A PIN 1 REFERENCE 0.10 C 2X 2X ÇÇ ÇÇ E L1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. DETAIL A DIM A A1 A3 b D E e L L1 ALTERNATE TERMINAL CONSTRUCTIONS 0.10 C TOP VIEW ÉÉ ÉÉ ÇÇ EXPOSED Cu A DETAIL B L L A B D (A3) A1 0.10 C 6X MOLD CMPD DETAIL B 0.08 C C SIDE VIEW e 6X 1 3 6 4 ALTERNATE CONSTRUCTION SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT 0.40 PITCH L MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 1.40 BSC 1.35 BSC 0.40 BSC 0.40 0.60 --0.15 6X 0.65 DETAIL A 1.55 BOTTOM VIEW 6X 1 b 0.10 M C A B 0.05 M C 0.50 5X 0.25 NOTE 3 DIMENSIONS: MILLIMETERS http://onsemi.com 7 EMI8141, EMI8142, EMI8143 PACKAGE DIMENSIONS XDFN10 2.2x1.35, 0.4P CASE 711AU ISSUE B A B D PIN ONE REFERENCE 0.10 C 2X 2X ÇÇ ÇÇ 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. L L L1 E DETAIL A DIM A A1 A3 b D E e L L1 ALTERNATE CONSTRUCTIONS TOP VIEW DETAIL B ÉÉ ÇÇ EXPOSED Cu A (A3) 0.10 C 0.08 C MOLD CMPD MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 2.20 BSC 1.35 BSC 0.40 BSC 0.40 0.60 --0.15 DETAIL B SIDE VIEW A1 C SEATING PLANE ALTERNATE CONSTRUCTION RECOMMENDED MOUNTING FOOTPRINT DETAIL A e 1 5 10 9X 8X 8X 0.25 0.65 L 1.55 6 10X BOTTOM VIEW PACKAGE OUTLINE b 0.10 M C A B 0.05 M C 1 0.50 NOTE 3 0.40 PITCH DIMENSIONS: MILLIMETERS http://onsemi.com 8 EMI8141, EMI8142, EMI8143 PACKAGE DIMENSIONS XDFN16 3.5x1.35, 0.4P CASE 711AW ISSUE A A B D 2X 0.10 C PIN ONE REFERENCE 2X L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. L1 ÉÉÉÉ ÉÉÉÉ 0.10 C L DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÉÉÉ ÉÉÉ ÇÇÇ TOP VIEW EXPOSED Cu DETAIL B (A3) 0.10 C A MOLD CMPD DETAIL B 16X ALTERNATE CONSTRUCTION 0.08 C NOTE 4 A1 SIDE VIEW C SEATING PLANE e 0.40 PITCH L 12X MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 3.50 BSC 1.35 BSC 0.40 BSC 0.40 0.60 −−− 0.15 RECOMMENDED SOLDERING FOOTPRINT* e/2 DETAIL A DIM A A1 A3 b D E e L L1 12X 0.65 8 1 1.55 1 16 9 16X b 0.55 0.10 C A B BOTTOM VIEW 0.05 C 15X 0.25 DIMENSIONS: MILLIMETERS NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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