FAN7527BN

DATA SHEET www.onsemi.com Power Factor Correction Controller FAN7527B Description The FAN7527B provides simple and high−performance active Power Factor Correction (PFC). The FAN7527B is optimized for electronic ballasts and low–power, high−density power supplies that require minimum board size, reduced external components, and low power dissipation. Because the R/C filter is included in the current−sense block, an external R/C filter is not necessary. Special circuitry prevents no−load runaway conditions. Regardless of the supply voltage, the output drive clamping circuit limits the overshoot of the power MOSFET gate drive, which improves system reliability. Features • • • • • • • • • • • Internal Startup Timer Internal R/C Filter Eliminates the Need for External R/C Filter Precise Adjustable Output Over−Voltage Protection Zero Current Detector One Quadrant Multiplier Trimmed 1.5% Internal Band Gap Reference Under−Voltage Lockout with 3 V of Hysteresis Totem−Pole Output with High−State Clamp Low Startup and Operating Current 8−Pin SOP or 8−Pin DIP These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Ballast • SMPS © Semiconductor Components Industries, LLC, 2013 February, 2022 − Rev. 2 1 PDIP8 9.42x6.38, 2.54P CASE 646CM SOIC8 CASE 751EB MARKING DIAGRAM $Y&Z&2&K xxxx $Y &Z &2 &K xxxx $Y&Z&2&K xxxx = onsemi Logo = Assembly Plant Code = 2−Digit Date Code = Lot Run Traceability Code = Specific Device Code ORDERING INFORMATION Package Shipping† FAN7527BN PDIP8 (Pb−Free) 3000 / Tube FAN7527BMX SOIC8 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. NOTE: Operating Temperature Range of both devices is −25 to +125°C Publication Order Number: FAN7527B/D FAN7527B BLOCK DIAGRAM Figure 1. Block Diagram www.onsemi.com 2 FAN7527B PIN CONFIGURATION Figure 2. Pin Configuration PIN DEFINITIONS Pin # Name Description 1 INV Inverting input of the error amplifier. The output of the boost converter should be resistively divided to 2.5 V and connected to this pin. 2 EA_OUT Output of the error amplifier. Feedback compensation network is placed between this pin and the INV pin. 3 MULT Input to the multiplier stage. The full−wave rectified AC voltage is divided to less than 2 V and is connected to this pin. 4 CS Input of the PWM comparator. The MOSFET current is sensed by a resistor and the resulting voltage is applied to this pin. An internal R/C filter is included to reject high−frequency noise 5 Idet Zero Current Detection (ZCD) input 6 GND Ground 7 OUT Gate driver output. Push−pull output stage is able to drive the power MOSFET with a peak current of 500 mA 8 VCC Supply voltage of driver and control circuits www.onsemi.com 3 FAN7527B ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Min. Supply Voltage Max. Unit 30 V IOH, IOL Peak Drive Output Current ±500 mA ICLAMP Driver Output Clamping Diodes VO > VCC or VO < −0.3 V ±10 mA IDET Detector Clamping Diodes ±10 mA VIN Error Amplifier Multiplier and Comparator Input Voltages 6.0 V TJ Operation Junction Temperature +150 °C −0.3 TOPR Operating Temperature Range −25 +125 °C TSTG Storage Temperature Range −65 +150 °C SOIC8 0.8 W PDIP8 1.1 W SOIC8 150 °C/W PDIP8 110 °C/W PD ΘJA Power Dissipation Thermal Resistance Junction−Ambient Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TEMPERATURE CHARACTERISTICS (−25°C ≤ TA ≤ 125°C) Symbol Parameter DVREF Temperature Stability Reference Voltage (VREF) DK/DT Temperature Stability for Multiplier Gain (K) Min. www.onsemi.com 4 Typ. Max. Unit 20 mV −0.2 % / °C FAN7527B ELECTRICAL CHARACTERISTICS (VCC = 14 V, −25°C ≤ TA ≤ 125°C, unless otherwise stated.) Symbol Parameter Conditions Min. Typ. Max. Unit 10.5 11.5 12.5 V 2 3 4 V 10 60 100 mA 3 6 mA 1.7 4.0 mA 4 8 mA V UNDER−VOLTAGE LOCKOUT Vth(st) Start Threshold Voltage HY(st) UVLO Hysteresis VCC Increasing SUPPLY CURRENT SECTION IST Startup Supply Current VCC = Vth(st) −0.2 V ICC Operating Supply Current Output Not Switching ICC(OVP) Operating Current at OVP VINV = 3 V Dynamic Operating Supply Current 50 kHz, CI = 1 nF IDCC ERROR AMPLIFIER SECTION VREF Voltage Feedback Input Threshold IREF = 0 mA, TA = 25_C 2.465 2.500 2.535 25°C ≤ TA ≤ 125°C 2.440 2.500 2.560 10.0 ΔVFEF1 Line