ES3A

ES3A - ES3J Fast Rectifiers Features • • • • • • For Surface Mount Applications Glass-Passivated Junction Low-Profile Package Easy Pick and Place Built-in Strain Relief Superfast Recovery Times for High Efficiency SMC/DO-214AB COLOR BAND DENOTES CATHODE Ordering Information Part Number Top Mark Package Packing Method ES3A ES3A DO-214AB (SMC) Tape and Reel ES3B ES3B DO-214AB (SMC) Tape and Reel ES3C ES3C DO-214AB (SMC) Tape and Reel ES3D ES3D DO-214AB (SMC) Tape and Reel ES3J ES3J DO-214AB (SMC) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value ES3A ES3B ES3C ES3D ES3J 50 100 150 200 600 Unit VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, .375” Lead Length at TA = 75°C 3.0 A IFSM Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine Wave 100 A -50 to +150 C TJ, TSTG Operating Junction and Storage Temperature Range © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 V www.fairchildsemi.com ES3A - ES3J — Fast Rectifiers June 2016 Values are at TA = 25°C unless otherwise noted. Symbol PD Parameter Value Unit 1.66 W Power Dissipation Maximum Land Pattern: 16 x 16 mm 47 125 RJA Thermal Resistance, Junction to Ambient(1) Minimum Land Pattern: 2.6 x 3.2 mm RJL Thermal Resistance, Junction to Lead(1) Maximum Land Pattern: 16 x 16 mm 12 Minimum Land Pattern: 2.6 x 3.2 mm 16 C/W C/W Note: 1. Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Value ES3A ES3B ES3C VF Maximum Forward Voltage IF = 3.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A IR Maximum Reverse Current at Rated VR TA = 25C 10 TA = 100C 500 CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 45 © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 ES3D ES3J 0.95 1.70 Typ. 20 35 Max. 30 45 Unit V ns A pF www.fairchildsemi.com 2 ES3A - ES3J — Fast Rectifiers Thermal Characteristics ES3A - ES3J — Fast Rectifiers 100 3.5 3 Forward Current, IF[A] Average Rectified Forward Current, IF [A] Typical Performance Characteristics 2.5 2 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 1.5 1 0.5 0 0 25 ES3A-ES3D 10 ES3J 1 0.1 o TA=25 C Pulse Width = 300us 2% Duty Cycle 50 75 100 125 Ambient Temperature [ºC] 150 0.01 0.4 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage Drop, VF[V] Figure 1. Forward Current Derating Curve Figure 2. Foward Voltage Characteristics 1000 100 80 70 Reverse Current, IR [ μA] Total Capacitance, C T [pF] 90 60 50 40 30 20 10 0 0.1 0.5 1 5 10 20 50 100 Reverse Voltage, V R [V] 50 NONINDUCTIVE (-) 50 NONINDUCTIVE T A = 25º C 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] +0.5A trr 0 DUT 50V (approx) 1 Figure 4. Reverse Current vs. Reverse Voltage Figure 3. Total Capacitance 50 NONINDUCTIVE T A = 75º C 10 0.1 500 T A = 100 ºC 100 Pulse Generator (Note 2) -0.25A (+) OSCILLOSCOPE (Note 1) -1.0A 1.0cm NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. SET TIME BASE FOR 5/ 10 ns/ cm Figure 5. Reverse Recovery Time Characteristic and Test Circuit Diagram © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 www.fairchildsemi.com 3 8.15 7.75 B 1.96 6.25 5.55 3.27 2.75 B 3.39 6.81 7.15 6.60 A 0.13 M C B A LAND PATTERN RECOMMENDATION TOP VIEW 2.45 1.90 A 2.65 MAX GAGE PLANE C 0.30 0.05 4.70 4.40 0.203 0.050 B 0.13 M C B A NOTES: A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO-214, VARIATION AB B C. D. DOES NOT COMPLY TO JEDEC STD. VALUE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5-2009 LAND PATTERN STANDARD: DIOM7957X241M DRAWING FILENAME: MKT-DO214ABrev2 F. G. 0.41 0.15 SEATING PLANE SIDE VIEW E. 8° 0° R0.15 4X 0.45 1.60 0.75 DETAIL A SCALE 2:1 8° 0° TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com