FCB20N60F-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FCB20N60F-F085 N-Channel MOSFET FCB20N60F-F085 N-Channel MOSFET 600V, 20A, 190mΩ Features D D „ Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A „ UIS Capability G „ RoHS Compliant „ Qualified to AEC Q101 Description G S S TM SuperFET is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. Applications „ Automotive On Board Charger „ Automotive DC/DC converter for HEV MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 600 Units V ±30 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 20 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 217.8 A mJ Power Dissipation 405 W Derate above 25oC 2.7 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 150 oC 0.37 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FCB20N60F Device FCB20N60F-F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 10mH, IAS = 6.6A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Semiconductor Components Industries, LLC. September-2017,Rev.3 Publication Order Number: FCB20N60F-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 600V, VGS = 0V 600 - - V - - 10 μA - - 500 μA - - ±100 nA TJ = 25oC TJ = 150oC(Note 4) VGS = ±30V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 20A, VGS= 10V 3.0 4.3 5.0 V - 171 195 mΩ - 444 511 mΩ TJ = 25oC TJ = 150oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 300V ID = 20A - 2305 - pF - 1310 - pF - 105 - pF - 0.95 - Ω - 78 102 nC - 6.6 8.6 nC - 13.8 - nC - 41.5 - nC Switching Characteristics ton Turn-On Time - - 176 ns td(on) Turn-On Delay Time - 43 - ns tr Rise Time - 66 - ns td(off) Turn-Off Delay Time - 211 - ns tf Fall Time - 42 - ns toff Turn-Off Time - - 403 ns VDD = 300V, ID = 20A, VGS = 10V, RG = 25Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 20A, VGS = 0V - - 1.4 V Trr Reverse Recovery Time - 163 - Qrr Reverse Recovery Charge IF = 20A, dISD/dt = 100A/μs, VDD=480V - 1285 - ns nC Notes: 4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 2 FCB20N60F-F085 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 30 1.0 25 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY PACKAGE 20 15 10 5 0 150 Figure 1. Normalized Power Dissipation vs Case Temperature CURRENT LIMITED BY SILICON 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 150 Figure 2. Maximum Continuous Drain Current vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 200 IDM, PEAK CURRENT (A) 100 VGS = 10V TC = 25oC 10 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TC I = I2 125 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FCB20N60F-F085 N-Channel MOSFET Typical Characteristics 100 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.01 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms VDD = 20V 10 TJ = 150oC TJ = -55oC TJ = 25oC 1 2 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 100 1 0.0 0.2 0.4 0.6 ID, DRAIN CURRENT (A) TJ = 25 oC 10 0.8 1.0 1.2 1.4 6V 80μs PULSE WIDTH Tj=25oC 0.1 Figure 7. Forward Diode Characteristics 1000 VGS 15V Top 10V 8V 7V 6.5V 6V 5.5V Bottom 10 80μs PULSE WIDTH Tj=150oC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Saturation Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID, DRAIN CURRENT (A) 10 1 1.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 100 10 VGS 15V Top 10V 8V 7V 6.5V 6V Bottom VGS = 0 V TJ = 150 oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID = 20A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 800 TJ = 150oC 600 400 TJ = 25oC 200 5.5V 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 0 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Rdson vs Gate Voltage www.onsemi.com 4 10 FCB20N60F-F085 N-Channel MOSFET Typical Characteristics 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.8 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.2 2.4 2.0 1.6 1.2 ID = 20A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Figure 11. Normalized Rdson vs Junction Temperature 0.8 0.7 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 10000 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 1mA 1.1 1.0 Ciss 1000 Coss 100 0.9 10 f = 1MHz VGS = 0V 0.8 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 1 0.1 200 Figure 13. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 0.9 Figure 12. Normalized Gate Threshold Voltage vs Temperature 1.2 ID = 20A VDD = 240V 8 VDD = 300V 6 VDD = 360V 4 2 0 20 40 60 Qg, GATE CHARGE(nC) Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 14. Capacitance vs Drain to Source Voltage 10 0 1.0 0.6 -80 200 VGS = VDS ID = 250μA 1.1 80 Figure 15. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FCB20N60F-F085 N-Channel MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com