Regulation 14 V ≤ VCC ≤ 25 V 0.1 ΔVFEF3 Temperature Stability of VREF (Note 1) −25°C ≤ TA ≤ 125°C 20 Ib(ea) Input Bias Current −0.5 mV mV 0.5 mA Output Source Current VM2 = 4 V −2 −4 mA Output Sink Current VM2 = 4 V 2 4 mA VEAO(H) Output Upper Clamp Voltage (Note 1) ISOURCE = 0.1 mA 6 V VEAO(L) Output Lower Clamp Voltage (Note 1) ISINK = 0.1 mA 2.25 V 60 80 dB 60 80 dB 1 MHz 0.6 V/ms ISOURCE ISINK GV Large Signal Open−Loop Gain (Note 1) PSRR Power Supply Rejection Ratio (Note 1) GBW Unity Gain Bandwidth (Note 1) SR 14 V ≤ VCC ≤ 25 V Slew Rate (Note 1) MULTIPLIER SECTION Ib(m) Input Bias Current (Pin 3) ΔVM1 M1 Input Voltage Range (Pin 3) ΔVM2 M2 Input Voltage Range (Pin 2) K −0.5 VREF 0.5 mA 3.8 V VREF+2.5 V Multiplier Gain (Note 1) VM1 = 1 V, VM2 = 3.5 V 0.36 0.44 0.52 1/V VOMAX(m) Maximum Multiplier Output Voltage VINV = 0 V, VM1 = 4 V 1.65 1.80 1.95 V ΔK/ΔT Temperature Stability of K (Note 1) −25°C ≤ TA ≤ 125°C −0.2 % / °C CURRENT SENSE SECTION Input Offset Voltage (Note 1) VM1 = 0 V, VM2 = 2.2 V −10 3 10 mV Ib(CS) Input Bias Current 0 V ≤ VCS ≤ 1.7 V −1.0 −0.1 1.0 mA tD(CS) Current Sense Delay to Output (Note 1) 200 500 ns 1.7 2.0 2.3 V 0.2 0.5 0.8 V VIO(CS) ZERO CURRENT DETECT SECTION VTH(DET) Input Voltage Threshold HY(DET) Detect Hysteresis VDET Increasing VCLAMP(I) Input Low Clamp Voltage IDET = −100 mA 0.45 0.75 1.00 V VCLAMP(H) Input High Clamp Voltage IDET = 3 mA 6.5 7.2 7.9 V www.onsemi.com 5 FAN7527B ELECTRICAL CHARACTERISTICS (continued) (VCC = 14 V, −25°C ≤ TA ≤ 125°C, unless otherwise stated.) Symbol Parameter Conditions Min. Typ. Max. Unit −1.0 −0.1 1.0 mA ±3 mA ZERO CURRENT DETECT SECTION Ib(DET) ICLAMP(D) Input Bias Current 1 V ≤ VDET ≤ 5 V Input High/Low Clamp Diode Current (Note 1) OUTPUT SECTION VOH Output Voltage High IO = −10 mA VOL Output Voltage Low IO = 10 mA 0.8 1.0 V tR Rising Time (Note 1) CL = 1 nF 130 200 ns tF Falling Time (Note 1) CL = 1 nF 50 120 ns VOMAX(O) Maximum Output Voltage VCC = 20 V, IO = 100 mA 14 16 V VOMIN(O) Output Voltage with UVLO Activated VCC = 5 V, IO = 100 mA 1 V 10.5 12 11.0 V RESTART TIMER SECTION tD(RST) Restart Time Delay VM1 = 1 V, VM2 = 3.5 V 150 ms OVER−VOLTAGE PROTECTION SECTION ISOVP Soft OVP Detecting Current 25 30 35 mA IDOVP Dynamic OVP Detecting Current 35 40 45 mA VOVP Static OVP Threshold Voltage 2.10 2.25 2.40 V VINV = 2.7 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. These parameters, although guaranteed, are not 100% tested in production. Multiplier Gain: K+ Pin4_Threshold V M1 ǒV M2 * V REFǓ where VM1 = VPIN3, VM2 = VPIN2 www.onsemi.com 6 FAN7527B TYPICAL PERFORMANCE CHARACTERISTICS Figure 3. Error Amplifier Output Voltage vs. Current Sensing Threshold Figure 4. Multiplier Input Voltage vs. Current Sensing Threshold Figure 5. Supply Current vs. Supply Voltage Figure 6. Reference Voltage vs. Temperature Figure 7. Startup Threshold vs. Temperature Figure 8. UVLO Hysteresis vs. Temperature www.onsemi.com 7 FAN7527B TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 9. Startup Supply Current vs. Temperature Figure 10. Error Amplifier Source Current Figure 11. Error Amplifier Sink Current vs. Temperature Figure 12. Error Amplifier Input Bias Current vs. Temperature Figure 13. Multiplier Gain vs. Temperature Figure 14. IDET Threshold Voltage vs. Temperature www.onsemi.com 8 FAN7527B TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 15. IDET Input Hysteresis vs. Temperature Figure 16. Restart Time vs. Temperature Figure 17. Maximum Multiplier Output Voltage vs. Temperature Figure 18. Supply Current vs. Temperature www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP8 9.42x6.38, 2.54P CASE 646CM ISSUE O DATE 31 JUL 2016 9.83 9.00 5 8 6.670 6.096 1 4 8.255 7.610 TOP VIEW 1.65 1.27 (0.56) 7.62 3.683 3.200 5.08 MAX 3.60 3.00 0.33 MIN 0.560 0.355 2.54 15° 0° 0.356 0.200 7.62 9.957 7.870 FRONT VIEW SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS−001, VARIATION BA B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D. DIMENSIONS AND TOLERANCES PER ASME Y14.5M−2009 DOCUMENT NUMBER: DESCRIPTION: 98AON13468G PDIP8 9.42X6.38, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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