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FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 60 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
PD
Parameter
– Continuous
(Note 1)
60
– Pulsed
(Note 1)
180
60
W
0.4
W/°C
–65 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB7030BL
FDB7030BL
13’’
24mm
800 units
FDP7030BL
FDP7030BL
Tube
n/a
45
2003 Fairchild Semiconductor Corporation
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
October 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
73
mJ
60
A
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 15 V,
ID = 60 A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ± 20 V,
VDS = 0 V
± 100
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
V
mV/°C
22
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
1.9
3
V
mV/°C
–5
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 30 A
VGS = 4.5 V,
ID = 25 A
VGS= 10 V, ID = 30 A, TJ=125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10V,
ID = 30 A
85
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1760
pF
440
pF
185
pF
VGS = 15 mV,
f = 1.0 MHz
1.2
Ω
VDD = 15V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
12
22
ns
6.8
8.5
10.1
9
12
18
30
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
12
22
ns
td(off)
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
19
33
ns
Qg
Total Gate Charge
17
24
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5 V
ID = 30 A,
5.4
nC
6.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
IF = 30 A,
diF/dt = 100 A/µs
(Note 1)
0.92
60
A
1.3
V
30
nS
20
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Electrical Characteristics
FDP7030BL/FDB7030BL
Typical Characteristics
1.8
180
6.0V
ID, DRAIN CURRENT (A)
150
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=10V
4.5V
120
4.0V
90
3.5V
60
30
3.0V
VGS = 3.5V
3.5V
1.6
1.4
4.0V
4.5V
5.0V
1.2
6.0V
10V
1
0.8
0
0
1
2
3
4
0
5
20
Figure 1. On-Region Characteristics.
80
100
0.030
ID = 30A
VGS =10V
ID = 30A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.025
0.020
TA = 125oC
0.015
0.010
o
TA = 25 C
0.005
-50
-25
0
25
50
75
100
125
o
TJ, JUNCTION TEMPERATURE ( C)
150
2
175
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
1000
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
75
ID, DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
60
45
o
TA = 125 C
o
-55 C
30
o
25 C
15
100
TA = 125oC
10
1
25oC
0.1
-55oC
0.01
0.001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7030BL/FDB7030BL Rev D1(W)
2500
VDS = 10V
ID = 30A
f = 1MHz
VGS = 0 V
20V
2000
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
4
1500
1000
Coss
2
500
0
0
Crss
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
30
0
35
10
15
20
25
30
Figure 8. Capacitance Characteristics.
5000
P(pk), PEAK TRANSIENT POWER (W)
1000
10µs
RDS(ON) LIMIT
100µs
100
1mS
10mS
100m
DC
10
VGS = 10V
SINGLE PULSE
RθJC = 2.5oC/W
o
TA = 25 C
1
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJC = 2.5°C/W
TA = 25°C
4000
3000
2000
1000
0
0.00001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
Ciss
0.0001
0.001
0.01
t1, TIME (sec)
0.1
1
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 2.5 °C/W
0.2
0.1
P(pk
0.1
t1
t2
TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Typical Characteristics
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
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GTO™
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I2C™
TM
EnSigna
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
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MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
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TINYOPTO™
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UHC™
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VCX™
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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