ESD7561N2T5G

ESD7561 Ultra-Low Capacitance ESD Protection Micro−Packaged Diodes for ESD Protection The ESD7561 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. www.onsemi.com Features • • • • • • • Industry Leading Capacitance Linearity Over Voltage Ultra−Low Capacitance: 0.3 pF Typ Insertion Loss: 0.05 dB at 1 GHz; 0.21 dB at 3 GHz Low Leakage: < 1 nA Protection for the following IEC Standards: ♦ IEC61000−4−2 (ESD): Level 4 ±18 kV Contact ♦ IEC61000−4−4 (EFT): 40 A −5/50 ns ♦ IEC61000−4−5 (Lightning): 1 A (8/20 ms) ISO 10605 (ESD) 330 pF/2 kW ±23 kV Contact These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant X2DFN2 CASE 714AB V M RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications USB 2.0, USB 3.0 VM G = Specific Device Code = Date Code ORDERING INFORMATION Device ESD7561N2T5G Typical Applications • • • • MARKING DIAGRAM Package Shipping† X2DFN2 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit ±18 kV °PD° RqJA 300 400 mW °C/W TJ, Tstg −55 to +150 °C TL 260 °C IEC 61000−4−2 (ESD) (Note 1) Total Power Dissipation (Note 2) @ TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform. 2. Mounted with recommended minimum pad size, DC board FR−4 © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 0 1 Publication Order Number: ESD7561/D ESD7561 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IPP Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IT VC VBR VRWM IR IR V IR VRWM VBR VC IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT IPP Test Current Bi−Directional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Reverse Working Voltage Condition Min Typ VRWM Breakdown Voltage VBR IT = 1 mA (Note 3) Max Unit 16 V 16.5 V Reverse Leakage Current IR VRWM = 5 V