FCH077N65F-F085

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 54 A, 77 mW FCH077N65F-F085 Description SuperFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SuperFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 77 m @ 10 V 54 A D G Features • • • • • S Typ. RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typ. Qg(tot) = 126 nC at VGS = 10 V, ID = 27 A UIS Capability AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant N-CHANNEL MOSFET S D G Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH077N65F −F085 $Y &Z &3 &K FCH077N65F−F085 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev. 3 1 Publication Order Number: FCH077N65F−F085/D FCH077N65F−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage ±20 V Drain Current − Continuous (VGS = 10) (Note 1) 54 A See Fig. 4 A ID Parameter Pulsed Drain Current EAS Single Pulsed Avalanche Rating (Note 2) 1128 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation 481 W Derate Above 25°C 3.85 W/°C −55 to + 150 °C PD TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25 °C, L = 18.65 mH, IAS = 11 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. 3. ISD ≤ 27 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH077N65F FCH077N65F−F085 TO−247−3 − − 30 Units THERMAL CHARACTERISTICS Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) Value Unit 0.26 °C/W 40 4. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. www.onsemi.com 2 FCH077N65F−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit 650 − − V TJ = 25 °C − − 10 A TJ = 150 °C (Note 5) − − 1 mA VGS = ±20 V − − ±100 nA OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V Drain to Source Leakage Current VDS = 650 V, VGS = 0 V Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 3 − 5 V RDS(on) Drain to Source On Resistance ID = 27 A VGS = 10 V TJ = 25 °C − 68 77 m TJ = 150 °C (Note 5) − 154 184 m − 5385 7162 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(eff.) Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 5629 7486 pF − 194 − pF VDS = 0 V to 520 V, VGS = 0 V − 693 − pF Gate Resistance f = 1 MHz − 0.5 −  Qg(tot) Total Gate Charge − 126 164 nC Qg(th) Threshold Gate Charge VDD = 380 V, ID = 27 A, VGS = 10 V − 9 12 nC Rg Qgs Gate to Source Gate Charge − 28 − nC Qgd Gate to Drain “Miller”Charge − 53 − nC − 64 148 ns − 37 − ns Rise Time − 27 − ns Turn-Off Delay Time − 105 − ns Fall Time − 5.3 − ns Turn−Off Time − 108.3 237 ns SWITCHING CHARACTERISTICS ton td(on) tr td(off) tf toff Turn−On Time Turn-On Delay Time VDD = 380 V, ID = 27 A, VGS = 10 V, RG = 4.7  DRAIN-SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage VGS = 0 V, ISD = 27 A − − 1.2 V trr Reverse Recovery Time − 190 − ns Qrr Reverse Recovery Charge VDD = 520 V, IF = 27 A, diSD/dt = 100 A/s − 1.5 − C VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 3 FCH077N65F−F085 60 1.0 50 ID, Drain Current (A) 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 VGS = 10V 40 30 20 10 0 150 25 50 TC, Case Temperature (°C) Normalized Thermal Impedance, ZJC 75 100 125 150 TC, Case Temperature (°C) Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature 2 DUTY CYCLE − DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t 1/t 2 PEAK T J = PDM x Z JC x RJC + TC SINGLE PULSE 0.01 −5 10 −4 10 −3 10 −2 −1 10 10 t, Rectangular Pulse Duration(s) Figure 3. Normalized Maximum Transient Thermal Impedance 600 T C = 25 o C VGS = 10V FOR TEMPERATURES ABOVE 25 o C D ERATE PEAK IDM, Peak Current (A) Power Dissipation Multiplier TYPICAL CHARACTERISTICS CURRENT AS FOLLOWS: I = I2 125 100 10 −5 10 15 0 − TC SINGLE PULSE −4 10 −3 10 t, Rectangular Pulse Duration(s) Figure 4. Peak Current Capability www.onsemi.com 4 −2 10 −1 10 FCH077N65F−F085 TYPICAL CHARACTERISTICS 150 100 ID, Drain Current (A) ID, Drain Current (A) 1000 10us 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY R DS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25 o C 1 10 100 120 VDS = 20V 90 60 TJ = 150oC o TJ = 25 C 30 TJ = −55oC 100ms 0.1 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 0 1000 345678 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) Figure 6. Transfer Characteristics Figure 5. Forward Bias Safe Operating Area 150 VGS = 0 V 100 ID, Drain Current (A) IS, Reverse Drain Current (A) 200 TJ = 150 oC 10 TJ = 25 o C TJ = −55oC 1 0.1 0.0 0.3 0.6 0.9 1.2 120 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 90 60 30 0 1.5 80 s PULSE WIDTH TJ = 25°C VGS 5V 3 0 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 60 30 0 RDS(on), Drain to Source On−Resistance (m) ID, Drain Current (A) 80 s PULSE WIDTH TJ = 150°C VGS 90 5V 0 3 6 9 12 15 Figure 8. Saturation Characteristics Figure 7. Forward Diode Characteristics 120 12 9 VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V) 150 6 15 VDS, Drain to Source Voltage (V) 300 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX ID = 27A 250 200 TJ = 150o C 150 100 TJ = 25o C 50 0 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) Figure 10. RDSON vs. Gate Voltage Figure 9. Saturation Characteristics www.onsemi.com 5 10 FCH077N65F−F085 3.0 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 ID = 38A VGS = 10V 0.5 0.0 −80 −40 0 40 80 120 160 200 VGS = VDS ID = 250A 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −80 −40 0 40 80 120 160 200 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Figure 12. Normalized Gate Threshold Voltage vs. Temperature Figure 11. Normalized RDSON vs. Junction Temperature 100000 1.15 ID = 10mA 1.10 Capacitance (pF) Normalized Drain to Source Breakdown Voltage 1.2 Normalized Gate Threshold Voltage Normalized Drain to Source On−Resistance TYPICAL CHARACTERISTICS 1.05 1.00 Ciss 10000 1000 Coss 100 10 0.95 0.90 −75 −50 −25 0 25 50 f = 1MHz VGS = 0V 1 0.1 75 100 125 150 Crss 1 10 100 1000 VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) Figure 14. Capacitance vs. Drain to Source Voltage Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 30 VDS = 260V ID = 27A 24 VDS = 325V 8 Eoss, (J) VGS, Gate to Source Voltage (V) 10 VDS = 390V 6 4 18 12 6 2 0 0 20 40 60 80 100 120 0 140 0 130 260 390 520 650 VDS, Drain to Source Voltage (V) Qg, Gate Charge (nC) Figure 16. Eoss vs. Drain to Source Voltage Figure 15. Gate Charge vs. Gate to Source Voltage www.onsemi.com 6 FCH077N65F−F085 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH077N65F−F085 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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