FDBS09H04A-F085A

FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Features Description • Short circuit protection with latch N channel power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart Trench chip on chip technology. Provides embedded protective functions. • Current limitation • Overload protection • Thermal shutdown with restart TO263-7L • Overvoltage protection (including load dump) • Loss of ground protection • Loss of supply protection (with external diode for charged inductive load) 1 • Very low standby current 7 • Fast demagnetization of inductive loads TO220-7L • ESD protection • Optimized static electromagnetic compatibility • Diagnostic function - Proportional load current sense (with defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown) • Qualified to AEC Typical Applications • Power switch with current sense diagnostic feedback for DC grounded loads • All types of resistive, inductive, and capacitive loads • Replace electromechanical relays, fuses and discrete circuits Ordering Information Part Number Package Operating Temperature FDBS09H04A_F085A TO263-7L -40 C - 150 C Eco Status RoHS Packing Method Tape & Reel For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 1 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch April 2012 Rbb Charge Pump Voltage Source Current Limit Vbb 4 Gate Protection 1 High-side Driver OUT 2 6 7 SCIS Input / Output IN ESD & OVP 3 Protection 5 UVLO & Control Logic IS Temp. Sense Current Sense Overload Detection Output Voltage Detection Pin Definitions Pin Number Pin Name I/O 1 OUT A Output to loads; Pins 1, 2, 6 and 7 must be externally shorted 2 OUT A Output to loads; Pins 1, 2, 6 and 7 must be externally shorted 3 IN A Input; Activates the power switch if shorted to ground 4 Vbb P Supply Voltage; Pin 4 and tab are internally shorted 5 IS A Sense Output, Diagnostic feedback; Provides at normal operation a sense current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided 6 OUT A Output to loads; Pins 1, 2, 6 and 7 must be externally shorted 7 OUT A Output to loads; Pins 1, 2, 6 and 7 must be externally shorted ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A Pin Function Description 2 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Block Diagram At Tj=25C unless otherwise specified. Parameter Symbol Values Unit Supply voltage Vbb 38 V Supply voltage for full short circuit protection 1) Vbb 30 V VLoadDump 2) 45 V Load dump protection VLoadDump = UA + VS, UA=13.5V RI=2, RL=1, td=400ms, IN=Low or High IL Self-limited A Tj Tstg -40 - 150 -55 - 150 C C Ptot 81 W EAS 388 mJ Load current (short-circuit current) Operating temperature range Storage temperature range Power Dissipation (DC) 3) Inductive load switch-off energy dissipation Single pulse, IL=12.5A, L=5mH, Vbb=12V, Tj=150C Electrostatic discharge capability (ESD) (Human Body Model) IS VESD 2 KV IN VESD 2 KV VBB, Output VESD 5 KV IIN IIS +15, -120 +15, -120 mA dVbIN / dt self-limited 20 V/us Current through input pin (DC) Current through current sense pin (DC) Input voltage slew rate Vbb 16V 4) Notes: 1) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. 2) VLoad dump is setup without the DUT connected to the generator. 3) See also diagram on page 11. 4) See also on page 7. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 3 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Absolute Maximum Ratings At Tj=25C, Vbb=12V unless otherwise specified. Parameter Symbol Conditions RthJC 5) RthJA (junction to case) (junction to ambient) device on PCB 6), SMD version only Min. Typ. Max. Unit Thermal Characteristics Thermal resistance - 0.6 70 35 0.8 45 K/W Load Switching Capability and Characteristics On-state resistance (pin 3 to pins 1, 2, 6, 7) RON VIN=0, Vbb=5.5V, IL=10A, Tj=25C VIN=0, Vbb=5.5V, IL=10A, Tj=150C VIN=0, Vbb=12V, IL=10A, Tj=25C VIN=0, Vbb=12V, IL=10A, Tj=150C - 5.5 10 5.5 10 9 15 9 15 m VON(NL) Tj=-40 - 150C - 35 65 mV IL(ISO) ISO Proposal7): VON 1V, typ Tj = -40 - 150C 3.5 5.2 7.5 mA KILIS IIN=0(e.g. during deenergizing of