ES1B

ES1A - ES1D ES1A - ES1D Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120°C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 °C Operating Junction Temperature -50 to +150 °C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Parameter Symbol Value Units PD Power Dissipation 1.47 W RθJA Thermal Resistance, Junction to Ambient* 85 °C/W RθJL Thermal Resistance, Junction to Lead* 35 °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 1A VF Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR IR CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 2010 Semiconductor Components Industries, LLC. October-2017, Rev. 3 TA = 25°C TA = 100°C 1B 1C Units 1D 0.92 V 15 ns 5.0 100 µA µA pF 7.0 Publication Order Number: ES1A/D ES1A - ES1D 10 1.5 1.25 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 1 0.75 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.5 0.25 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 0.1 0.01 TA = 25º C Pulse Width = 300µ µs 2% Duty Cycle 0.001 0.4 175 Figure 1. Forward Current Derating Curve 0.6 0.8 1 1.2 Forward Voltage, VF [V] 1.4 Figure 2. Forward Voltage Characteristics 1000 30 25 Reverse Current, IR [uA] Peak Forward Surge Current, IFSM [A] 1 20 15 10 5 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 100 T A = 125 º C 10 TA = 75º C 1 T A = 25º C 0.1 0 60 80 100 120 140 20 40 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, C T [pF] 14 12 10 8 6 4 2 0 0.1 1 10 Reverse Voltage, V R [V] 100 Figure 5. Total Capacitance 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram www.onsemi.com 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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