FDC6331L

FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package. • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) • High performance trench technology for extremely low RDS(ON) Applications • Load switch • Power management D2 Equivalent Circuit Q2 S1 Vin,R1 4 3 Vout,C1 ON/OFF 5 2 Vout,C1 R1,C1 6 1 R2 D1 IN SuperSOT Pin 1 -6 OUT Q1 G2 TM + V – DROP S2 G1 ON/OFF See Application Circuit SuperSOT™-6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol V IN Parameter Maximum Input Voltage V ON/OFF High level ON/OFF voltage range ILoad Load Current – Continuous (Note 1) – Pulsed Ratings ±8 Units V –0.5 to 8 V –2.8 A –9 PD Maximum Power Dissipation TJ , TSTG Operating and Storage Junction Temperature Range (Note 1) 0.7 W –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 180 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .331 FDC6331L 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6331L Rev C(W) FDC6331L August 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BV IN Vin Breakdown Voltage V ON/OFF = 0 V, ID = –250 µA ILoad Zero Gate Voltage Drain Current V IN = 6.4 V, –1 µA IFL Leakage Current, Forward V ON/OFF = 0 V, V IN = 8 V –100 nA IRL Leakage Current, Reverse V ON/OFF = 0 V, V IN = –8 V 100 nA 1.5 55 70 100 4 5 V On Characteristics 8 V V ON/OFF = 0 V (Note 2) V ON/OFF (th) RDS(on) Gate Threshold Voltage Static Drain–Source On–Resistance (Q2) RDS(on) Static Drain–Source On–Resistance (Q1) V IN = V ON/OFF, ID = –250 µA V IN = 4.5 V, ID = –2.8A V IN = 2.5 V, ID = –2.5 A V IN = 1.8 V, ID = –2.0 A V IN = 4.5 V, ID = 0.4A V IN = 2.7 V, ID = 0.2 A 0.4 0.9 34 45 64 3.1 3.8 mΩ Ω Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V ON/OFF = 0 V, IS = –0.6 A (Note 2) –0.6 A –1.2 V Notes: 1. R θJ A is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guar anteed by design while R θJ A is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC6331L Load Switch Application Circuit IN Q2 OUT C1 R1 Q1 LOAD ON/OFF R2 External Component Recommendation: For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030. FDC6331L Rev C(W) FDC6331L Electrical Characteristics 0.4 V IN = -1.8V V ON/OFF = -1.5V -8V PW = 300us, D < 2% 0.3 V IN = -2.5V V ON/OFF = -1.5V -8V PW = 300us, D < 2% 0.35 T J = 125OC 0.3 0.25 -V DROP, (V) -V DROP, (V) FDC6331L 0.4 0.35 TJ = 25 OC 0.2 0.15 0.2 T J = 25OC 0.15 0.1 0.1 0.05 0.05 0 TJ = 125 OC 0.25 0 0 1 2 3 4 5 6 0 1 2 3 -I L, (A) 4 5 6 -I L, (A) Figure 1. Conduction Voltage Drop Variation with Load Current. Figure 2. Conduction Voltage Drop Variation with Load Current. 0.4 0.15 RDS(ON) , ON-RESISTANCE ( ) V IN = -4.5V V ON/OFF = -1.5V -8V PW = 300us, D < 2% 0.35 -V DROP, (V) 0.3 0.25 TJ = 125 OC 0.2 0.15 TJ = 25OC 0.1 0.05 IL = -1A V O N / O F F = -1.5V -8V PW = 300us, D < 2% 0.125 0.1 0.075 T J = 125OC 0.05 TJ = 25OC 0.025 0 0 1 2 3 4 5 6 0 -I L, (A) 1 Figure 3. Conduction Voltage Drop Variation with Load Current. 2 3 4 -VIN , INPUT VOLTAGE (V) 5 Figure 4. On-Resistance Variation With Input Voltage r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA(t) = r(t) + RθJA R θJA = 156 °C/W 0.2 P(pk) 0.1 0.1 t1 t2 T J - TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 FDC6331L Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4