induc- tive loads) Sense current under fault conditions17) Sense saturation current Fault-sense signal delay after input current positive slope Current sense leakage current IIS,lim VON < 1V, typ Tj = -40 - 150C 3.5 5.8 8.5 mA tdelay(fault) VON > 1V, typ Tj = -40 - 150C 350 500 650 us IIS(LL) IIN = 0 - 0 0.5 uA Current sense offset current IIS(LH) VIN = 0, IL 20A, Tj = -40 - 150C - 300 650 us Current sense settling timeduring on condition 18) tslc(IS) IL =10 --> 20A ,Tj=-40 ~ 150C - 50 100 us Overvoltage protection VZ,IS Ibb = 15mA, Tj = -40 - 150C 42.5 47.3 - V Required current capability of input switch IIN(on) Tj = -40 - 150C - 1.5 3.0 mA Input current for turn-off IIN(off) Tj = -40 - 150C - - 15 uA Input Notes: 16) See also Figures 4.x and 6.x on page 15 and 16. 17) Fault conditions are overload during on (i.e. VON>1V typ.), over temperature and short circuit; see also truth table on page 7. 18) Not subject to production test, specified by design. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 6 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Electrical Characteristics FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Application Information 1. Truth Table Sense current under fault conditions Output Level Current Sense Normal operation Input Current Level L H L H  0 (IIS(LL)) nominal Overload 19) L H L H  0 (IIS(LL)) IIS,fault Short circuit to GND 20) L H L L  0 (IIS(LL)) IIS,fault Over temperature L H L L  0 (IIS(LL)) IIS,fault Short circuit to Vbb L H H H  0 (IIS(LL)) < nominal 21) Open load L H Z H  0 (IIS(LL))  0 (IIS(LH)) L = “ Low “ Level, Z = High impedance, potential depends on external circuit, H = “HIGH” Level 2.Terms Ibb VON VbIN 4 VbIS V bb Vbb 3 IN OUT IL 1,2,6,7 IS R IN IIN IIS VOUT VIN 5 VIS R IS Notes: 19) Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.). See also page 10. 20) Short Circuit is detected at the following condition: VON > 3.5V (typ.). See also page 11. 21) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 7 www.fairchildsemi.com 3.1 Input circuit (ESD protection) Vbb VZ,IN VbIN ZD Rbb VIN IIN ESD zener diode: 47.3V typ., max 15mA 3.2 Current sense output Vbb Rbb VZ,IS IIS,fault IS IIS VIS RIS VZ,IS = 47.3V ( typ.), RIS = 1K nominal (or 1K /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as VOUT - VIS > 5V. Therefore RIS should be less than Vbb – 5V------------------------8.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also over voltage protection. If you don't use the current sense output in your application, you can leave it open. 3.3 Inductive and over voltage output clamp Vbb VZ1 VON OUT VON is clamped to VON(CL) = 41.5V typical ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 8 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch 3. Detailed Function Blocks Vbb VZ,IN VZ,IS Rbb RIN Logic IN OUT IS RV RIS VZ,VIS Rbb = 85 typ., VZ,IN = VZ,IS = 47.3V typ., RIS = 1K nominal. Note that when over voltage exceeds 47.3V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. 3.5 Reverse battery protection Vbb Rbb RIN IN Logic OUT IS RL RIS RIS typ. 1K Add RIN for reverse battery protection in application with Vbb above 16V; 1 - ------1 0.082A -------+ -  --------------------------R IN R is V bb – 9V To minimize power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 82mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by properly adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 9 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch 3.4 Overvoltage protection of logic part Vbb + OUT Vbb - IN -IL IS VOUT IIS + = VIS VIN - RIS The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! 3.7 Vbb disconnect with energized inductive load Vbb IN OUT VD Vbb IS VZL Provide a current path with load current capability by using a diode, a Z-diode, or a varistor(VZL+ VD < 38V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. 3.8 Overload detection Vbb VON Detection Logic OUT Fault Condition: VON > 1V typ. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 10 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch 3.6 Inverse load current operation FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch 3.9 Short circuit Vbb 5uH IN OUT 10mohm LSC IS Vbb = IIN -iL(t) RSC SC RIS ZL Fault Condition: VON > VON(SC) (3.5V typ.) and t > td(SC) (typ. 650us) Short circuit is a combination of primary and secondary impedances and resistances. 3.10 Inductive load switch-off energy dissipation Ebb EAS ELoad Vbb Vbb IN = -iL(t) OUT EL IS L {R ZL RIS IIN L ER Energy stored in load inductance: EL = 1  2  L  IL 2 While demagnetizing load inductance, the energy dissipated in MOSFET is E AS = E bb + E L – E R =  VON  CL   iL  t dt with an approximate solution for RL > 0 Vout(CL) = VoN(CL) - Vbb: IL  L IL  RL E AS = ---------------  V ON  CL   ln  1 + -----------------------------  2  RL V OUT  CL   ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 11 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch 3.11 Maximum allowable load inductance for a single switch off L=f(IL); Tj = 150C, Vbb=12V, RL = 0 1000 L[mH] 100 10 1 0.1 0.01 ©2011 Fairchild Semiconductor Corporation 1 FDBS09H04A_F085A/FDPS09H04A_F085A 10 12 I_L[A] 100 www.fairchildsemi.com VBB Control IN Rin IS Diagnosis OUT Ris M Vbb Rbb *1 RIN 1K On Off Output *3 R1 4 IN Bat OUT 3 100 C 1,2,6,7 IS 5 R2 R3 MCU *2 R4 3K Load ADC *1 5.1V RIS 1K 1) Ris and Rin is recommended as 1k 2) Put diode or capacitor between load to protect device or to remove noise. 3) For reverse battery protection function, R1 should be used less than 120at -18V. ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 13 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Typical Application Circuit IIN IIN VOUT VOUT 90% ton dV/dtoff dV/dton toff 10% IL IL Load1 Tslc(IS) Load2 IIs IIs t Tson(IS) t Tsoff(IS) Figure 2a. Switching motors and lamps As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim Figure 1a. Switching a resistive load, change of load current in ON-condition The sense signal is not valid during a settling time after turn-on/off and after change of load current IIN IL(SC) [A] 120 100 VOUT 80 VON(CL) 60 40 IL 20 VON IIs 0 t Figure 2b. Switching an inductive load ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 10 20 30 [V] Figure 3a. Typical current limitation characteristic In case of VON > VON(SC)(typ.3.5V) the device will be switched off by internal short circuit detection 14 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Timing Diagrams IL IL VON > VON(SC) Td(SC2) td(SC1) VON tm IIs 1V typ IIS,fault tdelay(fault) tdealy(fault) t IIs Figure 3b. Short circuit type one: shut down by short circuit detection, reset by IIN=0 IIS,fault IL/KiLiS t Shut down remains latched until next reset via input Figure 3c. Short circuit type two: shut down by short circuit detection, reset by IIN=0 IIN IIN IIS VOUT IIS,fault IL Vbb-VOUT Auto Restart VON=1V typ. RON*IL,lim Is Tj t t IL/kilis Figure 4a. Over temperature Reset if Tj < Tjt ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A IIS,lim IIS,fault Figure 4b. Overload Reset if Tj < Tjt 15 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch IIN IIN IIS 4 IIS,Lim VIN = 0 3 VON(CL) Dynamic,short Undervoltage not below 2 IL,Lim VbIN(u) 1 IL(min) IIN = 0 IIS(LH) Vbb 0 VbIN(u) Vbb(ucp) VON(CL) 0 Figure 5. Under voltage restart of charge pump and over voltage clamp 10 IL 20 30 40 50 [A] Figure 6a. Current sense versus load current [V] 0.1 VON kLILIS 30000 0.05 20000 10000 IL 0 5 10 15 20 25 30 IL [A] 2 FDBS09H04A_F085A/FDPS09H04A_F085A 6 8 10 12 14 [A] Figure 7. Output voltage drop versus load current Figure 6b. Current sense ratio ©2011 Fairchild Semiconductor Corporation 4 16 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch [mA] VOUT FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Package Dimensions ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 17 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 18 www.fairchildsemi.com FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch ©2011 Fairchild Semiconductor Corporation FDBS09H04A_F085A/FDPS09H04A_F085A 19 www.fairchildsemi.com